A method for structuring a decorative or technical pattern in the thickness of an object made of an at least partially transparent amorphous, semi-crystalline or crystalline material, wherein the object is made of an at least partially transparent material including a top surface and a bottom surface which extends away from the top surface. The top or bottom surfaces is provided with a mask defining an opening whose outline corresponds to the profile of the pattern to be structured, the mask covering the top or bottom surface at the positions which are not to be structured. The pattern is structured with a mono- or multicharged ion beam through the opening of the mask, wherein the mechanical properties of the mask are sufficient to prevent the ions of the ion beam from etching the top or bottom surface at the positions where this top or bottom surface is covered by the mask.

Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions from corresponding silicon precursor compositions, and implantation of the silicon and/or silicon ions in the substrate.

A beam deflector includes a magnetic-flux-guiding structure which has an opening through which a beam axis extends, and at least two coils arranged at the magnetic-flux-guiding structure so that they produce a magnetic field B.sub.1 having lines passing through the two coils in succession, leave the magnetic-flux-guiding structure at a first location on a first side in relation to the beam axis, cross the beam axis at a second location which is arranged at a distance along the beam axis from the magnetic-flux-guiding structure, re-enter into the magnetic flux-guiding structure at a third location on a second side lying opposite the first side, and extend around the opening from the third location to the first location within the magnetic-flux-guiding structure.

There is provided an ion generator including a vapor generating chamber for generating a vapor by heating a raw material in which a first solid material which is a single substance of an impurity element and a second solid material which is a compound containing the impurity element are mixed with each other, and a plasma generating chamber for generating a plasma containing ions of the impurity element by using the vapor.

A method for the surface treatment of a substrate surface of a substrate includes arranging the substrate surface in a process chamber, bombarding the substrate surface with an ion beam, generated by an ion beam source and aimed at the substrate surface, to remove impurities from the substrate surface, whereby the ion beam has a first component, and introducing a second component into the process chamber to bind the removed impurities. A device for the surface treatment of a substrate surface of a substrate includes a process chamber for receiving the substrate, an ion beam source for generating an ion beam that has a first component and is aimed at the substrate surface to remove impurities from the substrate surface, and means to introduce a second component into the process chamber to bind the removed impurities.

An ion source is provided that includes a gas source for supplying a gas, and an ionization chamber defining a longitudinal axis extending therethrough and including an exit aperture along a side wall of the ionization chamber. The ion source also includes one or more extraction electrodes at the exit aperture of the ionization chamber for extracting ions from the ionization chamber in the form of an ion beam. At least one of the extraction electrodes comprises a set of discrete rods forming a plurality of slits in the at least one extraction electrode for enabling at least one of increasing a current of the ion beam or controlling an angle of extraction of the ion beam from the ionization chamber. Each rod in the set of discrete rods is parallel to the longitudinal axis of the ionization chamber.

A method of manufacturing a Radio Frequency (RF) coil for a multi-driven RF based negative ion source includes manufacturing a first coil and a second coil using tubes of stainless steel as a substrate material, coating the first coil and the second coil separately; and joining the first coil and the second coil by orbital TIG welding after coating the first coil and the second coil to provide the RF coil for the multi-driven RF based negative ion source.

There is provided an ion generator including a vapor generating chamber for generating a vapor by heating a raw material in which a first solid material which is a single substance of an impurity element and a second solid material which is a compound containing the impurity element are mixed with each other, and a plasma generating chamber for generating a plasma containing ions of the impurity element by using the vapor.

A method and system for providing at least one of planarization, densification, and exfoliation of a porous material using ion beams. The method may use an ion beam generator to generate an ion beam, the ion beam having energy above 0.1 MeV. The ion beam generator may irradiate the surface of a porous material with the ion beam to produce at least one of planarization, densification, and exfoliation of the porous material.

A method for measuring conductance of a material real-time during etching/milling includes providing a fixture having a socket for receiving the material. The socket is attached to a printed circuit board (PCB) mounted on one side of a plate that has at least one opening for providing ion beam access to the material sample. Conductive probes extend from the other side of the PCB to contact and span a target area of the material. A measurement circuit in electrical communication with the probes measures the voltage produced when a current is applied across the material sample to measure changes in electrical properties of the sample over time.