Methods and apparatus are disclosed for integration of image-based metrology into a milling workflow. A first ion beam milling operation is performed to an edge at a distance from a final target position on a sample. An SEM image of the sample is used to determine a distance between the milled edge and a reference structure on the sample. Based on the determined distance, the ion beam is adjusted to perform a second milling operation to shift the milled edge to the final target position. Extensions to iterative procedures are disclosed. Various geometric configurations and corrections are disclosed. Manufacturing and analytic applications are disclosed in a variety of fields, including read-write head manufacture and TEM sample preparation. Other combinations of imaging and milling tools can be used.

Provided is a sample milling apparatus capable of milling various samples efficiently. The sample milling apparatus includes an anode, a cathode for emitting electrons which are made to collide with gas molecules so that ions are generated, an extraction electrode for causing the generated ions to be extracted as an ion beam, and a focusing electrode disposed between the cathode and the extraction electrode and applied with a focusing voltage. The spatial profile of the ion beam is controlled by varying the focusing voltage applied to the focusing electrode.

Provided is a sample milling apparatus capable of milling various samples efficiently. The sample milling apparatus includes an anode, a cathode for emitting electrons which are made to collide with gas molecules so that ions are generated, an extraction electrode for causing the generated ions to be extracted as an ion beam, and a focusing electrode disposed between the cathode and the extraction electrode and applied with a focusing voltage. The spatial profile of the ion beam is controlled by varying the focusing voltage applied to the focusing electrode.

The disclosure relates to an electronic beam machining system. The system includes a vacuum chamber; an electron gun located in the vacuum chamber and used to emit electron beam; a holder located in the vacuum chamber and used to fix an object; a control computer; and a diffraction unit located in the vacuum chamber; the diffraction unit includes a two-dimensional nanomaterial; the electron beam transmits the two-dimensional nanomaterial to form a transmission electron beam and a plurality of diffraction electron beams; the transmission electron beam and the plurality of diffraction electron beams radiate the object to form a transmission spot and a plurality of diffraction spots.

A method for forming reliefs on the surface of a substrate, including a first implantation of ions in the substrate according to a first direction; a second implantation of ions in the substrate according to a second direction that is different from the first direction; at least one of the first and second implantations is carried out through at least one mask having at least one pattern; an etching of areas of the substrate having received by implantation a dose greater than or equal to a threshold, selectively to the areas of the substrate that have not received via implantation a dose greater than said threshold; the parameters of the first and second implantations being adjusted in such a way that only areas of the substrate that have been implanted both during the first implantation and during the second implantation receive a dose greater than or equal to said threshold.

A method is provided for forming a three-dimensional article through successively depositing individual layers of powder material that are fused together so as to form the article, the method comprising the steps of: providing at least one electron beam source emitting an electron beam for at least one of heating or fusing the powder material, where the electron beam source comprises a cathode, an anode, and a Wehnelt cup between the cathode and anode; providing a guard ring between the Wehnelt cup and the anode and in close proximity to the Wehnelt cup, where the guard ring is having an aperture which is larger than an aperture of the Wehnelt cup; protecting the cathode and/or the Wehnelt cup against vacuum arc discharge energy currents when forming the three-dimensional article by providing the guard ring with a higher negative potential than the Wehnelt cup and cathode.

The presently disclosed ion sources include one or more electromagnets for changing the distribution of plasma within a discharge space of an ion source. At least one of the electromagnets is oriented about an outer periphery of a tubular sidewall of the ion source and changes a distribution of the plasma in a peripheral region of the discharge space.

Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a showerhead. The chambers may include a substrate support. The substrate support may include a platen characterized by a first surface facing the showerhead. The substrate support may include a shaft coupled with the platen along a second surface of the platen opposite the first surface of the platen. The shaft may extend at least partially through the chamber body. A coating may extend conformally about the first surface of the platen, the second surface of the platen, and about the shaft.

Provided are a laminated body and a laminated body manufacturing method that can improve adhesiveness between a resin layer and a seed layer. The laminated body has a substrate, a first wiring layer, a resin layer, and a second wiring layer in this order, and the second wiring layer includes at least an adhesive layer and a seed layer in this order.

In some embodiments of the present disclosure, a method of manufacturing a semiconductor structure includes the following operations. A substrate including a first atom and a second atom is provided. An etchant is dispatched from an ionizer. A compound is formed over the substrate by bonding the first atom with the etchant. A particle is released from an implanter. The compound is removed by bombarding the compound with the particle having an energy smaller than a bonding energy between the first atom and the second atom, wherein the particle is different from the etchant.