An ion implanter has a coating of low resistivity silicon carbide on one or more of the conductive surfaces that are exposed to ions. For example, ions are generated in an ion source chamber, and the interior surfaces of the walls are coated with low resistivity silicon carbide. Since silicon carbide is hard and resistant to sputtering, this may reduce the amount of contaminant ions that are introduced into the ion beam that is extracted from the ion source chamber. In some embodiments, the extraction electrodes are also coated with silicon carbide to reduce the contaminant ions introduced by these components.

An ion source includes an external housing, an electrically conductive tip, a gas supply system, configured to supply an operating gas into the neighborhood of the tip, and a cooling system configured to cool the tip. The gas supply system includes a first tube with a hollow interior, and a chemical getter material is provided in the hollow interior of the tube.

An arc chamber has a liner operably coupled to body. The liner has a second surface recessed from a first surface and a hole having a first diameter. The liner has a liner lip extending upwardly from the second surface toward the first surface that surrounds the hole and has a second diameter. An electrode has a shaft and head. The shaft has a third diameter that is less than the first diameter and passes through the body and hole and is electrically isolated from the liner by an annular gap. The head has a fourth diameter and a third surface having an electrode lip extending downwardly from the third surface toward the second surface. The electrode lip has a fifth diameter that is between the second and fourth diameters. A spacing between the liner lip and electrode lip defines a labyrinth seal and generally prevents contaminants from entering the annular gap. The shaft has an annular groove configured to accept a boron nitride seal.

A charged particle beam device includes a lens barrel having a charged particle source, a sample chamber in which a sample to be irradiated with a charged particle beam is provided, and a heat emission type electron source disposed in the sample chamber and maintained at a lower potential than that of an inner wall of the sample chamber, in which the inside of the sample chamber is cleaned by electrons (e−) emitted from the heat emission type electron source after a heating current is generated by applying a voltage from an electron source power supply. The heat emission type electron source is maintained at a lower potential than that of the inner wall of the sample chamber by applying a negative voltage to the heat emission type electron source using a bias power supply. A magnitude of the negative voltage applied to the heat emission type electron source is preferably about 30 to 1000 V, particularly preferably about 60 to 120 V.

An apparatus provided with a wafer processing chamber that houses a wafer supporting mechanism supporting a wafer and is used to irradiate the wafer supported by the wafer supporting mechanism with an ion beam and a transport mechanism housing chamber that houses a transport mechanism provided underneath the wafer processing chamber and used for moving the wafer supporting mechanism in a substantially horizontal direction, wherein an aperture used for moving the wafer supporting mechanism along with a coupling member coupling the wafer supporting mechanism to the transport mechanism is formed in the direction of movement of the transport mechanism in a partition wall separating the wafer processing chamber from the transport mechanism housing chamber.

A gas field ionization source in which an ion beam current is stable for a long time is achieved in an ion beam apparatus equipped with a field ionization source that supplies gas to a chamber, ionizes the gas, and applies the ion beam to a sample. The ion beam apparatus includes an emitter electrode having a needle-like extremity; a chamber inside which the emitter electrode is installed; a gas supply unit that supplies the gas to the chamber; a cooling unit that is connected to the chamber and cools the emitter electrode; a discharge type exhaust unit that exhausts gas inside the chamber; and a trap type exhaust unit that exhausts gas inside the chamber. The exhaust conductance of the discharge type exhaust unit is larger than the total exhaust conductance of the trap type exhaust unit.

Embodiments of deposition rings for use in a process chamber are provided herein. In some embodiments, a deposition ring includes: an annular body; an inner wall extending upward from an inner portion of the annular body; and an outer wall extending upward form an outer portion of the annular body to define a large deposition cavity between the inner wall and the outer wall, wherein a width of the large deposition cavity is about 0.35 inches to about 0.60 inches, wherein the outer wall includes an outer ledge and an inner ledge raised with respect to the outer ledge.

An apparatus may include an electrostatic filter having a plurality of electrodes; a voltage supply assembly coupled to the plurality of electrodes; a cleaning ion source disposed between the electrostatic filter and a substrate position, the cleaning ion source generating a plasma during a cleaning mode, wherein a dose of ions exit the cleaning ion source; and a controller having a first component to generate a control signal for controlling the voltage supply assembly, wherein a negative voltage is applied to at least one of the plurality of electrodes when the plasma is generated.

A specimen preparation device prepares a cross section of a specimen by applying an ion beam, the specimen preparation device including: an ion beam generator that generates the ion beam; a specimen holder that holds the specimen; a shield plate that shields part of the specimen from the ion beam; and a tilted plate that is placed to intersect a path of the ion beam on a downstream side of the specimen, and has an incidence surface that is tilted relative to a direction in which the ion beam is incident.

Disclosed herein is a composite charged particle beam apparatus including a focused ion beam column and an electron beam column, the apparatus preventing the electron beam column from being contaminated so as to emit an electron beam with high precision. The apparatus includes: a sample tray on which a sample is placed; a focused ion beam column irradiating the sample by using a focused ion beam; an electron beam column irradiating the sample by using an electron beam; a sample chamber receiving the sample tray, and the columns therein; an anti-contamination plate moving between an inserted position inserted into a space between a beam emission surface of the electron beam column and the sample tray, and an open position withdrawn from the space between the beam emission surface and the sample tray; and an operation unit operating the anti-contamination plate to move between the positions.