Patent classifications
H01J41/18
Ion pump with direct molecule flow channel through anode
An ultra-high vacuum (UHV) system includes a UHV cell and an ion pump to maintain the UHV in the UHV cell. The ion pump has a GCC (glass, ceramic, or crystalline) housing. An interior wall of the ion-pump housing serves as an anode or bears a coating that serves as an anode. At least one cathode is disposed with respect to the housing so that it can cooperate with the anode to form an electric field for establishing a Penning trap. The GCC housing defines a flow channel that extends radially through the anode so that a molecule can flow directly into the most ionizing region of a Penning trap.
ION TRAJECTORY MANIPULATION ARCHITECTURE IN AN ION PUMP
An ion pump includes an anode, a backing surface having at least one surface structure extending toward the anode and a cathode positioned between the anode and the backing surface and having an opening such that the at least one surface structure is aligned with the opening.
Laminated Ultra-High Vacuum Forming Device
Provided is an ultra-high vacuum forming device containing an ion pump having a compact size in the central axis direction. The ultra-high vacuum forming device (1) is provided with at least one ion pump (100). The ion pump (100) is provided with: a casing (110) having at least one opening (111, 112); a board-shaped electrode group (120) formed by means of a central opening (120a) being formed along a predetermined central axis (C) disposed within the casing (110), and a plurality of electrodes (121) being joined with spaces therebetween; a pair of board-shaped electrodes (131, 132) having a different polarity than that of the electrode group (120) and that are disposed at positions sandwiching both sides of the electrode group (120) within the casing (110); and a pair of board-shaped magnets (141, 142) disposed at positions sandwiching both sides of the pair of board-shaped electrodes (131, 132).
Plasma source, and atomic clock employing plasma source
A small plasma source that enables highly efficient discharge in an ultra-high vacuum state includes a first magnet, a second magnet arranged so that a second magnetic pole faces the first magnetic pole of the first magnet, a third magnet having the second magnetic pole directed in the same direction as the first magnetic pole of the first magnet and arranged to surround the first magnet, a fourth magnet having the first magnetic pole different from the second magnetic pole facing the second magnetic pole of the third magnet and arranged to surround the second magnet, a first electrode provided on sides of the first magnetic pole of the first magnet and the second magnetic pole of the third magnet, a second electrode facing the first electrode and provided on sides of the second magnetic pole of the second magnet and the first magnetic pole of the fourth magnet, and a third electrode arranged between the first electrode and the second electrode. A value obtained by dividing a shorter distance between a distance between the first magnet and the second magnet and a distance between the third magnet and the fourth magnet by an average value of thicknesses of the first to fourth magnets is 1 or more and 10 or less.
Plasma source, and atomic clock employing plasma source
A small plasma source that enables highly efficient discharge in an ultra-high vacuum state includes a first magnet, a second magnet arranged so that a second magnetic pole faces the first magnetic pole of the first magnet, a third magnet having the second magnetic pole directed in the same direction as the first magnetic pole of the first magnet and arranged to surround the first magnet, a fourth magnet having the first magnetic pole different from the second magnetic pole facing the second magnetic pole of the third magnet and arranged to surround the second magnet, a first electrode provided on sides of the first magnetic pole of the first magnet and the second magnetic pole of the third magnet, a second electrode facing the first electrode and provided on sides of the second magnetic pole of the second magnet and the first magnetic pole of the fourth magnet, and a third electrode arranged between the first electrode and the second electrode. A value obtained by dividing a shorter distance between a distance between the first magnet and the second magnet and a distance between the third magnet and the fourth magnet by an average value of thicknesses of the first to fourth magnets is 1 or more and 10 or less.