In order to optimize defect contrast in a charged particle beam device that inverts charged particles directly above a sample and observes the electrons, this charged particle beam device is provided with a charged particle source, an electron gun control device which applies a first voltage to the charged particle source, a substrate voltage control device which applies a second voltage to a sample, an image forming optical system which includes an imaging lens for imaging charged particles incident from the direction of the sample, a detector which includes a camera for detecting the charged particles, and an image processing device which processes the detected signal, wherein the imaging optical system is configured so as not to image secondary electrons emitted from the sample, but forms an image with mirror electrons bounced back by the electric field formed on the sample by means of the potential difference between the first and the second voltages. The image processing device generates a control signal for controlling the potential difference on the basis of the acquired signal, and optimizes defect contrast by controlling the reflection surface of the mirror electrons.

A method for crystal analysis includes identifying a crystalline region on a device where an electronic channeling pattern is needed to be determined, acquiring a whole image for each of a plurality of different positions for the crystalline region using a scanning electron microscope (SEM) as the crystalline region is moved to different positions. Relevant regions are extracted from the whole images. The images of the relevant regions are stitched together to form a composite map of a full electron channeling pattern representative of the crystalline region wherein the electronic channeling pattern is provided due to an increase in effective angular range between a SEM beam and a surface of the crystal region.

Systems and methods for automated alignment of cathodoluminescence (CL) optics in an electron microscope relative to a sample under inspection are described. Accurate placement of the sample and the electron beam landing position on the sample with respect to the focal point of a collection mirror that reflects CL light emitted by the sample is critical to optimizing the amount of light collected and to preserving information about the angle at which light is emitted from the sample. Systems and methods are described for alignment of the CL mirror in the XY plane, which is orthogonal to the axis of the electron beam, and for alignment of the sample with respect to the focal point of the CL mirror along the Z axis, which is coincident with the electron beam.

Systems and methods for automated alignment of cathodoluminescence (CL) optics in an electron microscope relative to a sample under inspection are described. Accurate placement of the sample and the electron beam landing position on the sample with respect to the focal point of a collection mirror that reflects CL light emitted by the sample is critical to optimizing the amount of light collected and to preserving information about the angle at which light is emitted from the sample. Systems and methods are described for alignment of the CL mirror in the XY plane, which is orthogonal to the axis of the electron beam, and for alignment of the sample with respect to the focal point of the CL mirror along the Z axis, which is coincident with the electron beam.

A device may include an electron source, a detector, and a deflector. The electron source may be directed toward a sample area. The detector may receive an electron signal or an electron-induced signal. A deflector may be positioned between the electron source and the sample. The deflector may modulate an intensity of the electron source directed to the sample area according to an electron dose waveform having a continuously variable temporal profile.

Provided is a mirror device including a mirror which is supported to be flappable around a fast axis and supported to be flappable around a slow axis and in which a resonance frequency of flapping thereof with respect to the fast axis is a first value and a resonance frequency of the flapping thereof with respect to the slow axis is a second value lower than the first value; a signal extracting portion configured to obtain from a slow axis coil a synthesized signal including an induced signal generated in the slow axis coil due to an operation of flapping the mirror around the fast axis and configured to extract the induced signal from the synthesized signal; and a signal generating portion configured to generates a driving signal so that the flapping of the mirror with respect to the fast axis is in a resonance state according to the induced signal.

Provided is a mirror device including a mirror which is supported to be flappable around a fast axis and supported to be flappable around a slow axis and in which a resonance frequency of flapping thereof with respect to the fast axis is a first value and a resonance frequency of the flapping thereof with respect to the slow axis is a second value lower than the first value; a signal extracting portion configured to obtain from a slow axis coil a synthesized signal including an induced signal generated in the slow axis coil due to an operation of flapping the mirror around the fast axis and configured to extract the induced signal from the synthesized signal; and a signal generating portion configured to generates a driving signal so that the flapping of the mirror with respect to the fast axis is in a resonance state according to the induced signal.

A purpose of the present invention is to provide a charged particle beam apparatus that performs apparatus adjustment based on a proper evaluation of a beam. To achieve the abovementioned purpose, with the present invention, proposed is a charged particle beam apparatus comprising: an irradiation optical system including a lens for converging charged particle beams emitted from a charged particle source; and an imaging optical system for imaging the charged particles obtained by irradiating the charged particle beams toward a sample on an imaging element, wherein the charged particle beam apparatus comprises a control apparatus for controlling the lens, and the control apparatus evaluates for each lens condition the size of a specific brightness area obtained by the charged particle beam being made to reach the sample, and selects the lens condition for which the size information fulfills a designated condition.

A scanning electron microscope is provided that is capable of displaying an image highly visible for a user when an image is displayed by visualization by combining morphological image information with component image information. A scanning electron microscope 1 for observing a sample S by irradiating the sample S with an electron ray, the scanning electron microscope 1 includes: a morphological calculation unit 24 configured to calculate intensity data of at least one of secondary electrons and reflected electrons obtained from the sample S to obtain morphological image information of the sample S; a component calculation unit 34 configured to calculate spectrum data of X-ray energy obtained from the sample S to obtain component image information of the sample S; and a display unit 50 configured to display an image visualized by combining the morphological image information with the component image information, wherein the morphological calculation unit 24 is configured to change the morphological image information in accordance with one or more morphological image parameters input by a user, and the component calculation unit 34 is configured to change the component image information in accordance with one or more component image parameters input by a user.

Improved aberration correction in multipass electron microscopy is provided by having Fourier images of the sample (instead of real images) at the reflection planes of the resonator. The resulting 1 magnification of the sample reimaging can be compensated by appropriate sample placement or by adding compensating elements to the resonator. This enables simultaneous correction of lowest order chromatic and spherical aberration from the electron objective lenses. If real images of the sample are at the reflection planes of the resonator instead, only the lowest order chromatic aberration can be corrected.