An ion implantation system including an ion implanter, a dopant source gas supply system and a monitoring system is provided. The ion implanter is inside a housing and includes an ion source unit. The dopant source gas supply system includes a first and a second dopant source gas storage cylinder in a gas cabinet outside of the housing and configured to supply a dopant source gas to the ion source unit, and a first and a second dopant source gas supply pipe coupled to respective first and second dopant source gas storage cylinders. Each of the first and second dopant source gas supply pipes includes an inner pipe and an outer pipe enclosing the inner pipe. The monitoring system is coupled to the outer pipe of each of the first and the second dopant source gas supply pipes.

A system for preventing collisions between components in a particle beam instrument is disclosed. The system is particularly beneficial in use with instruments wherein moveable components are used within a chamber that obscures them from being viewed from outside the chamber. The system comprises: a capacitance sensor configured to monitor the capacitance between a first component and a second component of the instrument, and a proximity module configured to: derive a capacitance parameter from the monitored capacitance between the first component and the second component; and output a proximity alert signal in accordance with a comparison between the derived capacitance parameter and a predetermined capacitance parameter threshold value.

The present disclosure relates to an integrated chip processing tool. The integrated chip processing tool includes a gas distribution ring configured to extend along a perimeter of a process chamber. The gas distribution ring includes a lower ring extending around the process chamber. The lower ring has a plurality of gas inlets arranged along a bottom surface of the lower ring and a plurality of gas conveyance channels arranged along an upper surface of the lower ring directly over the plurality of gas inlets. The gas distribution ring further includes an upper ring disposed on the upper surface of the lower ring and covering the plurality of gas conveyance channels. A plurality of gas outlets are arranged along opposing ends of the plurality of gas conveyance channels. A plurality of gas conveyance paths extending between the plurality of gas inlets and the plurality of gas outlets have approximately equal lengths.

A substrate treating apparatus includes a chamber having a treatment space therein, a substrate support unit that supports a substrate in the treatment space, a gas supply unit that supplies a gas into the treatment space, and a plasma generation unit including an RF power supply that applies RF power, wherein the plasma generation unit generates plasma from the gas using the RF power. The substrate support unit includes a support plate that supports the substrate and a heating unit that controls temperature of the substrate. The heating unit includes a heating member, a heater power supply that applies power to the heating member, and a filter unit that prevents coupling of the heating member and the RF power supply. The filter unit includes a filter that interrupts the RF power supplied from the RF power supply and a filter control unit that prevents degradation in performance of the filter.

A vacuum apparatus according to an embodiment includes a chamber configured air-tightly, a vacuum pump configured to exhaust gas from the chamber, and an exhaustion structure placed between the chamber and an inlet port of the vacuum pump and having a ventilation path surrounded by a wall of the exhaustion structure. The vacuum pump exhausts gas from the chamber through the ventilation path of the exhaustion structure. A layer of thermal energy absorbing material is formed on at least part of an inner surface of the wall of the exhaustion structure to absorb energy of thermal radiation emitted from the inlet port of the vacuum pump.

A charged-particle beam microscope is provided for imaging a sample. The microscope has a vacuum chamber to maintain a low-pressure environment. A stage is provided to hold a sample in the vacuum chamber. The microscope has a charged-particle beam source to generate a charged-particle beam. The microscope also has charged-particle beam optics to converge the charged-particle beam onto the sample and a detector to detect charged-particle radiation emanating from the sample. The microscope has a controller to analyze the detected charged-particle radiation to generate an image of the sample. A power supply is provided that has a battery to power at least the charged-particle beam optics and the controller.

The present invention relates to a member for a plasma etching device and a method of manufacturing the same, and more particularly to a member for a plasma etching device, which is improved in plasma resistance through deposition of a rare-earth metal thin film and surface heat treatment and the optical transmittance of which is maintained, thus being useful as a member for analyzing the end point of an etching process, and a method of manufacturing the same.

According to one aspect of the present invention, a charged particle beam image acquisition apparatus includes a rectangular parallelepiped chamber where a target object is disposed; a primary electron optical column placed on an upper surface of the chamber so that a point of intersection between two diagonal lines on the upper surface of the chamber is located at a center of a horizontal section of the primary electron optical column, a primary charged particle beam optics irradiating the target object with a primary charged particle beam being disposed in the primary electron optical column; and a secondary electron optical column connected to a lower portion of the primary electron optical column, a secondary charged particle beam optics being disposed in the secondary electron optical column and a secondary charged particle beam passing through the secondary charged particle beam optics.

A method of applying a multi-layer plasma resistant coating on an article comprises performing plating or ALD to form a conformal first plasma resistant layer on an article, wherein the conformal first plasma resistant layer is formed on a surface of the article and on walls of high aspect ratio features in the article. The conformal first plasma resistant coating has a porosity of approximately 0% and a thickness of approximately 200 nm to approximately 1 micron. One of electron beam ion assisted deposition (EB-IAD), plasma enhanced chemical vapor deposition (PECVD), aerosol deposition or plasma spraying is then performed to form a second plasma resistant layer that covers the conformal first plasma resistant layer at a region of the surface but not at the walls of the high aspect ratio features.

A drawing apparatus according to the embodiment includes a chamber configured to house a processing target; a drawing part configured to draw a predetermined pattern on the processing target with a charged particle beam; a resistance measuring part configured to measure a resistance value of the processing target via a grounding member grounding the processing target in the chamber; a receiver configured to receive earthquake information; a controller configured to stop a drawing process in the chamber when the receiver receives the earthquake information; and an arithmetic processor configured to determine whether the processing target is grounded on a basis of the resistance value from the resistance measuring part, wherein the controller resumes the drawing process when the arithmetic processor determines that the processing target is grounded after the drawing process is stopped.