Described herein are a system and method of preparing integrated circuits (ICs) so that the ICs remain electrically active and can have their active circuitry probed for diagnostic and characterization purposes using charged particle beams. The system employs an infrared camera capable of looking through the silicon substrate of the ICs to image electrical circuits therein, a focused ion beam system that can both image the IC and selectively remove substrate material from the IC, a scanning electron microscope that can both image structures on the IC and measure voltage contrast signals from active circuits on the IC, and a means of extracting heat generated by the active IC. The method uses the system to identify the region of the IC to be probed, and to selectively remove all substrate material over the region to be probed using ion bombardment, and further identifies endpoint detection means of milling to the required depth so as to observe electrical states and waveforms on the active IC.

Described herein are a system and method of preparing integrated circuits (ICs) so that the ICs remain electrically active and can have their active circuitry probed for diagnostic and characterization purposes using charged particle beams. The system employs an infrared camera capable of looking through the silicon substrate of the ICs to image electrical circuits therein, a focused ion beam system that can both image the IC and selectively remove substrate material from the IC, a scanning electron microscope that can both image structures on the IC and measure voltage contrast signals from active circuits on the IC, and a means of extracting heat generated by the active IC. The method uses the system to identify the region of the IC to be probed, and to selectively remove all substrate material over the region to be probed using ion bombardment, and further identifies endpoint detection means of milling to the required depth so as to observe electrical states and waveforms on the active IC.

A method includes forming a resist pattern, the resist pattern having trenches oriented lengthwise along a first direction and separated by resist walls along both the first direction and a second direction perpendicular to the first direction. The method further includes loading the resist pattern into an ion implanter so that a top surface of the resist pattern faces an ion travel direction, and tilting the resist pattern so that the ion travel direction forms a tilt angle with respect to an axis perpendicular to the top surface of the resist pattern. The method further includes rotating the resist pattern around the axis to a first position; implanting ions into the resist walls with the resist pattern at the first position; rotating the resist pattern around the axis by 180 degrees to a second position; and implanting ions into the resist walls with the resist pattern at the second position.

A semiconductor analysis system includes a machining device that machines semiconductor wafer to prepare a thin film sample for observation, a transmission electron microscope device that acquires a transmission electron microscope image of the thin film sample, and a host control device that controls the machining device and the transmission electron microscope device. The host control device evaluates the thin film sample based on the transmission electron microscope image, updates machining conditions based on an evaluation result of the thin film sample, and outputs the updated machining conditions to the machining device.

A semiconductor analysis system includes a machining device that machines semiconductor wafer to prepare a thin film sample for observation, a transmission electron microscope device that acquires a transmission electron microscope image of the thin film sample, and a host control device that controls the machining device and the transmission electron microscope device. The host control device evaluates the thin film sample based on the transmission electron microscope image, updates machining conditions based on an evaluation result of the thin film sample, and outputs the updated machining conditions to the machining device.

Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.

A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a portion that extends beyond the workpiece, referred to as a halo. The halo may be independently heated to compensate for etch rate non-uniformities. In some embodiments, the halo may be independently biased such that its potential is different from the potential applied to the workpiece. In certain embodiments, the halo may be divided into a plurality of thermal zones that can be separately controlled. In this way, various etch rate non-uniformities may be addressed by controlling the potential and/or temperature of the various thermal zones of the halo.

The invention relates to method of milling and imaging a sample. The method comprises the step of providing an imaging system, as well as a milling beam source. The method comprises the steps of milling, using a milling beam from said milling beam source, a sample to remove a layer of the sample; and imaging, using said imaging system, an exposed surface of the sample. As defined herein, the method further comprises the step of determining a relative position of said sample, and using said determined relative position of said sample in said milling step for positioning said sample relative to said milling beam. The relative position of said sample can be a working distance with respect to the imaging system, which can be determined by means of an autofocus procedure.

The invention relates to method of milling and imaging a sample. The method comprises the step of providing an imaging system, as well as a milling beam source. The method comprises the steps of milling, using a milling beam from said milling beam source, a sample to remove a layer of the sample; and imaging, using said imaging system, an exposed surface of the sample. As defined herein, the method further comprises the step of determining a relative position of said sample, and using said determined relative position of said sample in said milling step for positioning said sample relative to said milling beam. The relative position of said sample can be a working distance with respect to the imaging system, which can be determined by means of an autofocus procedure.

An analysis device of an embodiment is an analysis device of an active material layer of an electrode of a secondary battery, and includes a processor configured to execute a program to acquire image data that represents active materials in the active material layer processed by ion milling and voids or fillings between the active materials by a difference in brightness, and compare patterns of the difference in brightness between the image data in at least two different states of the active material layer.