Methods and a system of an ion implantation system are configured for increasing beam current above a maximum kinetic energy of a first charge state from an ion source without changing the charge state at the ion source. Ions having a first charge state are provided from an ion source and are selected into a first RF accelerator and accelerated in to a first energy. The ions are stripped to convert them to ions having various charge states. A charge selector receives the ions of various charge states and selects a final charge state at the first energy. A second RF accelerator accelerates the ions to final energy spectrum. A final energy filter filters the ions to provide the ions at a final charge state at a final energy to a workpiece.

Provided herein are approaches for controlling an ion beam using an electrostatic filter with curved electrodes. In some embodiments, a system may include an electrostatic filter receiving an ion beam, the filter including first and second electrodes disposed opposite sides of an ion beam line, each of the first and second electrodes having a central region between first and second ends, wherein a distance between a first outer surface of the first electrode and a second outer surface of the second electrode varies along an electrode length axis extending between the first and second ends. The system may further include a power supply in communication with the electrostatic filter, the power supply operable to supply a voltage and a current to the first and second electrodes, wherein the variable distance between the first and second outer surfaces causes the ion beam to converge or diverge.

An apparatus is provided. The apparatus may include a main chamber, an entrance tunnel, the entrance tunnel having an entrance axis extending into the main chamber; an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend of less than 25 degrees therebetween, and an electrode assembly, disposed in the main chamber, and defining a beam path between the entrance tunnel and the exit tunnel. The electrode assembly may include an upper electrode, disposed on a first side of the beam path, and a plurality of lower electrodes, disposed on a second side of the beam path, the plurality of lower electrodes comprising at least three electrodes.

Various methods and systems are provided for generating an energy resolved chroma image of a sample. Upon irradiated by a charged particle beam, scattered charged particles from the sample are directed to form a first image before entering a spectrometer. The scattered charged particles are then dispersed based on their energy when passing through the spectrometer. The dispersed particles form a second image on a detector. The scattered particles at each location of the first image is spread along a corresponding energy spread vector in the second image.

A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter, the ion beam being electrostatically deviated in a first direction and a second direction in order to move the ion beam over the wafer, and the implantation filter being moved in the second direction to match the movement of the ion beam.

An integral Wien filter and vacuum pump for separating charged particles or for orienting their spin direction while maintaining optimal beamline vacuum. The vacuum pump is an ion pump including one or more cylindrical Penning cells to trap and expel electrons. The Wien filter includes orthogonal electric and magnetic fields to direct particles with the desired speed through the device while deflecting particles at undesired speeds. The Wien filter includes two electrodes, one biased positive and one biased negative, a dipole magnet, and means for reversing polarity of the electrodes to flip the spin of the charged particles. Metal plates on either side of the Penning cells embed gas that is ionized by trapped electrons in the Penning cell thus creating vacuum by turning gas into solid. The two metal plates can be configured to obtain vacuum pumping via chemical gettering and for removal of noble gases.

A new multi-beam apparatus with a total FOV variable in size, orientation and incident angle, is proposed. The new apparatus provides more flexibility to speed the sample observation and enable more samples observable. More specifically, as a yield management tool to inspect and/or review defects on wafers/masks in semiconductor manufacturing industry, the new apparatus provide more possibilities to achieve a high throughput and detect more kinds of defects.

The invention relates to an implantation device, an implantation system and a method. The implantation device includes a filter frame and a filter held by the filter frame, and a collimator structure. The filter is designed to be irradiated by an ion beam passing through the filter. The collimator structure is arranged on the filter, in the transmitted beam downstream of the filter, or on the target substrate.

Provided herein are approaches for increasing operational range of an electrostatic lens. An electrostatic lens of an ion implantation system may receive an ion beam from an ion source, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line. The ion implantation system may further include a power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens.

Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component.