A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.

A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.

A gaseous-phase ionizing radiation generator for the voltage controlled production, flux, and use of one or more forms of ionizing electromagnetic and/or particulate radiation including: embodiments to collect and convert the particulate radiation that is generated by the radiation generator into electricity; embodiments that generate electricity from the ionized gas within the radiation generator by means of an auxiliary electrode structure composed of interdigitated individual electrodes of alternating work function; and a method or procedure for the fabrication and the activation of at least one working electrode composed in part of a metal hydride host material that is not formally considered to be radioactive.

A gaseous-phase ionizing radiation generator for the voltage controlled production, flux, and use of one or more forms of ionizing electromagnetic and/or particulate radiation including: embodiments to collect and convert the particulate radiation that is generated by the radiation generator into electricity; embodiments that generate electricity from the ionized gas within the radiation generator by means of an auxiliary electrode structure composed of interdigitated individual electrodes of alternating work function; and a method or procedure for the fabrication and the activation of at least one working electrode composed in part of a metal hydride host material that is not formally considered to be radioactive.

A high brightness laser-sustained broadband light source includes a gas containment structure and a pump laser configured to generate a pump beam including illumination of a wavelength at least proximate to a weak absorption line of a neutral gas contained in the gas containment structure. The broadband light source includes one or more anamorphic illumination optics configured to focus the pump beam into an approximately elliptical beam waist positioned in or proximate to the center of the gas containment structure. The broadband light source includes one or more first collection optics configured to collect broadband radiation emitted by the plasma in a direction substantially aligned with a longer axis of the elliptical beam waist.

A mercury-free high-pressure metal-halide ultraviolet gas-discharge lamp comprising a primary filling of at least one of osmium, germanium and tellurium, and a secondary filling comprising at least one of tin, antimony, indium, tantalum and gold. In a preferred embodiment, the primary filling is TeI2 and the secondary filling is SbI3.

A product having at least one plasma lamp that includes plates that are approximately parallel, with at least one array of microcavities formed in a surface of at least one plate. When desirable, the plates are separated a fixed distance by spacers with at least one spacer being placed near the plate's edge to form a hermetic seal therewith. A gas makes contact with the microcavity array. Electrodes capable of delivering a time-varying voltage are located such that the application of the time-varying voltage interacts with the gas to form a glow discharge plasma in the microcavities and the fixed volume between the plates. The glow discharge plasma efficiently and uniformly emits radiation that is predominantly in the UV/VUV spectral range with at least a portion of the radiation being emitted from the plasma lamp.

An EUV light generation apparatus includes: a chamber; an EUV light condensing mirror positioned inside the chamber and having a reflective surface that determines a first focal point and a second focal point, the reflective surface and the second focal point being positioned on respective sides of a first surface; at least one magnet configured to generate a magnetic field at and around the first focal point; a first gas supply unit configured to supply first gas to the reflective surface in the chamber and opened near an outer peripheral part of the reflective surface; a second gas supply unit configured to supply second gas into the chamber and opened at a position between the first surface and the second focal point; and a discharge device configured to discharge gas inside the chamber and opened at a position between the first focal point and the at least one magnet.

An EUV light generation apparatus includes: a chamber; an EUV light condensing mirror positioned inside the chamber and having a reflective surface that determines a first focal point and a second focal point, the reflective surface and the second focal point being positioned on respective sides of a first surface; at least one magnet configured to generate a magnetic field at and around the first focal point; a first gas supply unit configured to supply first gas to the reflective surface in the chamber and opened near an outer peripheral part of the reflective surface; a second gas supply unit configured to supply second gas into the chamber and opened at a position between the first surface and the second focal point; and a discharge device configured to discharge gas inside the chamber and opened at a position between the first focal point and the at least one magnet.

A plasma lamp includes plates that are approximately parallel, with at least one array of microcavities formed in a surface of at least one plate. When desirable, the plates are separated a fixed distance by spacers with at least one spacer being placed near the plate's edge to form a hermetic seal therewith. A gas makes contact with the microcavity array. Electrodes capable of delivering a time-varying voltage are located on the surface of each plate. At least one electrode is located on an exterior surface of at least one interior plate. Optionally, protective windows may be placed over the electrodes. The application of the time-varying voltage interacts with the gas to form a glow discharge plasma in the microcavities and the fixed volume between the plates (when present). The glow discharge plasma efficiently and uniformly emits UV/VUV radiation over the entire surface of the lamp.