Multi-layer sheets of graphene-based material having a plurality of pores extending therethrough are described herein. Methods for making the sheets include exposing a graphene-based material comprising multilayer graphene having from 5 to 20 layers of graphene to a particle beam having an ion energy of at least about 1500 eV to create damage tracks in the graphene sheets. The damage tracks in the graphene sheets are then exposed to a chemical etchant, such as an oxidant to define pores through the stacked graphene sheets. Production of the damage tracks and etching of the damage tracks can take place while the graphene is disposed on a substrate.

Multi-layer sheets of graphene-based material having a plurality of pores extending therethrough are described herein. Methods for making the sheets include exposing a graphene-based material comprising multilayer graphene having from 5 to 20 layers of graphene to a particle beam having an ion energy of at least about 1500 eV to create damage tracks in the graphene sheets. The damage tracks in the graphene sheets are then exposed to a chemical etchant, such as an oxidant to define pores through the stacked graphene sheets. Production of the damage tracks and etching of the damage tracks can take place while the graphene is disposed on a substrate.

By irradiating a sample with an unfocused ion beam, processing accuracy of an ion milling device for processing a sample or reproducibility accuracy of a shape of a processed surface is improved. Therefore, the ion milling device includes a sample chamber, an ion source position adjustment mechanism provided at the sample chamber, an ion source attached to the sample chamber via the ion source position adjustment mechanism and configured to emit an ion beam, and a sample stage configured to rotate around a rotation center. When a direction in which the rotation center extends when an ion beam center of the ion beam matches the rotation center is set as a Z direction, and a plane perpendicular to the Z direction is set as an XY plane, the ion source position adjustment mechanism is capable of adjusting a position of the ion source on the XY plane and a position of the ion source in the Z direction.

Reciprocal space map of specific sample locations is generated based on the sample images acquired by irradiating the sample with a charged particle beam at multiple incident angles. The incident angles are obtained by tilting the charged particle beam and/or the sample around two perpendicular axes within the sample plane. The reciprocal space map of a selected sample location is generated based on intensity of pixels corresponding to the location in the sample images.

A detecting method and a detecting equipment therefor are provided. The detecting method includes: inspecting whether a display panel has a defective position; after acquiring the defective position of the display panel by the inspecting, using a first focused ion beam generated by a first ion overhaul apparatus to cut the defective position of the display panel, so as to strip a defect at the defective position and observe morphology of defect; using a repair apparatus to perform a repair treatment on the defective position after the defect is stripped. An inspection apparatus for the inspecting of the defective position, the first ion overhaul apparatus and the repair apparatus are sequentially installed on the same production line.

A detecting method and a detecting equipment therefor are provided. The detecting method includes: inspecting whether a display panel has a defective position; after acquiring the defective position of the display panel by the inspecting, using a first focused ion beam generated by a first ion overhaul apparatus to cut the defective position of the display panel, so as to strip a defect at the defective position and observe morphology of defect; using a repair apparatus to perform a repair treatment on the defective position after the defect is stripped. An inspection apparatus for the inspecting of the defective position, the first ion overhaul apparatus and the repair apparatus are sequentially installed on the same production line.

Disclosed herein is a composite charged particle beam apparatus including a focused ion beam column and an electron beam column, the apparatus preventing the electron beam column from being contaminated so as to emit an electron beam with high precision. The apparatus includes: a sample tray on which a sample is placed; a focused ion beam column irradiating the sample by using a focused ion beam; an electron beam column irradiating the sample by using an electron beam; a sample chamber receiving the sample tray, and the columns therein; an anti-contamination plate moving between an inserted position inserted into a space between a beam emission surface of the electron beam column and the sample tray, and an open position withdrawn from the space between the beam emission surface and the sample tray; and an operation unit operating the anti-contamination plate to move between the positions.

Disclosed herein is a composite charged particle beam apparatus including a focused ion beam column and an electron beam column, the apparatus preventing the electron beam column from being contaminated so as to emit an electron beam with high precision. The apparatus includes: a sample tray on which a sample is placed; a focused ion beam column irradiating the sample by using a focused ion beam; an electron beam column irradiating the sample by using an electron beam; a sample chamber receiving the sample tray, and the columns therein; an anti-contamination plate moving between an inserted position inserted into a space between a beam emission surface of the electron beam column and the sample tray, and an open position withdrawn from the space between the beam emission surface and the sample tray; and an operation unit operating the anti-contamination plate to move between the positions.

Apparatuses and methods directed toward endpoint detection are disclosed herein. An example method at least includes forming a plurality of lines on a top surface of a sample; removing, a plurality of times, material from a working surface of the sample, the working surface different than the top surface; imaging, a plurality of times, the sample to at least capture the plurality of lines; and determining an endpoint based on a relative spatial characteristic between two or more lines of the plurality of lines.

Apparatuses and methods directed toward endpoint detection are disclosed herein. An example method at least includes forming a plurality of lines on a top surface of a sample; removing, a plurality of times, material from a working surface of the sample, the working surface different than the top surface; imaging, a plurality of times, the sample to at least capture the plurality of lines; and determining an endpoint based on a relative spatial characteristic between two or more lines of the plurality of lines.