An ion milling apparatus has: a sample holder including a shield member for shielding the sample except for a portion to be milled; and a sample locking member cooperating with the shield member such that the sample is sandwiched and held therebetween. The shield member has an edge portion that determines a milling position on or in the sample. The sample locking member is disposed downstream of the edge portion in the direction of irradiation by the ion beam and has a support portion cooperating with the edge portion to support the milled portion therebetween. The support portion has a first surface making contact with the sample and a second surface making a given angle to the first surface. The given angle is equal to or less than 90°.

Various embodiments herein relate to carriers for supporting one or more substrate as the substrates are passed through a processing apparatus. In many cases, the substrates are oriented in a vertical manner The carrier may include a frame and vertical support bars that secure the glass to the frame. The carrier may lack horizontal support bars. The carrier may allow for thermal expansion and contraction of the substrates, without any need to provide precise gaps between adjacent pairs of substrates. The carriers described herein substantially reduce the risk of breaking the processing apparatus and substrates, thereby achieving a more efficient process. Certain embodiments herein relate to methods of loading substrates onto a carrier.

This disclosure describes systems, methods, and apparatus for making and using a single-turn coil on a remote plasma source to reduce capacitive coupling between the coil and a plasma, and/or a laminated chamber wall including at least one conductive layer that reduces capacitive coupling between the coil and the plasma. Where a laminated chamber wall is used, the coil can either be a single or multi-turn coil. Additive processes can be used to fuse or bond the conductive layer(s) to lower layers (e.g., dielectric layers) as well as to fuse or bond a final layer (e.g., dielectric) to an outermost conductive layer. Further, a method is disclosed wherein a conductive layer within the lamination is biased during plasma ignition and then the bias is reduced after ignition.

The invention provides an ion milling device capable of cross-sectional milling on an all-solid-state battery while reducing an occurrence of a short circuit due to a redeposition film. The ion milling device includes a sample stage 5 on which a sample 8 is placed, an ion source 1 configured to emit an unfocused ion beam 4 toward the sample, a stage controller 6 configured to cause the sample stage to perform a swing operation centered on a swing axis S.sub.0 set to be orthogonal to an ion beam center B.sub.0 of the ion beam, and cause the sample stage to perform a sliding operation along a line of intersection between a plane (YZ plane) including the ion beam center and perpendicularly intersecting the swing axis and a sample placement surface of the sample stage, in which the stage controller causes, in a first mode operation, the sample stage to perform the swing operation and the ion source to emit the ion beam to mill the sample, and causes in a second mode operation, the sample stage to perform the sliding operation and the ion source to emit the ion beam to remove sputter particles adhered again to the sample in the first mode operation.

A TEM sample holder enables simultaneous cooling and RF irradiation of a sample. The sample is suspended in a hole that penetrates through a sample stage formed by a dielectric plate having a lower metallic ground layer and an upper metallic lead. The sample stage is supported by an evacuated hollow tube extending from a cryogenic chamber, such as a liquid nitrogen or helium Dewar. A coaxial conductor extends from an ambient connector through the cryogenic chamber and hollow tube to the sample stage, a center conductor and surrounding metallic shield thereof being in thermal and electrical communication with the metallic lead and metallic ground layer respectively of the sample stage, and the metallic shield being is in direct thermal communication with the cryogenic chamber. The coaxial conductor thereby enables simultaneous cooling and RF irradiation of the sample during TEM measurements. Embodiments include a temperature sensor and heater.

A charged particle inspection system may include a shielding plate having an aperture or more than one aperture, for example, to permit additional inspection by an additional instrument requiring a line of sight to the area of interest. A field shaping element, such as a window element or a raised rim, is placed at the aperture to prevent or reduce a component of an electric field.

A specimen machining device for machining a specimen by irradiating the specimen with an ion beam includes an ion source for irradiating the specimen with the ion beam, a specimen stage for holding the specimen, a camera for photographing the specimen, an information provision unit for providing information indicating an expected machining completion time, and a storage unit for storing past machining information. The information provision unit performs processing for calculating the expected machining completion time based on the past machining information, processing for acquiring an image photographed by the camera, processing for calculating a machining speed based on the acquired image, and processing for updating the expected machining completion time based on the machining speed.

A blanking aperture array unit according to the present embodiment includes a chip configured to control a charged particle beam by blanking control of switching whether to irradiate a target with the charged particle beam; a substrate having the chip mounted thereon; a wire configured to electrically connect pads on the chip to the substrate and transmit a control signal for the blanking control from the substrate to the chip through the pads; and a conductive covering member having a first end connected to the substrate and a second end located on the chip, the covering member being provided from the first end to the second end to cover the wire while maintaining electrical insulation from the wire, and at least two end sides of the second end of the covering member are nearer a central portion of the chip than locations of the pads on the chip.

Pallets for transporting one or more glass substrates in a substantially vertical orientation through a sputtering system. In some cases, a pallet comprising a frame with an aperture and an adjustable grid array within the aperture. The adjustable grid array is configurable to hold a plurality of glass substrates of different shapes and/or sizes. In one case, the adjustable grid array comprises a system of vertical and horizontal support bars, wherein the vertical support bars configured to both support the plurality of glass substrates at their vertical edges, wherein the horizontal support bars are configured to support the plurality of glass substrates at their horizontal edges, wherein the ends of the horizontal support bars are slideably engaged with the vertical support bars.

The present disclosure provides a feeding structure, an upper electrode assembly, and a physical vapor deposition chamber and device. In the present disclosure a RF power is fed through the center of a first introduction member of the feeding structure and is evenly distributed onto a target by a plurality of distribution members.