In one embodiment, an ion implantation apparatus includes an ion source configured to generate an ion beam. The apparatus further includes a scanner configured to change an irradiation position with the ion beam on an irradiation target. The apparatus further includes a first electrode configured to accelerate an ion in the ion beam. The apparatus further includes a controller configured to change at least any of energy and an irradiation angle of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source.

An insulator that has a lattice is disclosed. The insulator may have a shaft with two ends. The lattice may be disposed on the outer surface of the shaft. In some embodiments, one or more sheaths are used to cover portions of the shaft. A lattice may also be disposed on the inner wall and/or outer walls of the sheaths. The lattice serves to increase the tracking length between the two ends of the shaft. This results in longer times before failure. This insulator may be used in an ion implantation system to physically and electrically separate two components.

A multi-column scanning electron microscopy (SEM) system is disclosed. The SEM system includes a source assembly. The source assembly includes two or more electron beam sources configured to generate a plurality of electron beams. The source assembly also includes two or more sets of positioners configured to actuate the two or more electron beam sources. The SEM system also includes a column assembly. The column assembly includes a plurality of substrate arrays. The column assembly also includes two or more electron-optical columns formed by a set of column electron-optical elements bonded to the plurality of substrate arrays. The SEM system also includes a stage configured to secure a sample that at least one of emits or scatters electrons in response to the plurality of electron beams directed by the two or more electron-optical columns to the sample.

A system and method for varying the temperature of a faceplate for an ion source is disclosed. The faceplate is held against the chamber walls of the ion source by a plurality of fasteners. These fasteners may include tension springs or compression springs. By changing the length of the tension spring or compression spring when under load, the spring force of the spring can be increased. This increased spring force increases the compressive force between the faceplate and the chamber walls, creating improved thermal conductivity. In certain embodiments, the length of the spring is regulated by an electronic length adjuster. This electronic length adjuster is in communication with a controller that outputs an electrical signal indicative of the desired length of the spring. Various mechanisms for adjusting the length of the spring are disclosed.

A system and method for varying the temperature of a faceplate for an ion source is disclosed. The faceplate is held against the chamber walls of the ion source by a plurality of fasteners. These fasteners may include tension springs or compression springs. By changing the length of the tension spring or compression spring when under load, the spring force of the spring can be increased. This increased spring force increases the compressive force between the faceplate and the chamber walls, creating improved thermal conductivity. In certain embodiments, the length of the spring is regulated by an electronic length adjuster. This electronic length adjuster is in communication with a controller that outputs an electrical signal indicative of the desired length of the spring. Various mechanisms for adjusting the length of the spring are disclosed.

The present disclosure provides an electrode fixing assembly and a dry etching device. The electrode fixing assembly includes a first fixing element and a second fixing element, wherein a hardness of a material of the first fixing element is greater than a hardness of a material of the second fixing element. The electrode fixing assembly is configured to be arranged in the dry etching device to fix an upper electrode on a device body, a generation of particles is reduced or eliminated, and then problems such as poor etching or the like caused by a substrate to be etched covered by the particles are avoided.

Provided is a plasma processing apparatus for controlling a distribution of plasma at an edge region of a chamber during a plasma process, thereby reliably performing the plasma process on a semiconductor substrate. The plasma processing apparatus includes a chamber including an outer wall defining a reaction space and a window covering an upper portion of the outer wall; a coil antenna positioned above the window and including at least two coils; and an electrostatic chuck (ESC) positioned in a lower portion of the chamber, wherein an electrode is located inside the ESC, wherein the electrode includes a first electrode for chucking and at least one second electrode, the at least one second electrode provided at an edge of the inside of the ESC so as to have a tilt with respect to the top surface of the ESC.

An extraction electrode arm includes first and second ends spaced apart along a longitudinal axis and first and second sides spaced apart along a lateral axis. The arm also includes first and second surfaces apart, extending longitudinally between the first and second ends and laterally between the first and second sides. The arm further includes a base portion extending from the first end toward the second end and extending between the first and second sides, an end portion longitudinally spaced apart from the base portion and extending to the second end, and a diagonal shank portion extending between the base portion and the end portion and extending laterally from a first diagonal surface region on the first side to a second diagonal surface region on the second side. The diagonal shank portion has a shank thickness that extends laterally between the first and second diagonal surface regions.

In one embodiment, an ion implantation apparatus includes an ion source configured to generate an ion beam. The apparatus further includes a scanner configured to change an irradiation position with the ion beam on an irradiation target. The apparatus further includes a first electrode configured to accelerate an ion in the ion beam. The apparatus further includes a controller configured to change at least any of energy and an irradiation angle of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source.

The indirectly heated cathode ion source assembly employs a cathode cup unit and filament arrangement wherein the filament has a flat face spaced from a tungsten disc-shaped body and is disposed in a space that is surrounded by a thermal barrier to reduce thermal losses. The thermal barrier is formed by a plurality of concentric foils that are closely spaced.