The present disclosure relates to methods and systems for forming a radical treated film on a surface of a substrate. More particularly, the disclosed methods and systems utilize radical treatment to treat a film which has been deposited on the surface of a substrate. The radical treatment takes place in a radical treatment chamber and the deposition takes place in a deposition chamber, wherein the chambers are operationally coupled to allow a substrate to be transferred between them without any air break.

There is provided an electron microscope capable of easily achieving power saving. The electron microscope (100) includes a controller (60) for switching the mode of operation of the microscope from a first mode where electron lenses (12, 14, 18, 20) are activated to a second mode where the electron lenses (12, 14, 18, 20) are not activated. During this operation for making a switch from the first mode to the second mode, the controller (60) performs the steps of: closing a first vacuum gate valve (50), opening a second vacuum gate valve (52), and vacuum pumping the interior of the electron optical column (2) of the microscope by the second vacuum pumping unit (40); then controlling a heating section (26) to heat an adsorptive member (242); then opening the first vacuum gate valve (50), closing the second vacuum gate valve (52), and vacuum pumping the interior of the electron optical column (2) by the first vacuum pumping unit (30); and turning off the electron lenses (12, 14, 18, 20).

Provided herein are approaches for controlling particle trajectory from a beam-line electrostatic element. In an exemplary approach, a beam-line electrostatic element is disposed along a beam-line of an electrostatic filter (EF), and a voltage is supplied to the beam-line electrostatic element to generate an electrostatic field surrounding the beam-line electrostatic element, agitating a layer of contamination particles formed on the beam-line electrostatic element. A trajectory of a set of particles from the layer of contamination particles is then modified to direct the set of particles to a desired location within the EF. In one approach, the trajectory is controlled by providing an additional electrode adjacent the beam-line electrostatic element, and supplying a voltage to the additional electrode to control a local electrostatic field in proximity to the beam-line electrostatic element. In another approach, the trajectory is influenced by one or more geometric features of the beam-line electrostatic element.

This disclosure provides systems, methods, and apparatus related to blocking macroparticles in deposition processes utilizing plasmas. In one aspect, an apparatus includes a cathode, a substrate holder, a first magnet, a second magnet, and a structure. The cathode is configured to generate a plasma. The substrate holder is configured to hold a substrate. The first magnet is disposed proximate a first side of the cathode. The second magnet is disposed proximate a second side of the substrate holder. A magnetic field exists between the first magnet and the second magnet and a flow of the plasma substantially follows the magnetic field. The structure is disposed between the second side of the cathode and the first side of the substrate holder and is positioned proximate a region where the magnetic field between the first magnet and the second magnet is weak.

Disclosed herein a light source apparatus that is capable of suppressing a light transmission rate of a debris trap to be lowered and a reflection rate in a light condenser mirror to be lowered. In the light source apparatus, a shielding member is provided having an aperture is provided in front of a stationary type foil trap to limit a solid angle of light emitted from a high temperature plasma. Furthermore, the stationary type foil trap is provided with a driving mechanism to allow the foil trap to be revolved such that an adhesion part of the debris of the foil trap is deviated from a position of the foil trap facing the aperture.

Provided herein are approaches for controlling particle trajectory from a beam-line electrostatic element. In an exemplary approach, a beam-line electrostatic element is disposed along a beam-line of an electrostatic filter (EF), and a voltage is supplied to the beam-line electrostatic element to generate an electrostatic field surrounding the beam-line electrostatic element, agitating a layer of contamination particles formed on the beam-line electrostatic element. A trajectory of a set of particles from the layer of contamination particles is then modified to direct the set of particles to a desired location within the EF. In one approach, the trajectory is controlled by providing an additional electrode adjacent the beam-line electrostatic element, and supplying a voltage to the additional electrode to control a local electrostatic field in proximity to the beam-line electrostatic element. In another approach, the trajectory is influenced by one or more geometric features of the beam-line electrostatic element.

There is provided an electron microscope capable of easily achieving power saving. The electron microscope (100) includes a controller (60) for switching the mode of operation of the microscope from a first mode where electron lenses (12, 14, 18, 20) are activated to a second mode where the electron lenses (12, 14, 18, 20) are not activated. During this operation for making a switch from the first mode to the second mode, the controller (60) performs the steps of: closing a first vacuum gate valve (50), opening a second vacuum gate valve (52), and vacuum pumping the interior of the electron optical column (2) of the microscope by the second vacuum pumping unit (40); then controlling a heating section (26) to heat an adsorptive member (242); then opening the first vacuum gate valve (50), closing the second vacuum gate valve (52), and vacuum pumping the interior of the electron optical column (2) by the first vacuum pumping unit (30); and turning off the electron lenses (12, 14, 18, 20).