A method of producing an implantation ion energy filter, suitable for processing a power semiconductor device. In one example, the method includes creating a preform having a first structure; providing an energy filter body material; and structuring the energy filter body material by using the preform, thereby establishing an energy filter body having a second structure.

In one embodiment, an ion implantation apparatus includes an ion source configured to generate an ion beam. The apparatus further includes a scanner configured to change an irradiation position with the ion beam on an irradiation target. The apparatus further includes a first electrode configured to accelerate an ion in the ion beam. The apparatus further includes a controller configured to change at least any of energy and an irradiation angle of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source.

A method of producing an implantation ion energy filter, suitable for processing a power semiconductor device. In one example, the method includes creating a preform having a first structure; providing an energy filter body material; and structuring the energy filter body material by using the preform, thereby establishing an energy filter body having a second structure.

A charged particles beam column for inspecting a sample in a sample plane is presented. The charged particles beam column comprises: a charged particles source generating a charged particles beam propagating along a general propagation path towards the sample plane; and at least one charged particles beam shaping unit. The charged particles shaping unit comprises at least one high-frequency electromagnetic radiation generator located in a vicinity of said general propagation path of the charged particles beam and controllably operated to perform synchronized generation of said high-frequency electromagnetic radiation towards at least one interaction region in said general propagation path, to cause interaction between said radiation and the charged particles, thereby directly affecting energy properties of the charged particles passing through said at least one interaction region in the general propagation path and directly affecting spectral resolution of the charged particles beam at said sample plane.

The present invention provides a charged particle beam device capable of predicting the three-dimensional structure of a sample, without affecting the charge of the sample. The present invention provides a charged particle beam device characterized in that a first distance between the peak and the bottom of a first signal waveform obtained on the basis of irradiation with a charged particle beam having a first landing energy, and a second distance between the peak and the bottom of a second signal waveform obtained on the basis of irradiation with a charged particle beam having a second landing energy different from the first landing energy are obtained, and the distance between the peak and the bottom at a landing energy (zero, for instance) different from the first and second landing energies is obtained on the basis of the extrapolation of the first distance and the second distance.

An implantation device, an implantation system and a method. The implantation device comprises a filter frame and a filter held by the filter frame, wherein said filter is designed to be irradiated by an ion beam.

A method of producing an implantation ion energy filter, suitable for processing a power semiconductor device. In one example, the method includes creating a preform having a first structure; providing an energy filter body material; and structuring the energy filter body material by using the preform, thereby establishing an energy filter body having a second structure.

In one embodiment, an ion implantation apparatus includes an ion source configured to generate an ion beam. The apparatus further includes a scanner configured to change an irradiation position with the ion beam on an irradiation target. The apparatus further includes a first electrode configured to accelerate an ion in the ion beam. The apparatus further includes a controller configured to change at least any of energy and an irradiation angle of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source.

A charged particle beam system comprises a particle beam source having a particle emitter at a first voltage, a first electrode downstream of the particle beam source at a second voltage, a multi-aperture plate downstream of the first electrode, a second electrode downstream of the multi-aperture plate at a third voltage, a third electrode downstream of the second electrode at a fourth voltage, a deflector downstream of the third electrode, an objective lens downstream of the deflector, a fourth electrode downstream of the deflector at a fifth voltage; and an object mount at a sixth voltage. Voltage differences between the first, second, third, fourth and fifth voltages have same and opposite signs.

An ion implantation method includes changing an ion acceleration energy and/or an ion beam current density of an ion beam while effecting a relative movement between a semiconductor substrate and the ion beam impinging on a surface of the semiconductor substrate.