An electron beam application apparatus includes: an optical system configured to irradiate a sample with excitation light; an electron optical system configured to project, onto a camera, a photoelectron image formed by photoelectrons emitted from the sample irradiated with the excitation light; and a control unit. The optical system includes a light source configured to generate the excitation light and a pattern forming unit. The excitation light forms an optical pattern on a surface of the sample when the pattern forming unit is turned on, and the excitation light is emitted to the sample without forming the optical pattern on the surface of the sample when the pattern forming unit is turned off. The control unit adjusts the electron optical system based on feature data of a bright and dark pattern formed by the optical pattern in the photoelectron image obtained by turning on the pattern forming unit.

A detector may be provided with an array of sensing elements. The detector may include a semiconductor substrate including the array, and a circuit configured to count a number of charged particles incident on the detector. The circuit of the detector may be configured to process outputs from the plurality of sensing elements and increment a counter in response to a charged particle arrival event on a sensing element of the array. Various counting modes may be used. Counting may be based on energy ranges. Numbers of charged particles may be counted at a certain energy range and an overflow flag may be set when overflow is encountered in a sensing element. The circuit may be configured to determine a time stamp of respective charged particle arrival events occurring at each sensing element. Size of the sensing element may be determined based on criteria for enabling charged particle counting.

A detector may be provided with an array of sensing elements. The detector may include a semiconductor substrate including the array, and a circuit configured to count a number of charged particles incident on the detector. The circuit of the detector may be configured to process outputs from the plurality of sensing elements and increment a counter in response to a charged particle arrival event on a sensing element of the array. Various counting modes may be used. Counting may be based on energy ranges. Numbers of charged particles may be counted at a certain energy range and an overflow flag may be set when overflow is encountered in a sensing element. The circuit may be configured to determine a time stamp of respective charged particle arrival events occurring at each sensing element. Size of the sensing element may be determined based on criteria for enabling charged particle counting.

Provided is a projection electron beam application apparatus suitable for use in semiconductor manufacturing lines. An electron optical system of the electron beam application apparatus includes a mirror aberration corrector 106 disposed perpendicular to an optical axis 109, a plurality of magnetic field sectors 104 by which an orbit of electrons is deviated from the optical axis to make the electrons incident on the mirror aberration corrector 106, and the orbit of the electrons emitted from the mirror aberration corrector 106 is returned to the optical axis, and a doublet lens 105 disposed between adjacent magnetic field sectors along the orbit of the electrons. The plurality of magnetic field sectors have the same deflection angle for deflecting the orbit of the electrons, and the doublet lens is disposed such that an object plane and an image plane thereof are respectively central planes of the adjacent magnetic field sectors along the orbit of the electrons.

In an atom probe having a vacuum chamber containing a specimen mount and a detector for receiving ions emitted from the specimen, a high vacuum subchamber is provided about the specimen mount, with an aperture in the subchamber allowing passage of emitted ions to the detector. The high vacuum subchamber may be pumped to higher vacuum (lower pressure) than the vacuum chamber, and so long as the pressure in the vacuum chamber is below about 10.sup.−1 Pa, very little gas diffusion takes place through the aperture, allowing higher vacuum to be maintained in the subchamber despite the aperture opening to the chamber. The higher vacuum in the subchamber about the specimen assists in reducing noise in atom probe image data. The aperture may conveniently be provided by the aperture in a counter electrode, such as a local electrode, as commonly used in atom probes.

In an atom probe having a vacuum chamber containing a specimen mount and a detector for receiving ions emitted from the specimen, a high vacuum subchamber is provided about the specimen mount, with an aperture in the subchamber allowing passage of emitted ions to the detector. The high vacuum subchamber may be pumped to higher vacuum (lower pressure) than the vacuum chamber, and so long as the pressure in the vacuum chamber is below about 10.sup.−1 Pa, very little gas diffusion takes place through the aperture, allowing higher vacuum to be maintained in the subchamber despite the aperture opening to the chamber. The higher vacuum in the subchamber about the specimen assists in reducing noise in atom probe image data. The aperture may conveniently be provided by the aperture in a counter electrode, such as a local electrode, as commonly used in atom probes.

Apparatuses for collection of upstream and downstream transmission electron microscopy (TEM) cathodoluminescence (CL) emitted from a sample exposed to an electron beam are described. A first fiber optic cable carries first CL light emitted from a first TEM sample surface, into a spectrograph. A second fiber optic cable carries second CL light emitted from a second TEM sample surface into the spectrograph. The first and second fiber optic cables are positioned such that the spectrograph produces a first light spectrum for the first fiber optic cable and a separate light spectrum for the second fiber optic cable. The described embodiments allow collection of TEM CL data in a manner that allows analyzing upstream and downstream TEM CL signals separately and simultaneously with an imaging spectrograph.

Apparatuses for collection of upstream and downstream transmission electron microscopy (TEM) cathodoluminescence (CL) emitted from a sample exposed to an electron beam are described. A first fiber optic cable carries first CL light emitted from a first TEM sample surface, into a spectrograph. A second fiber optic cable carries second CL light emitted from a second TEM sample surface into the spectrograph. The first and second fiber optic cables are positioned such that the spectrograph produces a first light spectrum for the first fiber optic cable and a separate light spectrum for the second fiber optic cable. The described embodiments allow collection of TEM CL data in a manner that allows analyzing upstream and downstream TEM CL signals separately and simultaneously with an imaging spectrograph.

Provided are an inspection device that detects with high precision and classifies surface unevenness, step batching, penetrating blade-shaped dislocations, penetrating spiral dislocations, basal plane dislocations, and stacking defects formed in an SiC substrate and an epitaxial layer; and a system. In the inspection device using charged particle beams, a device is used that has an electrode provided between a sample and an objective lens, the device applies a positive or negative voltage to the electrode and obtains images. A secondary electron emission rate is measured and energy EL and EH for the charged particles are found. A first image is obtained using the EH and positive potential conditions. A second image is obtained using the EL and negative potential conditions. A third image is obtained at the same position as the second image, and by using the EL and positive potential conditions.

Provided are an inspection device that detects with high precision and classifies surface unevenness, step batching, penetrating blade-shaped dislocations, penetrating spiral dislocations, basal plane dislocations, and stacking defects formed in an SiC substrate and an epitaxial layer; and a system. In the inspection device using charged particle beams, a device is used that has an electrode provided between a sample and an objective lens, the device applies a positive or negative voltage to the electrode and obtains images. A secondary electron emission rate is measured and energy EL and EH for the charged particles are found. A first image is obtained using the EH and positive potential conditions. A second image is obtained using the EL and negative potential conditions. A third image is obtained at the same position as the second image, and by using the EL and positive potential conditions.