H01J37/295

LOW ENERGY ELECTRON MICROSCOPY

The disclosure relates to a low energy electron microscopy. The electron microscopy includes a vacuum chamber; an electron gun used to emit electron beam; a diffraction chamber; an imaging device; a sample holder used to fix two-dimensional nanomaterial sample; a vacuum pumping device; and a control computer. The electron beam transmits the sample to form a transmission electron beam and diffraction electron beam. The control computer includes a switching module to switch the work mode between a large beam spot diffraction imaging mode and small beam spot diffraction imaging mode.

LOW ENERGY ELECTRON MICROSCOPY

The disclosure relates to a low energy electron microscopy. The electron microscopy includes a vacuum chamber; an electron gun used to emit electron beam; a diffraction chamber; an imaging device; a sample holder used to fix two-dimensional nanomaterial sample; a vacuum pumping device; and a control computer. The electron beam transmits the sample to form a transmission electron beam and diffraction electron beam. The control computer includes a switching module to switch the work mode between a large beam spot diffraction imaging mode and small beam spot diffraction imaging mode.

Transmission electron microscope and adjustment method of objective aperture
11495431 · 2022-11-08 · ·

A transmission electron microscope includes a control unit for: acquiring an image of an objective aperture; obtaining a position of the objective aperture; obtaining an amount of deviation between an object position and the position of the objective aperture, based on the position of the objective aperture; and operating an aperture moving mechanism, based on the amount of deviation of the position of the objective aperture. The position of the objective aperture is obtained by: binarizing the image of the objective aperture by using a set threshold; obtaining an area of an aperture hole of the objective aperture from the binarized image; determining whether the area is within a predetermined range; changing the threshold when a determination is made that the area is outside the predetermined range; and obtaining a position of the objective aperture when a determination is made that the area is within the predetermined range.

Three-Dimensional Image Reconstruction Method, Image Processor, and Electron Microscope
20170278669 · 2017-09-28 ·

A three-dimensional image reconstruction method associated with the present invention comprises the steps of: obtaining a first transmission electron microscope image of a sample containing the membrane proteins present within a lipid membrane, the image having been taken by illuminating an electron beam on the sample from a direction tilted relative to a line normal to the membrane surface of the lipid membrane (step S10); obtaining a second transmission electron microscope image of the sample taken by illuminating the electron beam on the sample perpendicularly to the membrane surface of the lipid membrane (step S12); identifying orientations of the membrane proteins of the first transmission electron microscope image on a basis of the second transmission electron microscope image (step S14); and analyzing a three-dimensional structure of the membrane proteins from the first transmission electron microscope image on a basis of information about the identified orientations of the membrane proteins (step S18).

HIGH VOLTAGE FEEDTHROUGH ASSEMBLY, TIME-RESOLVED TRANSMISSION ELECTRON MICROSCOPE AND METHOD OF ELECTRODE MANIPULATION IN A VACUUM ENVIRONMENT
20170229276 · 2017-08-10 ·

A high voltage feedthrough assembly (100) for providing an electric potential in a vacuum environment comprises a flange connector (10) being adapted for a connection with a vacuum vessel (201), wherein the flange connector (10) has an inner side (11) facing to the vacuum vessel (201) and an outer side (12) facing to an environment of the vacuum vessel 201, a vacuumtight insulator tube (20) having a longitudinal extension with a first end (21) facing to the flange connector (10) and a second end (22) being adapted for projecting into the vacuum vessel (201), and an electrode device (30) coupled to the second end (22) of the insulator tube (20), wherein the electrode device (30) has a front electrode (31), including a photocathode or a field emitter tip and facing to the vacuum vessel (201) and a cable adapter (32) for receiving a high-voltage cable (214), wherein a flexible tube connector (40) is provided for a vacuum-tight coupling of the insulator tube (20) with the flange connector (10), and a manipulator device (50) is connected with the insulator tube (20) for adjusting a geometrical arrangement of the insulator tube (20) relative to the flange connector (10). Furthermore, an electron diffraction or imaging apparatus (transmission electron microscope, TEM) 200 for static and/or time-resolved diffraction, including (nano-) crystallography, and real space imaging for structural investigations including the high voltage feedthrough assembly (100) and a method of manipulating an electrode device (30) in a vacuum environment are described.

CRYSTAL DEFECT OBSERVATION METHOD FOR COMPOUND SEMICONDUCTOR
20220268715 · 2022-08-25 · ·

A sample (4) is created by cutting out a device on a plane (10-10). The device has a gate electrode (3) formed along a direction [2-1-10] on a plane c (0001) of a compound semiconductor (1) having a wurtzite structure. Edge dislocations having Burgers vectors of 1/3[2-1-10] and 1/3[−2110] and mixed dislocations having Burgers vectors of 1/3[2-1-13] and 1/3[−2113] are observed by making an electron beam (5) incident on the sample (4) from a direction [−1010] using a transmission electron microscope.

CRYSTAL DEFECT OBSERVATION METHOD FOR COMPOUND SEMICONDUCTOR
20220268715 · 2022-08-25 · ·

A sample (4) is created by cutting out a device on a plane (10-10). The device has a gate electrode (3) formed along a direction [2-1-10] on a plane c (0001) of a compound semiconductor (1) having a wurtzite structure. Edge dislocations having Burgers vectors of 1/3[2-1-10] and 1/3[−2110] and mixed dislocations having Burgers vectors of 1/3[2-1-13] and 1/3[−2113] are observed by making an electron beam (5) incident on the sample (4) from a direction [−1010] using a transmission electron microscope.

Method of controlling transmission electron microscope and transmission electron microscope
11251016 · 2022-02-15 · ·

A method of controlling a transmission electron microscope includes: causing a first magnetic field lens to generate a first magnetic field and causing a second magnetic field lens to generate a second magnetic field; causing the magnetic field applying unit to generate a magnetic field of a direction along an optical axis on a specimen mounting surface; and changing excitations of the first excitation coil and the second excitation coil to correct a deviation of a focal length of an objective lens due to the magnetic field generated by the magnetic field applying unit.

Method of controlling transmission electron microscope and transmission electron microscope
11251016 · 2022-02-15 · ·

A method of controlling a transmission electron microscope includes: causing a first magnetic field lens to generate a first magnetic field and causing a second magnetic field lens to generate a second magnetic field; causing the magnetic field applying unit to generate a magnetic field of a direction along an optical axis on a specimen mounting surface; and changing excitations of the first excitation coil and the second excitation coil to correct a deviation of a focal length of an objective lens due to the magnetic field generated by the magnetic field applying unit.

Packaging of semiconductor X-ray detectors

Disclosed herein is an image sensor comprising: a plurality of packages arranged in a plurality of layers; wherein each of the packages comprises an X-ray detector mounted on a printed circuit board (PCB); wherein the packages are mounted on one or more system PCBs; wherein within an area encompassing a plurality of the X-ray detectors in the plurality of packages, a dead zone of the packages in each of the plurality of layers is shadowed by the packages in the other layers.