A beam blanking device for a multi-beamlet charged particle beam apparatus is provided. The beam blanking device includes a first blanking unit, a second blanking unit and a third blanking unit. The first blanking unit includes a first blanking electrode and a first aperture. The second blanking unit includes a second blanking electrode and a second aperture. The third blanking unit includes a third blanking electrode and a third aperture. The beam blanking device includes a common electrode forming a first counter electrode for the first blanking electrode, a second counter electrode for the second blanking electrode and a third counter electrode for the third blanking electrode. The first blanking unit, the second blanking unit and the third blanking unit are arranged in a planar array and define a plane of the planar array. The first blanking electrode is arranged for generating a first electric field between the first blanking electrode and the common electrode in the first aperture for deflecting a first beamlet of the multi-beamlet charged particle beam apparatus into a first deflection direction. The second blanking electrode is arranged for generating a second electric field between the second blanking electrode and the common electrode in the second aperture for deflecting a second beamlet of the multi-beamlet charged particle beam apparatus into a second deflection direction. The third blanking electrode is arranged for generating a third electric field between the third blanking electrode and the common electrode in the third aperture for deflecting a third beamlet of the multi-beamlet charged particle beam apparatus into a third deflection direction. A dividing plane intersecting the planar array separates the first blanking unit from the second blanking unit and the third blanking unit, wherein the first deflection direction, the second deflection direction and the third deflection direction point away from the dividing plane.

Disclosed herein are radio frequency (RF) cavities and systems including such RF cavities. The RF cavities are characterized as having an insert with at least one sidewall coated with a material to prevent charge build up without affecting RF input power and that is heat and vacuum compatible. One example RF cavity includes a dielectric insert, the dielectric insert having an opening extending from one side of the dielectric insert to another to form a via, and a coating layer disposed on an inner surface of the dielectric insert, the inner surface facing the via, wherein the coating layer has a thickness and a resistivity, the thickness less than a thickness threshold, and the resistivity greater than a resistivity threshold, wherein the thickness and resistivity thresholds are based partly on operating parameters of the RF cavity.

Charged particle beams (CPBs) are modulated using a beam blanker/deflector and an electrically pulsed extraction electrode in conjunction with a field emitter and a gun lens. With such modulation, CPBs can provide both pulsed and continuous mode operation as required for a particular application, while average CPB current is maintained within predetermined levels, such as levels that promote X-ray safe operation. Either the extraction electrode or the beam blanker/deflector can define CPB pulse width, CPB on/off ratio, or both.

In one embodiment, a data processing method is for processing data in a writing apparatus performing multiple writing by using multiple beams. The data is for controlling an irradiation amount for each beam. The method includes generating irradiation amount data for each of a plurality of layers, the irradiation amount data defining an irradiation amount for each of a plurality of irradiation position, and the plurality of layers corresponding to writing paths in multiple writing, performing a correction process on the irradiation amounts defined in the irradiation amount data provided for each layer, calculating a sum of the irradiation amounts for the respective irradiation positions defined in the corrected irradiation amount data, comparing the sums between the plurality of layers, and determining whether or not an error has occurred in the correction process based on the comparison result.

To provide a charged particle beam device which enables observation and evaluation of the surface and the inside of a sample with low damage to the sample, the charged particle beam device has: a charged particle beam source 2; a sample table 9 in which the sample 210 is placed; a charged particle beam optical system which pulsates a charged particle beam 100 and irradiates the charged particle beam to the sample at an acceleration voltage within a range of 0 kV to 5 kV; a split distance selector 125 for selecting a measurement object of the sample; and a split distance setting unit 124 for setting a split distance in one line scanning of the charged particle beam on the sample.

Continuous and automatic acquisition of electron beam holograms is made possible by using a sample holding mechanism that includes a sample end region that has a linear shape that is suited for electron beam holography, separates a thin-film rectangular window with an extreme-thin support film that supports a sample being disposed and a rectangular hole that has a linear-shaped edge and through which a reference wave is transmitted from each other, and configures a part of a layer that is thicker than the support film.

An apparatus may include a first grounded drift tube, arranged to accept a continuous ion beam, at least two AC drift tubes, arranged in series, downstream to the first grounded drift tube, and a second grounded drift tube, downstream to the at least two AC drift tubes. The apparatus may include an AC voltage assembly, electrically coupled to at least two AC drift tubes. The AC voltage assembly may include a first AC voltage source, coupled to deliver a first AC voltage signal at a first frequency to a first AC drift tube of at least two AC drift tubes. The AC voltage assembly may further include a second AC voltage source, coupled to deliver a second AC voltage signal at a second frequency to a second AC drift tube of the at least two AC drift tubes, wherein the second frequency comprises an integral multiple of the first frequency.

In one embodiment, a multi charged particle beam writing apparatus includes a plurality of reflective marks disposed on a stage, an inspection aperture member configured to allow one beam to pass therethrough, a first detector detecting a beam current of a beam passed through the inspection aperture member, a second detector detecting charged particles reflected from the reflective marks, a first beam shape calculator generating a beam image based on the beam currents detected by the first detector and calculating a reference beam shape, and a second beam shape calculator calculating a beam shape based on changes in intensity of the reflected charged particles and a position of the stage. The reference beam shape is calculated before writing. During writing, the beam shape based on reflected charged particles is calculated, and variation of the beam shape is added to the reference beam shape.

An ion implantation system, including an ion source, and a buncher to receive a continuous ion beam from the ion source, and output a bunched ion beam. The buncher may include a drift tube assembly, having an alternating sequence of grounded drift tubes and AC drift tubes. The drift tube assembly may include a first grounded drift tube, arranged to accept a continuous ion beam, at least two AC drift tubes downstream to the first grounded drift tube, a second grounded drift tube, downstream to the at least two AC drift tubes. The ion implantation system may include an AC voltage assembly, coupled to the at least two AC drift tubes, and comprising at least two AC voltage sources, separately coupled to the at least two AC drift tubes. The ion implantation system may include a linear accelerator, comprising a plurality of acceleration stages, disposed downstream of the buncher.

Methods and systems for examining a dynamic specimen using a Transmission Charged Particle Microscope are disclosed. An example method includes sparsifying a beam of charged particles to produce at detector an image of a sample comprising a distribution of sub-images that are mutually isolated from one another at least along an elected scan path, and using a scanning assembly to cause relative motion of said image and said detector along said scan path during a time interval t so as to smear out each sub-image into a detection streak on said detector, each such streak capturing temporal evolution of its associated sub-image during said time interval t.