A vapor deposition source that includes a substantially vertical plate to which first and second filament posts are coupled. The vapor deposition source also includes a filament having a first end and a second end. The filament provides a substantially concentric source of electrons. The first end of the filament is connected to the first filament post and the second end of the filament is connected to the second filament post. The first end of the filament is substantially vertically aligned with the second end of the filament when the filament is connected to the first and second posts.

The present disclosure relates to a process gas supplying unit configured to uniformly supply a process gas to each region of a substrate when a substrate is treated using plasma, and a substrate treating apparatus including the same. According to the present disclosure, the effect of improving the treating efficiency of the substrate may be obtained by uniformly supplying the process gas.

An electrode for manipulating an ion beam. The electrode may include an insert having an ion beam aperture to conduct the ion beam therethrough, the insert comprising a first electrically conductive material; a frame disposed around the insert and comprising a second electrically conductive material; and an outer portion, the outer portion disposed around the frame and comprising a third electrically conductive material, wherein the insert is reversibly detachable from the frame, and wherein the frame is reversibly attachable from the outer portion.

Electron beam spot characteristics can be tuned in each x-ray tube by moving a focusing-ring along a longitudinal-axis of the x-ray tube. The focusing-ring can then be immovably fastened to the x-ray tube.

An x-ray source can include an x-ray tube and a focusing-ring. The focusing-ring can at least partially encircle an electron-emitter, a cathode, an evacuated-enclosure, or combinations thereof. The focusing-ring can be located outside of a vacuum of the evacuated enclosure. The focusing-ring can adjust an electron-beam spot on a target material of the x-ray tube when moved along a longitudinal-axis extending linearly from the electron-emitter to the target material.

The extraction electrode has a pair of sub-assemblies that define a gap. Each sub-assembly has a suppression plate and ground plate secured together in spaced relation by pairs of insulating assemblies. A plate assembly extends perpendicularly from the ground plate. The gap between the subassemblies is set by tabs on a centering fixture extension.

A transmission-target x-ray tube can include an x-ray window 12 mounted on a window-housing 13. The window-housing 13 can be made of a high density material with a high atomic number, and can include an aperture 13.sub.a with an increasing-inner-diameter region 23 for blocking x-rays and electrons.

Provided are a multistage-connected multipole and a charged particle beam device that can be produced with precision in machining without requiring precision in brazing between a pole and an insulation material. This multi-stage connected multipole 100 comprises: a plurality of poles Q1-Q4 that are arranged along the optical-axis direction of a charged particle beam, and that have cutouts Non surfaces facing each other; and braces P1-P3 that are arranged between the plurality of poles Q1-Q4 and are made of an insulator. The poles Q1-Q4 and the braces P1-P3 are joined by fitting the braces P1-P3 into the cutouts N and applying brazing so as to be interposed by a bonding material.

The invention relates to charged particle beam generator comprising a charged particle source for generating a charged particle beam, a collimator system comprising a collimator structure with a plurality of collimator electrodes for collimating the charged particle beam, a beam source vacuum chamber comprising the charged particle source, and a generator vacuum chamber comprising the collimator structure and the beam source vacuum chamber within a vacuum, wherein the collimator system is positioned outside the beam source vacuum chamber. Each of the beam source vacuum chamber and the generator vacuum chamber may be provided with a vacuum pump.

A detecting method and a detecting equipment therefor are provided. The detecting method includes: inspecting whether a display panel has a defective position; after acquiring the defective position of the display panel by the inspecting, using a first focused ion beam generated by a first ion overhaul apparatus to cut the defective position of the display panel, so as to strip a defect at the defective position and observe morphology of defect; using a repair apparatus to perform a repair treatment on the defective position after the defect is stripped. An inspection apparatus for the inspecting of the defective position, the first ion overhaul apparatus and the repair apparatus are sequentially installed on the same production line.

This application relates to an apparatus, a system, and a method for impedance adjustment of a processing station. An apparatus for impedance adjustment of a single processing station may include: a heating plate including a first grounding grid and a second grounding grid, where the first grounding grid and the second grounding grid cover different areas of the heating plate; a first tuner connected to the first grounding grid and including a first adjustable capacitor and a first sensor for detecting a current; and a second tuner connected to the second grounding grid and including a second adjustable capacitor and a second sensor for detecting a current.