Disclosed herein are devices, systems, and methods for transporting a substrate for vacuum processing. The transport may be provided by a substrate carrying device that includes a support area by which a substrate carrier may be moveably supported. The substrate carrying device includes a plurality of electrodes that are galvanically separated from one another. The substrate carrying device includes a plurality of substrate carrying regions arranged consecutively in series with respect to one another, each substrate carrying region including an electrode of the plurality of electrodes and also including a substrate receiving device configured to receive a substrate placed in the substrate carrying region, preferably in physical contact with the electrode.

A plasma processing apparatus includes a process chamber in which a substrate processing process is performed; an electrostatic chuck having a microcavity; a lower electrode disposed to be in contact with a lower surface of the electrostatic chuck; a high-frequency power supply applying high-frequency power to the lower electrode; a conductive supporter disposed to be spaced apart from a lower portion of the lower electrode and grounded thereto; and a discharge suppressor located between the lower electrode and the conductive supporter, having a gas supply flow path forming a portion of a gas supply line, and molded by three dimensional printing, wherein the gas supply flow path has a space portion having a length of 5 mm or less in a direction of an electric field formed by the high-frequency power and connecting upper and lower surfaces of the discharge suppressor.

A thickness of a bonding material (8) is varied in a radial direction orthogonal to a central axis (P) of the tubular anode member (6), the bonding material (8) being used for bonding a transmitting substrate (7) for supporting a target layer (9) and a tubular anode member (6) in a direction along the central axis (P). Thus, a region in which a circumferential tensile stress of the bonding material (8) is alleviated is formed in the direction along the central axis (P) to prevent a crack from developing in the bonding material (8).

A cleaning method is provided. In the cleaning method, a cleaning gas is supplied into a processing chamber, a radio frequency (RF) power for plasma generation is applied to one of a first electrode on which a substrate is to be mounted and a second electrode disposed to be opposite to the first electrode in the processing chamber, and a negative voltage is applied to an edge ring disposed to surround the substrate. Further, plasma is generated from the cleaning gas and a cleaning process using the plasma is performed.

A height measuring device includes a light source that emits light in a direction oblique to a top surface of a specimen, a slit that shapes the light from the light source to form a slit image on the specimen, an imaging element that detects reflected light reflected by the specimen, and an arithmetic unit. The arithmetic unit: identifies a slit image of the reflected light reflected by the top surface of the specimen from among a plurality of slit images based on respective positions of the plurality of slit images on a detection surface of the imaging element; and determines the height of the top surface of the specimen based on the position of the slit image of the reflected light reflected by the top surface of the specimen on the detection surface.

An adjustment method for adjusting a path of an electron beam passing through an electron beam device including at least one unit having at least one lens and at least one aligner electrode, and a detector configured to detect the electron beam, the method including: a step of measuring, by a coordinate measuring machine, an assembly tolerance for each of a plurality of the units constituting the electron beam device; a step of determining a shift amount of the electron beam at a position of the at least one of the lenses; a step of determining an electrode condition for each of a plurality of the aligner electrodes included in the units in a manner such that a shift amount of the electron beam is to be the determined shift amount; and a step of setting each of the aligner electrodes to the corresponding determined electrode condition.

A charged particle device includes an electron emitting part for emitting electrons, an electron irradiated part configured to be irradiated with the electrons emitted from the electron emitting part, a container part configured to evacuate an interior thereof and contain the electron irradiated part in the interior thereof, an electric wire containing part configured to be inserted from an outside of the container part via an insertion part provided in the container part to contain an electric wire through which electricity is conducted to the electron irradiated part contained in the container part, and an insertion-part-side protrusion part configured to surround the electric wire containing part and protrude from a vicinity of the insertion part on an inner wall of the container part to an interior of the container part.

A cleaning method is provided. In the cleaning method, a cleaning gas is supplied into a processing chamber, a radio frequency (RF) power for plasma generation is applied to one of a first electrode on which a substrate is to be mounted and a second electrode disposed to be opposite to the first electrode in the processing chamber, and a negative voltage is applied to an edge ring disposed to surround the substrate. Further, plasma is generated from the cleaning gas and a cleaning process using the plasma is performed.

An ion generator includes: an arc chamber which defines a plasma generation space; a cathode which emits thermoelectrons toward the plasma generation space; and a repeller which faces the cathode with the plasma generation space interposed therebetween. The arc chamber includes a box-shaped main body on which a front side is open, and a slit member which is mounted to the front side of the main body and provided with a front slit for extracting ions. An inner surface of the main body which is exposed to the plasma generation space is made of a refractory metal material, and an inner surface of the slit member which is exposed to the plasma generation space is made of graphite.

A collimated electron beam is illuminated to a grounded metal mask such that patterns on the mask can be transferred to a substrate identically. In a preferred embodiment, a linear electron source can be provided for enhancing lithographic throughput. The metal mask is adjacent to the substrate, but does not contact with substrate.