Disclosed is an apparatus for treating a substrate. The substrate treating apparatus may include a chamber for generating plasma in a treating space and treating a substrate using the plasma, and a measurement unit for monitoring light emitted from the plasma of the treating space, in which the measurement unit may include a light collection unit for collecting the light passing through a view port formed on one side wall of the chamber; and an optical cable having a connection terminal fastened to the light collection unit formed at one end to transmit the light, in which a measurement member capable of measuring a fastening length between the light collection unit and the optical cable is disposed in the connection terminal.

A measuring instrument according to an exemplary embodiment includes a base board, at least one sensor chip provided on the base board, and a circuit board provided on the base board. The at least one sensor chip includes a sensor unit including a signal electrode having a front surface intersecting the base board in a radial direction, a guard electrode disposed on a rear side of the signal electrode, and a first ground electrode disposed on a rear side of the guard electrode. The at least one sensor chip includes a second ground electrode extending along a lower surface of the sensor unit. A space between the second ground electrode and the sensor unit is filled with an insulating material.

A power supply system for a plasma process includes two separate power supplies of essentially identical performance characteristics, including a first power supply and a second power supply, and a data transfer connection operably coupling the two power supplies for data communication between the two power supplies. The first power supply is configured to: receive, in a standby mode, data via the data transfer connection from the second power supply supplying power to a plasma process in a normal operating mode, and supply, in an active backup mode, power to the plasma process in place of the second power supply, as a function of the received data. The first power supply can supply in the active backup mode to the plasma process the power having one or more characteristics that are substantially the same as those of the power provided by the second power supply in the normal operating mode.

The present invention provides a plasma treatment detection indicator including a color-changing layer that changes color by plasma treatment, exhibiting excellent heat resistance, with the gasification of the color-changing layer or the scattering of the fine debris of the color-changing layer caused by the plasma treatment being suppressed to the extent that electronic device properties are not affected. Specifically, the present invention provides a plasma treatment detection indicator comprising a color-changing layer that changes color by plasma treatment, the color-changing layer comprising metal oxide fine particles containing at least one element selected from the group consisting of Mo, W, Sn, V, Ce, Te, and Bi, the metal oxide fine particles having a mean particle size of 50 μm or less.

A plasma processing apparatus 10 includes: a stage 11 for placing an object to be processed; a chamber 12 housing the stage 11, and having a first opening 12a at a top; a first dielectric member 13 forming a first space Si in the chamber 12 by closing the first opening 12a, and having a second opening 13a; a second dielectric member 15 forming a second space S2, the second space communicating with the first space S1 via the second opening 13a and extending more upward than the first dielectric member 13; and first and induction coils 16 and 17 for generating a plasma for processing the object, the former provided above the first dielectric member 13 so as to extend from a central side toward an outer peripheral side of the first dielectric member 13, and the latter provided so as to surround the second dielectric member 15.

Power supplies, waveform function generators and methods for controlling a plasma process are described. The power supplies or waveform function generators include a component for executing the method in which a waveform shape change index is determined during a plasma process and evaluated for compliance with a predetermined tolerance.

A plasma processing method including: a film formation step of forming a silicon-containing film on a surface of a member inside a chamber by plasma of a silicon-containing gas and a reducing gas; a plasma processing step of plasma-processing a workpiece carried into the chamber by plasma of a processing gas after the silicon-containing film is formed on the surface of the member; and a removal step of removing the silicon-containing film from the surface of the member by plasma of a fluorine-containing gas after the plasma-processed workpiece is carried out of the chamber.

In an embodiment, a plasma processing tool with an extendable probe is described. In an embodiment, the plasma processing tool comprises a chamber, and a pedestal for supporting a substrate. In an embodiment, an edge ring is around a perimeter of the pedestal. Additionally, a sensor at an end of a probe is provided. In an embodiment, the probe is configured to extend over the pedestal.

A vacuum coating and plasma treatment system includes a magnetron cathode with a long edge and a short edge. The magnetic pole of the magnetron results in an electromagnetic barrier. At least one remote arc discharge is generated separate from the magnetron cathode and in close proximity to the cathode so that it is confined within a volume adjacent to the magnetron target. The remote arc discharge extends parallel to the long edge of the magnetron target and is defined by the surface of the target on one side and the electromagnetic barrier on all other sides. There is a remote arc discharge cathode hood and anode hood extending over the arc discharge and across the short edge of the magnetron cathode. Outside of the plasma assembly is a magnetic system creating magnetic field lines which extend into and confine the plasma in front of the substrate.

Systems and methods for plasma processing of microfeature workpieces are disclosed herein. In one embodiment, a method includes generating a plasma in a chamber while a microfeature workpiece is positioned in the chamber, measuring optical emissions from the plasma, and determining a parameter of the plasma based on the measured optical emissions. The parameter can be an ion density or another parameter of the plasma.