The invention relates to a metal jet x-ray tube which is less affected by the problem of the power density at the point of impact of the electron beam on the anode component than conventional tubes. For this purpose the metal jet x-ray tube has a metal jet (6) as anode component (7), which metal jet is so thin that an electron beam (4) impinging on the metal jet (6) is only partially decelerated by the metal jet. Furthermore a blade cathode is provided as a cathode component (3), which blade cathode comprises a cathode blade (10) directed with a slight inclination downwards in the direction of the liquid metal jet (6) of the anode component (7).

The present disclosure provides a method of manufacturing a carbon nanotube electron emitter, including: forming a carbon nanotube film; performing densification by dipping the carbon nanotube film in a solvent; cutting an area of the carbon nanotube film into a pointed shape or a line shape; and fixing the cutting area of the carbon nanotube film arranged between at least two metal members to face upwards with lateral pressure.

Provided is an X-ray source including a vacuum closed tube. The X-ray source includes a high voltage connection module, a tube module, and a magnetic lens system into which the tube module is inserted. The tube module includes a vacuum closed tube. The vacuum closed tube includes a cathode electrode provided at one end thereof, a nano-emitter on the cathode electrode, an anode electrode provided at the other end, and a first insulation spacer provided between the cathode electrode and the anode electrode. In addition, the vacuum closed tube includes a first conductive tube and a second conductive tube both provided between the cathode electrode and the anode electrode and separated from each other by the first insulation spacer, and a first collimator block covering an inner surface of the first insulation spacer and having a first opening.

The present disclosure provides a method of manufacturing a carbon nanotube electron emitter, including: forming a carbon nanotube film; performing densification by dipping the carbon nanotube film in a solvent; cutting an area of the carbon nanotube film into a pointed shape or a line shape; and fixing the cutting area of the carbon nanotube film arranged between at least two metal members to face upwards with lateral pressure.

Some example embodiments provide an x-ray tube for a stereoscopic imaging having an evacuated x-ray tube housing; an electron emitter apparatus in the x-ray tube housing, the electron emitter apparatus including a first field effect emitter with a first emitter surface and a second field effect emitter with a second emitter surface, at least one of the first emitter surface or the second emitter surface being segmented such that a portion of the at least one of the first emitter surface or the second emitter surface can be set relative to the respective overall emitter surface by selectively switching emitter segments of the at least one of the first emitter surface or the second emitter surface; an anode unit in the x-ray tube housing, the anode unit configured to generate x-ray radiation for the stereoscopic imaging as a function of electrons striking two focal points; and a control unit.

A method for fabricating silicon die stacks for electron emitter chips by applying sintering to bind a silicon substrate die to other die layers. Metal powder is applied to the bonding surface of the die, covered with the chip carrier or chip and compressed between two heated plates. The bonding pads of the die may be conductively coupled to corresponding bonding pads of the other die layers.

An emitter with a diameter of 100 nm or less is used with a protective cap layer and a diffusion barrier between the emitter and the protective cap layer. The protective cap layer is disposed on the exterior surface of the emitter. The protective cap layer includes molybdenum or iridium. The emitter can generate an electron beam. The emitter can be pulsed.

Emitter (3) and target (7) are arranged so as to face each other in vacuum chamber (1), and guard electrode (5) is provided at outer circumferential side of electron generating portion (31) of emitter (3). Guard electrode (5) is supported movably in directions of both ends of vacuum chamber (1) by guard electrode supporting unit (6). To perform regeneration process of guard electrode (5), guard electrode (5) is moved to opening (22) side (to separate position) by operating guard electrode supporting unit (6), and a state in which field emission of electron generating portion (31) is suppressed is set, then by applying voltage across guard electrode (5), discharge is repeated. After performing regeneration process, by operating guard electrode supporting unit (6) again, guard electrode (5) is moved to opening (21) side (to emitter position), and a state in which field emission of electron generating portion (31) is possible is set.

The present invention relates to large area field emission devices based on the incorporation of macroscopic, microscopic, and nanoscopic field enhancement features and a designed forced current sharing matrix layer to enable a stable high-current density long-life field emission device. The present invention pertains to a wide range of field emission sources and is not limited to a specific field emission technology. The invention is described as an X-ray electron source but can be applied to any application requiring a high current density electron source.

An emitter (3) and a target (7) are arranged so as to face each other in a vacuum chamber (1), and a guard electrode (5) is provided at an outer circumferential side of an electron generating portion (31) of the emitter (3). The emitter (3) is supported movably in both end directions of the vacuum chamber (1) by the emitter supporting unit (4) having a movable body (40). The emitter supporting unit (4) is operated by an operating unit (6) connected to the emitter supporting unit (4). By operating the emitter supporting unit (4) by the operating unit (6), a distance between the electron generating portion (31) of the emitter (3) and the target (7) is changed, and a position of the emitter (3) is fixed at an arbitrary distance, then field emission is performed with the position of the emitter (3) fixed.