Provided herein are approaches for increasing surface area of a conductive beam optic by providing grooves or surface features thereon. In one approach, the conductive beam optic may be part of an electrostatic filter having a plurality of conductive beam optics disposed along an ion beam-line, wherein at least one conductive beam optic includes a plurality of grooves formed in an exterior surface. In some approaches, a power supply may be provided in communication with the plurality of conductive beam optics, wherein the power supply is configured to supply a voltage and a current to the plurality of conductive beam optics. The plurality of grooves may be provided in a spiral pattern along a length of the conductive beam optic, and/or oriented parallel to a lengthwise axis of the conductive beam optic.

The present disclosure relates to a method includes generating ions with an ion source of an ion implantation apparatus based on an ion implantation recipe. The method includes accelerating the generated ions based on an ion energy setting in the ion implantation recipe and determining an energy spectrum of the accelerated ions. The method also includes analyzing a relationship between the determined energy spectrum and the ion energy setting. The method further includes adjusting at least one parameter of a final energy magnet (FEM) of the ion implantation apparatus based on the analyzed relationship.

Provided is a charged particle beam apparatus including: an XY stage on which a sample is placed; a charged particle beam source which irradiates the sample with a charged particle beam; a detector which detects charged particles emitted from the sample upon the irradiation with the charged particle beam; an image generator which generates an SEM image of the sample based on a detection signal output by the detector; and a controller configured to set control parameters based on a movement starting point and a movement ending point of the XY stage and control a driving unit for moving the XY stage according to the control parameters.

An ion source is configured to form an ion beam and has an arc chamber enclosing an arc chamber environment. A reservoir apparatus can be configured as a repeller and provides a liquid metal to the arc chamber environment. A biasing power supply electrically biases the reservoir apparatus with respect to the arc chamber to vaporize the liquid metal to form a plasma in the arc chamber environment. The reservoir apparatus has a cup and cap defining a reservoir environment for the liquid metal that is fluidly coupled to the arc chamber environment by holes in the cap. Features extend from the cup into the reservoir and contact the liquid metal to feed the liquid metal toward the arc chamber environment by capillary action. A structure, surface area, roughness, and material modifies the capillary action. The feature can be an annular ring, rod, or tube extending into the liquid metal.

An ion source includes a plasma chamber, and a suppression electrode disposed downstream of the plasma chamber, and is operable to irradiate the suppression electrode with an ion beam produced from a cleaning gas to clean the suppression electrode. Prior to cleaning, the ion source moves the suppression electrode or the plasma chamber in a first direction to increase a distance between the plasma chamber and the suppression electrode.

A dual beam system having a charged particle beam (CPB) lens and an ion beam column can operate in an analysis mode. In the analysis mode, an ion beam from the ion beam column can be deflected by the CPB into one or more component beams including a primary ion beam and one or more non-primary ion beams. The dual-beam system can identify the ion species of the non-primary ion beams.

An integrated circuit includes a plurality of logic function circuits disposed on the integrated circuit and interconnected by metal interconnect lines to form a logic network. A plurality of configurable logic function circuits is also disposed on the integrated circuit, each configurable logic function circuit being disposed on a respective area on the integrated circuit and not interconnected by the metal interconnect lines to form the logic network.

An ion implanter. The ion implanter may include a beamline, the beamline defining an inner wall, surrounding a cavity, the cavity arranged to conduct an ion beam. The ion implanter may also include a low emission insert, disposed on the inner wall, and further comprising a .sup.12C layer, the .sup.12C layer having a first thickness, ranging between 1 mm to 5 mm.

According to one embodiment, provided is a deflection sensitivity calculation method for calculating deflection sensitivity of a deflector in an electron beam irradiation apparatus that irradiates an irradiation object on a stage with an electron beam by causing the deflector to deflect the electron beam, the deflection sensitivity calculation method including: irradiating an area that covers an adjustment plate with an electron beam by scanning a deflection parameter that controls deflection of the deflector in a predetermined width; detecting a current value detected from the adjustment plate; forming an image corresponding to the detected current value, a number of pixels of the image being known; calculating the number of pixels of a portion corresponding to the adjustment plate in the formed image; and calculating the deflection sensitivity of the deflector.

An electron beam irradiation device that can irradiate an object in water with an electron beam is provided. An acceleration tube 11 includes an acceleration space 21 in which an electron beam generated by an electron gun 12 is accelerated and an irradiation port 22 through which the electron beam accelerated in the acceleration space 21 can be irradiated to the outside. Hydrogen gas 32 supply means 13 can supply the acceleration space 21 with hydrogen gas 32 at a predetermined pressure. The hydrogen gas 32 supplied to the acceleration space 21 by the hydrogen gas 32 supply means 13 is emitted from the irradiation port 22 and the electron beam irradiated from the irradiation port 22 passes through the hydrogen gas 32 emitted from the irradiation port 22.