An energy filter has a plurality of sector magnets which are configured symmetrically with respect to a symmetry plane, and forms a real image on the symmetry plane. The energy filter include: an entrance aperture provided with a slit having a longitudinal direction in a direction perpendicular to an energy dispersion direction; and a hexapole and a quadrupole disposed on the symmetry plane.

A method of controlling a transmission electron microscope includes: causing a first magnetic field lens to generate a first magnetic field and causing a second magnetic field lens to generate a second magnetic field; causing the magnetic field applying unit to generate a magnetic field of a direction along an optical axis on a specimen mounting surface; and changing excitations of the first excitation coil and the second excitation coil to correct a deviation of a focal length of an objective lens due to the magnetic field generated by the magnetic field applying unit.

A method of controlling a transmission electron microscope includes: causing a first magnetic field lens to generate a first magnetic field and causing a second magnetic field lens to generate a second magnetic field; causing the magnetic field applying unit to generate a magnetic field of a direction along an optical axis on a specimen mounting surface; and changing excitations of the first excitation coil and the second excitation coil to correct a deviation of a focal length of an objective lens due to the magnetic field generated by the magnetic field applying unit.

An electron diffraction imaging system for imaging the three-dimensional structure of a single target molecule of a sample uses an electron source that emits a beam of electrons toward the sample, and a two-dimensional detector that detects electrons diffracted by the sample and generates an output indicative of their spatial distribution. A sample support is transparent to electrons in a region in which the sample is located, and is rotatable and translatable in at least two perpendicular directions. The electron beam has an operating energy between 5 keV and 30 keV, and beam optics block highly divergent electrons to limit the beam diameter to no more than three times the size of the sample molecule and provide a lateral coherence length of at least 15 nm. An adjustment system adjusts the sample support position in response to the detector output to center the target molecule in the beam.

An electron diffraction imaging system for imaging the three-dimensional structure of a single target molecule of a sample uses an electron source that emits a beam of electrons toward the sample, and a two-dimensional detector that detects electrons diffracted by the sample and generates an output indicative of their spatial distribution. A sample support is transparent to electrons in a region in which the sample is located, and is rotatable and translatable in at least two perpendicular directions. The electron beam has an operating energy between 5 keV and 30 keV, and beam optics block highly divergent electrons to limit the beam diameter to no more than three times the size of the sample molecule and provide a lateral coherence length of at least 15 nm. An adjustment system adjusts the sample support position in response to the detector output to center the target molecule in the beam.

Various methods and systems are provided for aligning zone axis of a sample with an incident beam. As one example, the alignment may be based on a zone axis tilt. The zone axis tilt may be determined based on locations of a direct beam and a zero order Laue zone in the diffraction pattern. The direct beam location may be determined based on diffraction patterns acquired with different incident angles.

A method and system for processing a diffraction pattern image obtained in an electron microscope are disclosed. The method comprises, according to a first set of microscope conditions, causing an electron beam to impinge upon a calibration specimen so as to cause resulting electrons to be emitted therefrom and monitoring the resulting electrons using a detector device so as to obtain a calibration image comprising a plurality of pixels having values, the first set of microscope conditions being configured such that the calibration image includes substantially no electron diffraction pattern; obtaining, from the calibration image, a gain variation image comprising a plurality of pixels, each having a value representing relative detector device gain for a corresponding pixel of the calibration image; according to a second set of microscope conditions, causing an electron beam to impinge upon a target specimen so as to cause resulting electrons to be emitted therefrom and monitoring the resulting electrons using the detector device so as to obtain a target image comprising a plurality of pixels having values, the second set of microscope conditions being configured such that the target image includes an electron diffraction pattern; and for each pixel of the target image, removing from the pixel value, in accordance with the value of the corresponding pixel of the gain variation image, the contribution to the pixel value of the relative detector device gain, so as to obtain a gain variation-corrected image.

A method and system for processing a diffraction pattern image obtained in an electron microscope are disclosed. The method comprises, according to a first set of microscope conditions, causing an electron beam to impinge upon a calibration specimen so as to cause resulting electrons to be emitted therefrom and monitoring the resulting electrons using a detector device so as to obtain a calibration image comprising a plurality of pixels having values, the first set of microscope conditions being configured such that the calibration image includes substantially no electron diffraction pattern; obtaining, from the calibration image, a gain variation image comprising a plurality of pixels, each having a value representing relative detector device gain for a corresponding pixel of the calibration image; according to a second set of microscope conditions, causing an electron beam to impinge upon a target specimen so as to cause resulting electrons to be emitted therefrom and monitoring the resulting electrons using the detector device so as to obtain a target image comprising a plurality of pixels having values, the second set of microscope conditions being configured such that the target image includes an electron diffraction pattern; and for each pixel of the target image, removing from the pixel value, in accordance with the value of the corresponding pixel of the gain variation image, the contribution to the pixel value of the relative detector device gain, so as to obtain a gain variation-corrected image.

An interferometric electron microscope with increased irradiating electric current density which causes electron waves to interfere with each other and includes: an electron source; an irradiating lens system a focusing lens system an observational plane an artificial grating disposed between the electron source and the irradiating lens system and diffracting the electron beam emitted from the electron source to produce a first electron wave and a second electron wave; an electron beam biprism deflecting the first electron wave and the second electron wave to pass the first electron wave through the specimen for use as an object wave and to use the second electron wave as a reference wave; and an electron beam biprism in a focusing system deflecting the objective wave and the reference wave to superimpose the objective wave and the reference wave on the observational plane to produce an image.

Disclosed herein is an image sensor comprising: a plurality of packages arranged in a plurality of layers; wherein each of the packages comprises an X-ray detector mounted on a printed circuit board (PCB); wherein the packages are mounted on one or more system PCBs; wherein within an area encompassing a plurality of the X-ray detectors in the plurality of packages, a dead zone of the packages in each of the plurality of layers is shadowed by the packages in the other layers.