A vacuum integrated electronic device has an anode region of conductive material; an insulating region on top of the anode region; a cavity extending through the insulating region and having a sidewall; and a cathode region. The cathode region has a tip portion extending peripherally within the cavity, adjacent to the sidewall of the cavity. The cathode region is formed by tilted deposition, carried out at an angle of 30-60 with respect to a perpendicular to the surface of device.

A vacuum integrated electronic device has an anode region of conductive material; an insulating region on top of the anode region; a cavity extending through the insulating region and having a sidewall; and a cathode region. The cathode region has a tip portion extending peripherally within the cavity, adjacent to the sidewall of the cavity. The cathode region is formed by tilted deposition, carried out at an angle of 30-60 with respect to a perpendicular to the surface of device.

An apparatus for processing a substrate is provided. A capacitively coupled plasma electrode is within a capacitively coupled plasma processing chamber. A plasma confinement component is within the capacitively coupled plasma processing chamber, wherein at least one of the capacitively coupled plasma electrode and plasma confinement component comprises a metal component body with a plasma facing surface and a plasma spray coating over the plasma facing surface.

Disclosed is a method for manufacturing a field emitter, comprising: forming a primary epitaxial layer on a substrate; forming a plurality of secondary epitaxial structures on the primary epitaxial layer; forming an emitter electrode layer and a dielectric layer between the emitter electrode layer and the plurality of secondary epitaxial structures on the primary epitaxial layer; sequentially forming a protective layer, an insulating layer, a gate electrode layer and a planarization layer which are laminated on the dielectric layer and the plurality of secondary epitaxial structures; etching the planarization layer to expose part of the gate electrode layer on the dielectric layer and part of the secondary epitaxial structure; etching and removing the protective layer, the insulating layer and the exposed part of the gate electrode layer on part of the secondary epitaxial structure so as to expose part of the secondary epitaxial structure; forming a gate connection electrode layer on the exposed gate electrode layer on the dielectric layer; forming an anode opposite to the exposed part of the secondary epitaxial structure, the anode and the exposed part of the secondary epitaxial structure having a predetermined distance from each other. Further disclosed is a field emitter.