A scanning electron microscopy (SEM) system includes a plurality of electron beam sources configured to generate a primary electron beam. The SEM system includes an electron-optical column array with a plurality of electron-optical columns. An electron-optical column includes a plurality of electron-optical elements. The plurality of electron-optical elements includes a deflector layer configured to be driven via a common controller shared by at least some of the plurality of electron-optical columns and includes a trim deflector layer configured to be driven by an individual controller. The plurality of electron-optical elements is arranged to form an electron beam channel configured to direct the primary electron beam to a sample secured on a stage, which emits an electron beam in response to the primary electron beam. The electron-optical column includes an electron detector. The electron beam channel is configured to direct the electron beam to the electron detector.

A charged particle beam system includes a charged particle source, an extraction electrode, a suppressor electrode, a first variable voltage supply for biasing the extraction electrode with an extraction voltage and a second variable voltage supply for biasing the suppressor electrode with a suppressor voltage.

A method relates to the in situ preparation of a microscopic specimen is carried out using a particle beam device, which includes a particle beam column for producing a focused beam of charged particles, a specimen receptacle for receiving a specimen block, and a detector for detecting interaction products of the interaction between particle beam and specimen material. The method includes: providing a specimen block having an exposed structure that comprises a specimen region of interest; producing a bending edge in the exposed structure by the action of the particle beam such that at least some of the exposed structure is shaped in the direction of the incident particle beam; and moving the specimen receptacle, in which the specimen block is received, so that a specimen region, which is enclosed by the shaped structure, is observable and/or processable in the particle beam device.

Techniques for yield management in semiconductor inspection systems are described. According to one aspect of the present invention, columns of sensing mechanism in an inspection station are configured with different functions, weights and performances to inspect a sample to significantly reduce the time that would be otherwise needed when all the columns were equally applied.

An ion source that is capable of different modes of operation is disclosed. A solid target may be disposed in the arc chamber. The ion source may have several gas inlets, in communication with different gasses. When operating in a first mode, the ion source may supply a first gas, such as a halogen containing gas. When operating in a second mode, the ion source may supply an organoaluminium gas. Ions having single charges may be created in the first mode, while ions having multiple charges may be created in the second mode. In some embodiments, the solid target may be retractable.

This invention provides a charged particle source, which comprises an emitter and means fo generating a magnetic field distribution. The magnetic field distribution is minimum, about zero, or preferred zero at the tip of the emitter, and along the optical axis is maximum away from the tip immediately. In a preferred embodiment, the magnetic field distribution is provided by dual magnetic lens which provides an anti-symmetric magnetic field at the tip, such that magnetic field at the tip is zero.

An electron source, e.g. for a free electron laser used for EUV lithography comprises: a cathode (203) configured to be connected to a negative potential (100, 101); a laser (110) configured to direct pulses of radiation onto the cathode so as to cause the cathode to emit bunches of electrons; an RF booster (180) connected to an RF source and configured to accelerate the bunches of electrons; and a timing corrector (303, 313, 400, 401) configured to correct the time of arrival of bunches of electrons at the RF booster relative to the RF voltage provided by the RF source. The timing corrector may comprise a correction electrode (303, 313) surrounding a path of the bunches of electrons from the cathode to the RF booster and a correction voltage source (400, 401) configured to apply a correction voltage to the correction electrode.

A method relates to the in situ preparation of a microscopic specimen is carried out using a particle beam device, which includes a particle beam column for producing a focused beam of charged particles, a specimen receptacle for receiving a specimen block, and a detector for detecting interaction products of the interaction between particle beam and specimen material. The method includes: providing a specimen block having an exposed structure that comprises a specimen region of interest; producing a bending edge in the exposed structure by the action of the particle beam such that at least some of the exposed structure is shaped in the direction of the incident particle beam; and moving the specimen receptacle, in which the specimen block is received, so that a specimen region, which is enclosed by the shaped structure, is observable and/or processable in the particle beam device.

Apparatus and methods for the alignment of a charged-particle beam with an optical beam within a charged-particle beam microscope, and to the focusing of the optical beam are disclosed. An embodiment includes a charged-particle beam microscope having one or more charged-particle beams, such as an electron beam, and one or more optical beams provided by an optical-beam accessory that is mounted in or on the charged-particle beam microscope. This accessory is integrated into a nanomanipulator system, allowing its focus location to be moved within the microscope. The apparatus includes a two-dimensional pixelated beam locator such as a CCD or CMOS imaging array sensor. The image formed by this sensor can then be used to manually, or automatically in an open or closed loop configuration, adjust the positioning of one or more charged-particle beams or optical beams to achieve coincidence of such beams or focus of one or more such beams.

A charged particle beam apparatus includes a charged particle source configured to generate charged particles, an electrode configured to accelerate the charged particles to form a charged particle beam, a bender unit configured to adjust a path of the charged particle beam, and an objective lens configured to focus the charged particle beam onto a spot on a sample. The charged particle beam passes through a bore of the objective lens as the charged particle beam propagates from the charged particle source to the sample. The apparatus also includes a light source configured to generate a light beam, and a mirror disposed within the bender unit and arranged to direct the light beam to the spot on the sample.