A charged particle beam device for inspecting a specimen is described. The charged particle beam device includes a beam source for emitting a charged particle beam, an electrode for influencing the charged particle beam, and a damping unit provided on the electrode for damping vibrations of the electrode. Further, an objective lens module with an electrode is described, wherein a damping unit is provided on the electrode. Further, an electrode device is described, wherein a mass damper is mounted on a disk-shaped electrode body of the electrode device.

A miller, a non-transitory computer-readable medium, and a method for milling a multi-layered object. The method may include milling each structural element of an array of structural elements that are spaced apart from each other by gaps to provide the milled structural elements, wherein each milled structural element has a flat upper surface, wherein prior the milling each one of the structural elements of the array has a flat upper surface of a certain width, wherein the certain width is of a nanometric scale. The milling of each structural element of the array may include scanning a defocused ion beam of the certain width along a longitudinal axis of the structural element. A current intensity of the defocused ion beam decreases with a distance from a middle of the defocused ion beam.

A process for the preparation and imaging of a sample of rock from an oil and gas reservoir is provided. A sample of reservoir rock may be obtained, such as from a core sample obtained using a core sampling tool inserted in a wellbore extending into an oil and gas reservoir. A photoresist may be deposited on the surface of reservoir rock sample to form a homogenous layer. The photoresist-coated surface of the reservoir rock sample may be imaged using a focused ion beam (FIB). The photoresist protects the pores and other surface features of the rock from damage or implantation by the FIB ion beam and thus minimizes the curtain effect in the resulting images.

A focused ion beam apparatus (100) includes: a focused ion beam lens column (20); a sample table (51); a sample stage (50); a memory (6M) configured to store in advance three-dimensional data on the sample table and an irradiation axis of the focused ion beam, the three-dimensional data being associated with stage coordinates of the sample stage; a display (7); and a display controller (6A) configured to cause the display to display a virtual positional relationship between the sample table (51v) and the irradiation axis (20Av) of the focused ion beam, which is exhibited when the sample stage is operated to move the sample table to a predetermined position, based on the three-dimensional data on the sample table and the irradiation axis of the focused ion beam.

A miller, a non-transitory computer-readable medium, and a method for milling a multi-layered object. The method may include milling each structural element of an array of structural elements that are spaced apart from each other by gaps to provide the milled structural elements, wherein each milled structural element has a flat upper surface, wherein prior the milling each one of the structural elements of the array has a flat upper surface of a certain width, wherein the certain width is of a nanometric scale. The milling of each structural element of the array may include scanning a defocused ion beam of the certain width along a longitudinal axis of the structural element. A current intensity of the defocused ion beam decreases with a distance from a middle of the defocused ion beam.

Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component.

The present invention relates to an apparatus and method for analyzing the energy of backscattered electrons generated from a specimen. The apparatus includes: an electron beam source (101) for generating a primary electron beam; an electron optical system (102, 105, 112) configured to direct the primary electron beam to a specimen while focusing and deflecting the primary electron beam; and an energy analyzing system configured to detect an energy spectrum of backscattered electrons emitted from the specimen. The energy analyzing system includes: a Wien filter (108) configured to disperse the backscattered electrons; a detector (107) configured to measure the energy spectrum of the backscattered electrons dispersed by the Wien filter (108); and an operation controller (150) configured to change an intensity of a quadrupole field of the Wien filter (108), while moving a detecting position of the detector (107) for the backscattered electrons in synchronization with the change in the intensity of the quadrupole field.

A plasma processing apparatus includes a process chamber having an inner space, an electrostatic chuck in the process chamber and to which a substrate is mounted, a gas injection unit to inject a process gas into the process chamber at a side of the process chamber, a plasma applying unit to transform the process gas injected into the process chamber into plasma, and a plasma adjusting unit disposed around the electrostatic chuck and operative to adjust the density of the plasma across the substrate.

A charged particle beam device for inspecting a specimen is described. The charged particle beam device includes a beam source for emitting a charged particle beam, an electrode for influencing the charged particle beam, and a damping unit provided on the electrode for damping vibrations of the electrode. Further, an objective lens module with an electrode is described, wherein a damping unit is provided on the electrode. Further, an electrode device is described, wherein a mass damper is mounted on a disk-shaped electrode body of the electrode device.

An apparatus comprises an electron source chamber, an electron-beam sustained plasma (ESP) processing chamber, and a dielectric injector disposed between the electron source chamber and the ESP processing chamber. The dielectric injector comprises a first flared input region comprising a wide entry opening and a narrow exit opening. The wide entry opening opens into to the electron source chamber. The first flared input region is radially symmetric about a longitudinal axis of the dielectric injector. The dielectric injector further comprises a first parallel region comprising an input opening and an output opening. The input opening is adjacent to the narrow exit opening. The output opening is disposed opposite of the input opening. The first parallel region is cylindrical.