A method is presented for cleaning an ion implanter during operation of the ion implanter. The method includes generating a gallium (III) iodide (GaI.sub.3) vapor from a GaI.sub.3 source running concurrently with a hydrogen-containing gaseous plasma to cause a reaction with at least iodine (I) residue deposits, selectively filtering ions from the GaI.sub.3 vapor and the hydrogen-containing gaseous plasms to create a Ga ion beam, and directing the Ga ion beam onto a semiconductor substrate for Ga implantation. After completion of the Ga implantation, an argon (Ar) based ion beam is run through the ion implanter for post-cleaning of the ion implanter.

Embodiments relate to a grid short clearing system is provided for gridded ion beam sources used in industrial applications for materials processing systems that reduces grid damage during operation. In various embodiments, the ion source is coupled to a process chamber and a grid short clearing system includes methods for supplying a gas to the process chamber and setting the gas pressure to a predetermined gas pressure in the range between 50 to 750 Torr, applying an electrical potential difference between each adjacent pair of grids using a current-limited power supply, and detecting whether or not the grid shorts are cleared. The electrical potential difference between the grids is at least 10% lower than the DC electrical breakdown voltage between the grids with no contaminants.

Embodiments relate to a grid short clearing system is provided for gridded ion beam sources used in industrial applications for materials processing systems that reduces grid damage during operation. In various embodiments, the ion source is coupled to a process chamber and a grid short clearing system includes methods for supplying a gas to the process chamber and setting the gas pressure to a predetermined gas pressure in the range between 50 to 750 Torr, applying an electrical potential difference between each adjacent pair of grids using a current-limited power supply, and detecting whether or not the grid shorts are cleared. The electrical potential difference between the grids is at least 10% lower than the DC electrical breakdown voltage between the grids with no contaminants.

Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component, such as an energy purity module, having a plurality of conductive beam optics contained therein. The system further includes a power supply system for supplying a voltage and a current to the beam-line component during a cleaning mode, wherein the power supply system may include a first power plug coupled to a first subset of the plurality of conductive beam optics and a second power plug coupled to a second subset of the plurality of conductive beam optics. During a cleaning mode, the voltage and current may be simultaneously supplied and split between each of the first and second power plugs.

Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component, such as an energy purity module, having a plurality of conductive beam optics contained therein. The system further includes a power supply system for supplying a voltage and a current to the beam-line component during a cleaning mode, wherein the power supply system may include a first power plug coupled to a first subset of the plurality of conductive beam optics and a second power plug coupled to a second subset of the plurality of conductive beam optics. During a cleaning mode, the voltage and current may be simultaneously supplied and split between each of the first and second power plugs.

An electrostatic chuck and gripping system are configured for clamping and processing workpieces having differing diameters. An ion implantation apparatus selectively provides ions to a first workpiece and a second workpiece in a process chamber, where a diameter of the first workpiece is greater the second workpiece. A chuck supports the respective first or second workpiece within the process chamber during exposure to the ions. A load lock chamber isolates a process environment from an external environment and has a workpiece support for the respective first or second workpiece during a transfer of the first or second workpiece between the process chamber and the external environment. A vacuum robot transfers the first or second workpiece between the chuck and workpiece support, and has a gripper mechanism configured to selectively grip the first or second workpiece between a plurality of stepped guides.

One process used to remove material from a surface is ion etching. In certain cases, ion etching involves delivery of both ions and a reactive gas to a substrate. The disclosed embodiments permit local high pressure delivery of reactive gas to a substrate while maintaining a much lower pressure on portions of the substrate that are outside of the local high pressure delivery area. In many cases, the low pressure is achieved by providing an injection head that confines the high pressure reactant delivery to a small area and vacuums away excess reactants and byproducts as they leave this small area and before they enter the larger substrate processing region. The disclosed injection head may be used to increase throughput while minimizing deleterious collisions between ions and other species present in the substrate processing region. The disclosed injection head may also be used in other types of semiconductor wafer processing.

One process used to remove material from a surface is ion etching. In certain cases, ion etching involves delivery of both ions and a reactive gas to a substrate. The disclosed embodiments permit local high pressure delivery of reactive gas to a substrate while maintaining a much lower pressure on portions of the substrate that are outside of the local high pressure delivery area. In many cases, the low pressure is achieved by providing an injection head that confines the high pressure reactant delivery to a small area and vacuums away excess reactants and byproducts as they leave this small area and before they enter the larger substrate processing region. The disclosed injection head may be used to increase throughput while minimizing deleterious collisions between ions and other species present in the substrate processing region. The disclosed injection head may also be used in other types of semiconductor wafer processing.

The present invention describes a process for coating conductive component in a plasma reactor and a conductive component coating, wherein the process includes the steps of cleaning, mechanical support deposition, topographic modification by plasma bombardment, chemical support layer deposition and amorphous carbon layer deposition (Diamond-Like Carbon). In one embodiment, the process is in single cycle. The present invention pertains to the fields of Materials Engineering, Physics and Chemistry.

The present invention describes a process for coating conductive component in a plasma reactor and a conductive component coating, wherein the process includes the steps of cleaning, mechanical support deposition, topographic modification by plasma bombardment, chemical support layer deposition and amorphous carbon layer deposition (Diamond-Like Carbon). In one embodiment, the process is in single cycle. The present invention pertains to the fields of Materials Engineering, Physics and Chemistry.