An ion implanter having a beam park device on the way of a beamline through which an ion beam is transported toward a wafer is provided. The beam park device includes a pair of park electrodes which faces each other across the beamline, and a beam dump which is provided away from the beamline in a facing direction of the pair of park electrodes and on a downstream side of the pair of park electrodes in a beamline direction. At least one of the pair of park electrodes includes a plurality of electrode bodies which are disposed to be spaced apart from each other in a predetermined direction perpendicular to both a direction in which the beamline extends and the facing direction, and each of the plurality of electrode bodies extends from an upstream side toward the downstream side in the beamline direction.

A method for implanting high charge state ions into a workpiece while mitigating trace metal contamination includes generating desired ions at a first charge state from a desired species in an ion source, as well as generating trace metal ions of a contaminant species in a first ion beam. A charge-to-mass ratio of the desired ions and the trace metal ions is equal. The desired ions and trace metal ions are extracted from the ion source. At least one electron stripped from the desired ions to define a second ion beam of the desired ions at a second charge state and the trace metal ions. Only the desired ions from the second ion beam are selectively passed only through a charge selector to define a final ion beam of the desired ions at the second charge state and no trace metal ions, and the desired ions of the second charge state are implanted into a workpiece.

An apparatus is provided. The apparatus includes a beam current measuring device and a first electrode. The beam current measuring device is retractably movable into an ion beam trajectory so as to measure an ion beam current. The first electrode is disposed immediately upstream of the beam current measuring device in an ion beam transport channel. The first electrode serves both as a suppressor electrode for repelling secondary electrons released from the beam current measuring device, back toward the beam current measuring device, and as a beam optical element other than the suppressor electrode.

A method of operating a Post Column Filter (PCF) in a Scanning/Transmission Electron Microscope, and a Post Column Filter configured to operate according to the method. In an embodiment, the method includes receiving, at an entrance plane, an incoming beam of electrons; dispersing, by an energy dispersive element, the incoming beam of electrons into an energy dispersed beam of electrons; disposing a first plurality of quadrupoles between the entrance plane and a slit plane; operating the PCF in an EELS mode; and operating the PCF in an EFTEM mode. Operating the PCF in an EELS mode includes exciting one or more quadrupoles of the first plurality of quadrupoles at a first excitation level, wherein the first excitation level does not enlarge the energy dispersion of the energy dispersed beam of electrons; and forming an image of the energy dispersed beam of electrons on the image plane, the image being an EELS spectrum. Operating the PCF in the EFTEM mode includes including a slit at the slit plane in an optical path; exciting one or more quadrupoles of the first plurality of quadrupoles at a second excitation level, the second excitation level different from the first excitation level; forming an energy dispersed focus of the energy dispersed beam of electrons on the slit at the slit plane; and enlarging the energy dispersion of the energy dispersed beam of electrons caused by the energy dispersive element based on the one or more first plurality quadrupoles excited at the second excitation level.

An ion implantation apparatus includes an ion source that is capable of generating a calibration ion beam including a multiply charged ion which has a known energy corresponding to an extraction voltage, an upstream beamline that includes amass analyzing magnet and a high energy multistage linear acceleration unit, an energy analyzing magnet, a beam energy measuring device that measures an energy of the calibration ion beam downstream of the energy analyzing magnet, and a calibration sequence unit that produces an energy calibration table representing a correspondence relation between the known energy and the energy of the calibration ion beam measured by the beam energy measuring device. An upstream beamline pressure is adjusted to a first pressure during an ion implantation process, and is adjusted to a second pressure higher than the first pressure while the energy calibration table is produced.

A system and method for compensating for chromatic aberration in a transmission electron microscope used with an electron energy level spectrometer is described. The method adjusts an electrostatic or magnetic lens located between an electron microscope and a bending magnet to focus the electron microscope beam at electron energy levels under observation.

A mass analyzer includes a mass analyzing magnet that applies a magnetic field to ions extracted from an ion source to deflect the ions, a mass analyzing slit that is provided downstream of the mass analyzing magnet and allows an ion of a desired ion species among the deflected ions to selectively pass, and a lens device that is provided between the mass analyzing magnet and the mass analyzing slit and applies a magnetic field and/or an electric field to the ion beam to adjust the convergence or divergence of a ion beam. The mass analyzer changes a focal point of the ion beam in a predetermined adjustable range between an upstream side and a downstream side of the mass analyzing slit with the lens device to adjust mass resolution.

An ion generator includes an ion source control unit that controls a gas supply unit and a plasma excitation source in accordance with a current ion source condition and a new ion source condition to be employed subsequent to the current ion source condition, a retention time obtaining unit that obtains retention time for the current ion source condition, and a pre-treatment condition setting unit that sets a pre-treatment condition defining a pre-treatment for forming a surface layer region suitable for the new ion source condition on a plasma chamber inner wall based on the current ion source condition, the retention time, and the new ion source condition. The ion source control unit is configured to control the gas supply unit and the plasma excitation source in accordance with the pre-treatment condition when the current ion source condition is changed to the new ion source condition.

An ion implantation apparatus includes an ion source that is capable of generating a calibration ion beam including a multiply charged ion which has a known energy corresponding to an extraction voltage, an upstream beamline that includes amass analyzing magnet and a high energy multistage linear acceleration unit, an energy analyzing magnet, a beam energy measuring device that measures an energy of the calibration ion beam downstream of the energy analyzing magnet, and a calibration sequence unit that produces an energy calibration table representing a correspondence relation between the known energy and the energy of the calibration ion beam measured by the beam energy measuring device. An upstream beamline pressure is adjusted to a first pressure during an ion implantation process, and is adjusted to a second pressure higher than the first pressure while the energy calibration table is produced.

A method of operating a Post Column Filter (PCF) in a Scanning/Transmission Electron Microscope, and a Post Column Filter configured to operate according to the method. In an embodiment, the method includes receiving, at an entrance plane, an incoming beam of electrons; dispersing, by an energy dispersive element, the incoming beam of electrons into an energy dispersed beam of electrons; disposing a first plurality of quadrupoles between the entrance plane and a slit plane; operating the PCF in an EELS mode; and operating the PCF in an EFTEM mode. Operating the PCF in an EELS mode includes exciting one or more quadrupoles of the first plurality of quadrupoles at a first excitation level, wherein the first excitation level does not enlarge the energy dispersion of the energy dispersed beam of electrons; and forming an image of the energy dispersed beam of electrons on the image plane, the image being an EELS spectrum. Operating the PCF in the EFTEM mode includes including a slit at the slit plane in an optical path; exciting one or more quadrupoles of the first plurality of quadrupoles at a second excitation level, the second excitation level different from the first excitation level; forming an energy dispersed focus of the energy dispersed beam of electrons on the slit at the slit plane; and enlarging the energy dispersion of the energy dispersed beam of electrons caused by the energy dispersive element based on the one or more first plurality quadrupoles excited at the second excitation level.