System and methods for processing a substrate using a reactor with multiple heating zones and control of said heating zones using a common terminal shared between two power supplies are provided. The reactor includes a heater assembly for supporting the substrate and a showerhead for supplying process gases into the reactor. An inner heater and an outer heater are integrated in the heater assembly. An inner power supply has a positive terminal connected to a first end of the inner heater and a negative terminal is connected to a second end of the inner heater that is coupled to a common terminal. An outer power supply has a positive terminal connected to a first end of the outer heater and a negative terminal connected to a second end of the outer heater that is coupled to the common terminal. A common-terminal heater module is configured to receive a measured temperature that is proximate to the inner heater. A desired temperature setting is received and a servo control law is processed to identify a direct control setting of an inner voltage of the inner power supply and an open-loop control setting of an outer voltage for the outer power supply. The outer voltage is defined as a ratio of the inner voltage.

A high-chi diblock copolymer (BCP) for self-assembly comprises a first block comprising repeat units of trimethylsilyl styrene (TMSS) and styrene, and a second block comprising an aliphatic carbonate repeat unit. The blocks are linked together by a fluorinated junction group L′ in which none of the fluorines of L′ are covalently bound to an atomic center of the polymer backbone. A top-coat free film layer comprising the BCP, which is disposed on an underlayer and in contact with an atmosphere, is capable of forming a perpendicularly oriented lamellar domain pattern on an underlayer that is preferential or non-preferential to the domains of the block copolymer. The domain pattern can be selectively etched to provide a relief pattern comprising a remaining domain. The relief pattern having good critical dimensional uniformity compared to an otherwise identical polymer lacking the silicon.

A particle charger is provided with: a filter (28) partitioning the inside of a housing (20) into a first space (29) and second space (30); a particle introducer (22) for introducing a particle into the first space; a gas ion supplier (10) for supplying the first space with a gas ion; a potential gradient creator (26, 27, 31) for creating a potential difference within the housing so as to make the gas ion and a charged particle resulting from a contact of the aforementioned particle with the gas ion move toward the second space; an AC voltage supplier (32, 33) for applying AC voltages having a phase difference to the neighboring electrodes (28a, b) included in the filter; a controller (35) for performing a control for applying, to the plurality of electrodes, predetermined voltages so as to allow the charged particle to pass through a gap between the electrodes while trapping the gas ion by the electrodes; and a charged particle extractor (23, 25, 34) for extracting the charged particle admitted to the second space to the outside of the housing. By this configuration, the occurrence frequency of the multi-charging is suppressed.

Methods and apparatuses for etching semiconductor material on substrates using atomic layer etching by chemisorption, by deposition, or by both chemisorption and deposition mechanisms in combination with oxide passivation are described herein. Methods involving atomic layer etching using a chemisorption mechanism involve exposing the semiconductor material to chlorine to chemisorb chlorine onto the substrate surface and exposing the modified surface to argon to remove the modified surface. Methods involving atomic layer etching using a deposition mechanism involve exposing the semiconductor material to a sulfur-containing gas and hydrogen to deposit and thereby modify the substrate surface and removing the modified surface.

A method and apparatus for processing a semiconductor substrate are described herein. A process system described herein includes a plasma source and a flow distribution plate. A method described herein includes generating fluorine radicals or ions, delivering the fluorine radicals or ions through one or more plasma blocking screens to a volume defined by the flow distribution plate and one of one or more plasma blocking screens, delivering oxygen and hydrogen to the volume, mixing the oxygen and hydrogen with fluorine radicals or ions to form hydrogen fluoride, flowing hydrogen fluoride through the flow distribution plate, and etching a substrate using bifluoride. The concentration of fluorine radicals or ions on the surface of the substrate is reduced to less than about two percent.

A plasma processing apparatus (5) comprises an outer shell (51) which is provided with a reaction chamber (52) in the interior, a bottom electrode which is arranged in the reaction chamber (52) and a cantilever support device (53) which goes through the outer shell (51) and supports the bottom electrode. The cantilever support device (53) is pivotally mounted on the side wall of the outer shell (51) and can rotate in the outer shell (51). The plasma processing apparatus (5) further comprises a locating device so as to selectively fix the relative position of the cantilever support device (53) and the outer shell (51).

A local dry etching apparatus includes a vacuum chamber, a nozzle opened in the vacuum chamber, a discharge tube connected to the nozzle, a workpiece table disposed in the vacuum chamber for mounting a workpiece thereon, a table driving device, a table driving control device, an electromagnetic wave oscillator, a gas supply device for supplying a raw material gas to the discharge tube, a plasma generation portion formed in the discharge tube, and an electromagnetic wave transmission unit for irradiation of electromagnetic waves oscillated in the electromagnetic wave oscillator to the plasma generation portion, in which the nozzle and the discharge tube are composed of separate parts and a temperature adjusting unit is provided for adjusting the temperature of at least one of the nozzle and the discharge tube.

An electrode plate for a plasma etching is formed as a disc shape having a predetermined thickness, a plurality of gas holes penetrating a surface of the electrode plate perpendicularly to the surface are provided on different circumferences of a plurality of concentric circles, the electrode plate is divided in a radial direction of the electrode plate into two or more regions, types of gas holes provided in the two or more regions are different from each other by region.

The plasma device includes a vessel with the first and second molds facing to each other. A work is sealed in the closed first and second molds. The work includes an object to be processed with a part to be processed and a part not to be processed on an outer periphery of the part to be processed, and a masking member covering the part not to be processed. The first mold includes a facing plane portion disposed facing an outer periphery surface of the work, a first recessed portion disposed facing the part to be processed and generating plasma, and a second recessed portion disposed facing the part not to be processed between the facing plane portion and the first recessed portion and generating plasma. A depth of the second recessed portion is different from a depth of the first recessed portion.

A protein powder is exposed to plasma at a specified temperature and power for a specified time period wherein the plasma treated protein powder includes an increased fluorescence in a melt curve at room temperature in comparison to an untreated protein.