Disclosed herein is an apparatus comprising: a first electrically conductive layer; a second electrically conductive layer; a plurality of optics element s between the first electrically conductive layer and the second electrically conductive layer, wherein the plurality of optics elements are configured to influence a plurality of beams of charged particles; a third electrically conductive layer between the first electrically conductive layer and the second electrically conductive layer; and an electrically insulating layer physically connected to the optics elements, wherein the electrically insulating layer is configured to electrically insulate the optics elements from the first electrically conductive layer, and the second electrically conductive layer.

Disclosed herein is an apparatus comprising: a first electrically conductive layer; a second electrically conductive layer; a plurality of optics element s between the first electrically conductive layer and the second electrically conductive layer, wherein the plurality of optics elements are configured to influence a plurality of beams of charged particles; a third electrically conductive layer between the first electrically conductive layer and the second electrically conductive layer; and an electrically insulating layer physically connected to the optics elements, wherein the electrically insulating layer is configured to electrically insulate the optics elements from the first electrically conductive layer, and the second electrically conductive layer.

The present disclosure describes an ion implantation system that includes a bushing designed to reduce the accumulation of IMP by-produces on the bushing's inner surfaces. The ion implantation system can include a chamber, an ion source configured to generate an ion beam, and a bushing coupling the ion source and the chamber. The bushing can include (i) a tubular body having an inner surface, a first end, and a second end and (ii) multiple angled trenches disposed within the inner surface of the tubular body, where each of the multiple angled trenches extends towards the second end of the tubular body.

The present invention provides an electron microscope and an observation method capable of observing secondary electrons in the atmosphere. In detail, a charged particle microscope of the invention includes: a partition wall that separates a non-vacuum space in which a sample is loaded from a vacuum space inside a charged particle optical lens barrel; an upper electrode; a lower electrode on which the sample is loaded; a power supply for applying a voltage to at least one of the upper electrode and the lower electrode; a sample gap adjusting mechanism for adjusting a gap between the sample and the partition wall; and an image forming unit for forming an image of the sample based on the current absorbed by the lower electrode. The secondary electrons are selectively measured by using an amplification effect due to ionization collision between electrons and gas molecules generated when a voltage is applied between the upper electrode and the lower electrode. As a detection method, a method is used which measures a current value flowing in a substrate.

Embodiments of systems, devices, and methods relate to an electrode standoff isolator. An example electrode standoff isolator includes a plurality of adjacent insulative segments positioned between a proximal end and a distal end of the electrode standoff isolator. A geometry of the adjacent insulative is configured to guard a surface area of the electrode standoff isolator against deposition of a conductive layer of gaseous phase materials from a filament of an ion source.

A corona/plasma treatment machine includes an array of electrodes arranged in a helix along a conductive central cylinder, allowing for the efficient surface treatment of materials with greater cross-sectional heights and widths than what is conventionally possible. The corona/plasma treatment machine further includes of a high frequency, high voltage power source, a dielectric, and a contact plate. The array of electrodes is driven using a motor and rotates about its longitudinal axis and is electrically isolated from its surroundings. When power is supplied to the electrode array, electrical energy is discharged from the tips of the electrodes near the contact plate and creates a plasma corona aura formed from the ionization of the surrounding air between the electrode array and the contact plate. A conveyor is positioned below the electrode array and configured to feed material through the plasma corona aura.

Provided is a substrate processing apparatus including a chamber having a processing space for processing a substrate with plasma, a substrate support for supporting the substrate in the chamber, and an insulation plate disposed under the substrate support to electrically insulate the substrate support from the chamber, wherein the insulation plate includes a base material body made of a ceramic material having a first dielectric constant, and a dielectric constant controller dispersed in the base material body and having a second dielectric constant different from the first dielectric constant to prevent loss of radio-frequency (RF) bias power applied to the substrate support to control ion energy in the plasma.

A substrate treating apparatus includes a chamber having a process space therein, a substrate support unit that supports a substrate in the process space, a gas supply unit that supplies gas into the process space, and a plasma generation unit that generates plasma from the gas, wherein the substrate support unit includes a substrate support part that supports the substrate, a focus ring that surrounds the substrate support part, an insulator located below the focus ring and having a groove formed therein, an electrode provided in the groove formed in the insulator, and an impedance controller that is connected with the electrode and that adjusts impedance of the electrode, and the impedance controller includes a resonance control circuit that adjusts a maximum value of current applied to the electrode and an impedance control circuit that controls an incidence angle of plasma ions in an edge region of the substrate.

Aberration corrector includes a lower electrode substrate to be formed therein with plural first passage holes having a first hole diameter and making multiple electron beams pass therethrough, and to be arranged thereon plural electrode sets each being plural electrodes of four or more poles, surrounding a first passage hole, for each of the plural first passage holes, and an upper electrode substrate above the lower one, to be formed therein with plural second passage holes making multiple electron beams pass therethrough, whose size from the top of the upper electrode substrate to the middle of way to the back side of the upper electrode substrate is a second hole diameter, and whose size from the middle to the back side is a third hole diameter larger than each of the first and second hole diameters, wherein a shield electrode is on inner walls of plural second passage holes.

The present disclosure describes an ion implantation system that includes a bushing designed to reduce the accumulation of IMP by-produces on the bushing's inner surfaces. The ion implantation system can include a chamber, an ion source configured to generate an ion beam, and a bushing coupling the ion source and the chamber. The bushing can include (i) a tubular body having an inner surface, a first end, and a second end and (ii) multiple angled trenches disposed within the inner surface of the tubular body, where each of the multiple angled trenches extends towards the second end of the tubular body.