A liquid processing apparatus includes a container for holding liquid, a first electrode, a second electrode, a first insulator that has a cylindrical shape and at least partly surrounds a side face of the first electrode via a space, the first insulator having an opening in an end face of the first insulator, a gas supply device that supplies gas into the space and releases the gas into the liquid via the opening, a power source that applies a voltage between the first electrode and the second electrode and generates plasma, and a metallic member that partly surrounds the side face of the first electrode via the space. The metallic member is electrically connected to the first electrode. At least a part of the first insulator is disposed between the first electrode and the metallic member.

An insulator that has a lattice is disclosed. The insulator may have a shaft with two ends. The lattice may be disposed on the outer surface of the shaft. In some embodiments, one or more sheaths are used to cover portions of the shaft. A lattice may also be disposed on the inner wall and/or outer walls of the sheaths. The lattice serves to increase the tracking length between the two ends of the shaft. This results in longer times before failure. This insulator may be used in an ion implantation system to physically and electrically separate two components.

A plasma processing apparatus includes a plasma processing chamber; a substrate support; a lower electrode; an RF power supply; and an upper electrode assembly. The upper electrode assembly includes a gas diffusion plate; an insulating plate; and an upper electrode plate arranged between the gas diffusion plate and the insulating plate, and having a plurality of first through holes and a plurality of second through holes. The insulating plate includes an inner annular protrusion and an outer annular protrusion protruding downward from a lower surface of the insulating plate, and the insulating plate has a plurality of first gas introduction holes, a plurality of second gas introduction holes, and a plurality of third gas introduction holes.

An insulator for an ion implantation source may provide electrical insulation between high voltage components and relatively lower voltage components of the ion implantation source. To reduce the likelihood of and/or prevent a leakage path forming along the insulator, the insulator may include an internal cavity having a back and forth pattern. The back and forth pattern of the internal cavity increases the mean free path of gas molecules in the ion implantation source and increases the surface area of the insulator that is not directly or outwardly exposed to the gas molecules. This results in a continuous film or coating being more difficult and/or less likely to form along the insulator, which extends the working time of the ion implantation source.

An electron beam irradiation device (1) irradiates an electron beam from an electrode (12) that is connected to a tip of a conductive part (21) which projects inside a vacuum container (11), to the exterior of the vacuum container (11) via a metal foil (111) that constitutes a portion of a peripheral wall of the vacuum container (11). The electron beam irradiation device (1) includes a tubular insulator (22) that surrounds the periphery of the conductive part (21) in the vacuum container (11), and an amorphous carbon film (23) that covers the outer peripheral surface of the insulator (22).

A substrate processing apparatus includes: a protrusion portion formed by a side peripheral wall of a processing container which swells outward, and configured to form a vertically elongated space communicating with a processing space for accommodating a substrate holder and performing a process; a gas discharge portion provided in the vertically elongated space, and configured to discharge a process gas into the processing space; an antenna provided in the protrusion portion along a vertical direction and supplied with a high-frequency power for converting the process gas into a plasma in the vertically elongated space; and a shield extending leftward and rightward in the protrusion portion at positions closer to the processing space than the antenna and configured to shield an electric field formed by the antenna and to suppress a formation of the plasma in the processing space.

Provided are a structure for particle acceleration and a charged particle beam apparatus, which enable the suppression of electric field concentration occurring near a negative electrode part. The structure for particle acceleration includes: a ceramic body 1 having a through hole 10 formed by an inner wall surface; and a negative electrode 2 and a positive electrode 3 which are arranged, respectively, on one end and the other end of the through hole 10 in the ceramic body. The inner wall surface of the ceramic body 1 is configured such that a first region 22, which is electrically connected with the negative electrode 2, and a second region 23, which is electrically connected with the positive electrode 3, are electrically connected to each other. The surface resistivity of the first region 22 is lower than the surface resistivity of the second region 23.

A system for extending the life of insulating components disposed within a housing, such as an ion implanter, is disclosed. The system includes one or more insulating components, disposed in the housing, which are coated with a diamond like carbon (DLC) coating. The insulating components may be bushings or any insulating component used to electrically isolate two components having different voltage potentials, such as electrodes. This DLC coating retards the deposition of metals, such as those contained in the ion source, on the insulating components. This reduces the likelihood or electrical arcing or other phenomenon that affect the useful life of these insulating component.

A plasma source is provided. The plasma source includes a chamber body, a supply passage, a vacuum connector, an antenna, a first insulator, a second insulator, and a conductor. The chamber body has an opening for emitting ions or electrons. The supply passage penetrates through a first peripheral wall of the chamber body. The vacuum connector is provided in a second peripheral wall of the chamber body at a position opposed to the opening. The antenna has a base end connected to the vacuum connector, and extends inside the chamber body toward the opening. The first insulator covers a first region of the antenna at a distal end of the antenna inside the chamber body. The second insulator covers a second region of the antenna at the base end of the antenna inside the chamber body. The conductor covers the second insulator.

A plasma source is provided. The plasma source includes a chamber body, a supply passage, a vacuum connector, an antenna, a first insulator, a second insulator, and a conductor. The chamber body has an opening for emitting ions or electrons. The supply passage penetrates through a first peripheral wall of the chamber body. The vacuum connector is provided in a second peripheral wall of the chamber body at a position opposed to the opening. The antenna has a base end connected to the vacuum connector, and extends inside the chamber body toward the opening. The first insulator covers a first region of the antenna at a distal end of the antenna inside the chamber body. The second insulator covers a second region of the antenna at the base end of the antenna inside the chamber body. The conductor covers the second insulator.