A method and apparatus for dosage measurement and monitoring in an ion implantation system is disclosed. In one embodiment, a transferring system, includes: a vacuum chamber, wherein the vacuum chamber is coupled to a processing chamber; a shaft coupled to a ball screw, wherein the ball screw and the shaft are configured in the vacuum chamber; and a vacuum rotary feedthrough, wherein the vacuum rotary feedthrough comprises a magnetic fluid seal so as to provide a high vacuum sealing, and wherein the vacuum rotary feedthrough is configured through a first end of the vacuum chamber and coupled to the ball screw so as to provide a rotary motion on the ball screw.

An apparatus may include an RF power assembly, arranged to output an RF signal, and a drift tube assembly, arranged to transmit an ion beam, and coupled to the RF power assembly. The drift tube assembly may include a first ground electrode; an AC drift tube assembly, disposed downstream of the first ground electrode; and a second ground electrode, disposed downstream of the AC drift tube assembly, where the AC drift tube assembly comprises at least one variable length AC drift tube.

An ion source with a target holder for holding a solid dopant material is disclosed. The ion source comprises a thermocouple disposed proximate the target holder to monitor the temperature of the solid dopant material. In certain embodiments, a controller uses this temperature information to vary one or more parameters of the ion source, such as arc voltage, cathode bias voltage, extracted beam current, or the position of the target holder within the arc chamber. Various embodiments showing the connections between the controller and the thermocouple are shown. Further, embodiments showing various placement of the thermocouple on the target holder are also presented.

The present invention relates to a hybrid chamber, and more specifically, to a hybrid chamber capable of performing both a gas phase etching (GPE) process for removing oxide from a substrate and a radical dry cleaning (RDC) process for removing nitride from the substrate in one chamber.

Disclosed herein is an electron-optical assembly for an electron-optical column for projecting a charged particle beam along a beam path towards a target, the electron-optical assembly comprising: electromagnetic shielding surrounding the charged particle beam path and configured to shield the charged particle beam from an electromagnetic field external to the electromagnetic shielding; wherein the electromagnetic shielding comprises a plurality of sections extending along different positions along the beam path, each section surrounding the charged particle beam, wherein the sections are separable.

The disclosure provides a substrate processing apparatus including an electrostatic chuck disposed on a base to support a substrate, a focus ring disposed on the base to surround an outer circumference of the electrostatic chuck, and a lift pin configured to lift the focus ring, wherein the focus ring includes a lower ring and an upper ring disposed on the lower ring, the upper ring and/or the lower ring are configured to be simultaneously lifted according to a height of the lift pin, the lower ring includes an insertion groove, the upper ring includes a main body unit, a first protrusion extending downward from the main body unit and inserted into the insertion groove of the lower ring, and a second protrusion extending downward from the main body unit, contacting an outer circumference of the lower ring, and directly contacting the lift pin.

A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.

A semiconductor wafer includes a first surface and an implantation area adjacent to the first surface and a certain distance away from the first surface, the implantation area including implanted particles and defects. A defect concentration in the implantation area deviates by less than 5% from a maximum defect concentration in the implantation area.

Disclosed herein are techniques directed toward a protective shutter for a charged particle microscope. An example apparatus at least includes a charged particle column and a focused ion beam (FIB) column, a gas injection nozzle coupled to a translation device, the translation device configured to insert the gas injection nozzle in close proximity to a stage, and a shutter coupled to the gas injection nozzle and arranged to be disposed between the sample and the SEM column when the gas injection nozzle is inserted in close proximity to the stage.

A pole piece for a transmission electron microscope, the pole piece comprising an upper pole piece, containing a first pathway for an electron beam, a lower pole piece which is coupled to the upper pole piece and which contains a second pathway operatively connected to the first pathway, the upper pole piece and lower pole piece being separated by a gap between the first pathway and the second pathway. The pole piece has a mechanism which can extend or reduce the distance between the upper pole piece and the lower pole piece by changing the distance between the first pathway and the second pathway.