Systems and methods for automated alignment of cathodoluminescence (CL) optics in an electron microscope relative to a sample under inspection are described. Accurate placement of the sample and the electron beam landing position on the sample with respect to the focal point of a collection mirror that reflects CL light emitted by the sample is critical to optimizing the amount of light collected and to preserving information about the angle at which light is emitted from the sample. Systems and methods are described for alignment of the CL mirror in the XY plane, which is orthogonal to the axis of the electron beam, and for alignment of the sample with respect to the focal point of the CL mirror along the Z axis, which is coincident with the electron beam.

A device may include an electron source, a detector, and a deflector. The electron source may be directed toward a sample area. The detector may receive an electron signal or an electron-induced signal. A deflector may be positioned between the electron source and the sample. The deflector may modulate an intensity of the electron source directed to the sample area according to an electron dose waveform having a continuously variable temporal profile.

A device may include an electron source, a detector, and a deflector. The electron source may be directed toward a sample area. The detector may receive an electron signal or an electron-induced signal. A deflector may be positioned between the electron source and the sample. The deflector may modulate an intensity of the electron source directed to the sample area according to an electron dose waveform having a continuously variable temporal profile.

A device may include an electron source, a detector, and a deflector. The electron source may be directed toward a sample area. The detector may receive an electron signal or an electron-induced signal. A deflector may be positioned between the electron source and the sample. The deflector may modulate an intensity of the electron source directed to the sample area according to an electron dose waveform having a continuously variable temporal profile.

Provided is a quantification method for evaluating the quality of a sample on the basis of a mirror electron image acquired by a mirror electron microscope. In this invention, a mirror electron image is expressed numerically through counting of the brightness values of each pixel composing the mirror electron image, the creation of a brightness histogram, and the calculation, from the distribution of the brightness histogram, of a standard deviation. If brightness contrast is formed on the mirror electron image by, for example, a scratch on or latent damage in a sample, because the brightness values of the pixels will fluctuate, there will be more variation in the brightness values than in an image obtained from a satisfactory sample with no defects, and this will result in the brightness values of the mirror electron image having a larger standard deviation. The standard deviation indicates the variation in the brightness calculated from the mirror electron image and essentially represents the degree of defect contrast in the sample. This value can be used as a basis for simply evaluating the quality of a sample while eliminating subjectivity and ambiguity.

A particle beam system includes a particle source to produce a first beam of charged particles. The particle beam system also includes a multiple beam producer to produce a plurality of partial beams from a first incident beam of charged particles. The partial beams are spaced apart spatially in a direction perpendicular to a propagation direction of the partial beams. The plurality of partial beams includes at least a first partial beam and a second partial beam. The particle beam system further includes an objective to focus incident partial beams in a first plane so that a first region, on which the first partial beam is incident in the first plane, is separated from a second region, on which a second partial beam is incident. The particle beam system also a detector system including a plurality of detection regions and a projective system.

Provided is a mirror electronic inspection device which is a defect inspection device for detecting a defect of a semiconductor substrate or the like, and evaluates temperature dependence of the defect in a vacuum. A heating stage including a heater (heat generating element) covered with an electrically insulated insulating material, a heater base on which a sample is mounted, and a heat shielding plate and equipotential surface is mounted on a moving stage installed in a sample chamber of a device via an electrically insulated and thermally insulated fixing member. A heater power supply is connected to the heater (heat generating element), and a sample application power supply is connected to the heater base. The heater power supply and the sample application power supply are electrically separated.

Provided is a mirror electronic inspection device which is a defect inspection device for detecting a defect of a semiconductor substrate or the like, and evaluates temperature dependence of the defect in a vacuum. A heating stage including a heater (heat generating element) covered with an electrically insulated insulating material, a heater base on which a sample is mounted, and a heat shielding plate and equipotential surface is mounted on a moving stage installed in a sample chamber of a device via an electrically insulated and thermally insulated fixing member. A heater power supply is connected to the heater (heat generating element), and a sample application power supply is connected to the heater base. The heater power supply and the sample application power supply are electrically separated.

A secondary projection imaging system in a multi-beam apparatus is proposed, which makes the secondary electron detection with high collection efficiency and low cross-talk. The system employs one zoom lens, one projection lens and one anti-scanning deflection unit. The zoom lens and the projection lens respectively perform the zoom function and the anti-rotating function to remain the total imaging magnification and the total image rotation with respect to the landing energies and/or the currents of the plural primary beamlets. The anti-scanning deflection unit performs the anti-scanning function to eliminate the dynamic image displacement due to the deflection scanning of the plural primary beamlets.

A particle beam system includes a particle source to produce a first beam of charged particles. The particle beam system also includes a multiple beam producer to produce a plurality of partial beams from a first incident beam of charged particles. The partial beams are spaced apart spatially in a direction perpendicular to a propagation direction of the partial beams. The plurality of partial beams includes at least a first partial beam and a second partial beam. The particle beam system further includes an objective to focus incident partial beams in a first plane so that a first region, on which the first partial beam is incident in the first plane, is separated from a second region, on which a second partial beam is incident. The particle beam system also a detector system including a plurality of detection regions and a projective system.