A method for treating a ceramic component for use in a semiconductor processing chamber, wherein the ceramic component comprises a ceramic laminate comprising a base zone comprising a first dielectric ceramic material, a protective, wherein the protective zone comprises a second dielectric ceramic material, and a transition zone between the protective zone and base zone, wherein the transition zone comprises the first dielectric ceramic material and the second dielectric ceramic material, wherein exposure of the ceramic component to UV light changes an optical property of at least a first part of the ceramic component is provided. A heat treatment of the ceramic component is provided by heating the ceramic component in a furnace to a temperature of between 400? C. to 1000? C. for a period between 2 hours to 20 hours, wherein the heat treatment changes the optical property of the first part of the ceramic component.

An apparatus for treating the interior of containers includes a chamber for holding a container and provides precursor materials via an annulus formed by coaxially arranged electrodes at which plasma is created upon application of voltage and the container is treated.

The insulating properties of terminal lines on an array substrate can be maintained without adding any steps for avoiding formation of a counter electrode on the peripheral portion of a color filter substrate. A display includes an insulation film formed to cover an electrode formed on a surface of an array substrate, an oxide semiconductor film formed on a surface of a color filter substrate, and a seal member that is located between the insulation film and the oxide semiconductor film, which face each other, and that bonds the insulation film and the oxide semiconductor film together. An area surrounded by the seal member in plan view is taken as a display area. A portion of the oxide semiconductor film that corresponds to the display area is a conductor, and a portion of the oxide semiconductor film that corresponds to the outside of the display area is an insulator.

Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes a ring having a first ring component and a second ring component, an adjustable tuning ring, and an actuating mechanism. The first ring component is interfaced with the second ring component such that the second ring component is movable relative to the first ring component forming a gap therebetween. The adjustable tuning ring is positioned beneath the ring and contacts a bottom surface of the second ring component. A top surface of the adjustable tuning ring contacts the second ring component. The actuating mechanism is interfaced with the bottom surface of the adjustable tuning ring. The actuating mechanism is configured to actuate the adjustable tuning ring such that the gap between the first ring component and the second ring component varies.

Apparatus and methods for simultaneously supporting multiple workpieces inside a processing space of a plasma processing system for simultaneous two-sided plasma processing. The apparatus may be a fixture having a carrier plate configured to be supported inside the processing space and a plurality of first openings extending through the thickness of the carrier plate. The carrier plate is configured to contact each of the workpieces over an annular region at an outer peripheral edge so that the first and second sides of each of the workpieces is exposed to the plasma through a respective one of said plurality of first openings.

A transparent conductive film includes a substrate having opposed first and second surfaces; a first hard coating layer formed on the first surface; a first optical adjustment layer formed on the first hard coating layer, the first optical adjustment layer comprising a second binder resin and a plurality of second particles distributed in the second binder resin; a first transparent conductor layer formed on the first optical adjustment layer, the first transparent conductor layer having a plurality of protrusions on a surface thereof corresponding to the plurality of second particles; a second hard coating layer formed on the second surface; a second optical adjustment layer formed on the second hard coating layer; and a second transparent conductor layer formed on the second optical adjustment layer.

Embodiments of the present invention generally relate to apparatus for reducing arcing and parasitic plasma in substrate processing chambers. The apparatus generally include a processing chamber having a substrate support, a backing plate, and a showerhead disposed therein. A showerhead suspension electrically couples the backing plate to the showerhead. An electrically conductive bracket is coupled to the backing plate and spaced apart from the showerhead. The electrically conductive bracket may include a plate, a lower portion, an upper portion, and a vertical extension. The electrically conductive bracket contacts an electrical isolator.

The insulating properties of terminal lines on an array substrate can be maintained without adding any steps for avoiding formation of a counter electrode on the peripheral portion of a color filter substrate. A display includes an insulation film formed to cover an electrode formed on a surface of an array substrate, an oxide semiconductor film formed on a surface of a color filter substrate, and a seal member that is located between the insulation film and the oxide semiconductor film, which face each other, and that bonds the insulation film and the oxide semiconductor film together. An area surrounded by the seal member in plan view is taken as a display area. A portion of the oxide semiconductor film that corresponds to the display area is a conductor, and a portion of the oxide semiconductor film that corresponds to the outside of the display area is an insulator.

Various RF plasma systems are disclosed that do not require a matching network. In some embodiments, the RF plasma system includes an energy storage capacitor; a switching circuit coupled with the energy storage capacitor, the switching circuit producing a plurality of pulses with a pulse amplitude and a pulse frequency, the pulse amplitude being greater than 100 volts; a resonant circuit coupled with the switching circuit. In some embodiments, the resonant circuit includes: a transformer having a primary side and a secondary side; and at least one of a capacitor, an inductor, and a resistor. In some embodiments, the resonant circuit having a resonant frequency substantially equal to the pulse frequency, and the resonant circuit increases the pulse amplitude to a voltage greater than 2 kV.

The invention includes a gas processing system for transforming a hydrocarbon-containing inflow gas into outflow gas products, where the system includes a gas delivery subsystem, a plasma reaction chamber, and a microwave subsystem, with the gas delivery subsystem in fluid communication with the plasma reaction chamber, so that the gas delivery subsystem directs the hydrocarbon-containing inflow gas into the plasma reaction chamber, and the microwave subsystem directs microwave energy into the plasma reaction chamber to energize the hydrocarbon-containing inflow gas, thereby forming a plasma in the plasma reaction chamber, which plasma effects the transformation of a hydrocarbon in the hydrocarbon-containing inflow gas into the outflow gas products, which comprise acetylene and hydrogen. The invention also includes methods for the use of the gas processing system.