Provided is a sample milling apparatus capable of milling various samples efficiently. The sample milling apparatus includes an anode, a cathode for emitting electrons which are made to collide with gas molecules so that ions are generated, an extraction electrode for causing the generated ions to be extracted as an ion beam, and a focusing electrode disposed between the cathode and the extraction electrode and applied with a focusing voltage. The spatial profile of the ion beam is controlled by varying the focusing voltage applied to the focusing electrode.

The disclosure relates to a photolithography method based on electronic beam. The method includes: providing an electronic beam; making the electron beam transmit a two dimensional nanomaterial to form a transmission electron beam and a number of diffraction electron beams; shielding the transmission electron beam; and radiating a surface of an object by the plurality of diffraction electron beams. The photolithography method is high efficiency and has low cost.

The disclosure relates to an electronic beam machining system. The system includes a vacuum chamber; an electron gun located in the vacuum chamber and used to emit electron beam; a holder located in the vacuum chamber and used to fix an object; a control computer; and a diffraction unit located in the vacuum chamber; the diffraction unit includes a two-dimensional nanomaterial; the electron beam transmits the two-dimensional nanomaterial to form a transmission electron beam and a plurality of diffraction electron beams; the transmission electron beam and the plurality of diffraction electron beams radiate the object to form a transmission spot and a plurality of diffraction spots.

An electron source emits an electron beam. The electron beam is received by a beam limiting assembly. The beam limiting assembly has a first beam limiting aperture with a first diameter and a second beam limiting aperture with a second diameter larger than the first diameter. The first beam limiting aperture receives the electron beam. This beam limiting assembly reduces the influence of Coulomb interactions.

A system for performing surface analysis on a material, includes a pulsed electron source that forms a monochromatic beam of incident electrons; means for conveying the incident electrons to the surface of a sample of material, so as to form backscattered electrons, and the backscattered electrons to detecting means, the conveying means comprising at least one electron optical system; means for detecting the backscattered electrons; the pulsed electron source comprising: a source of atoms; a continuous-wave laser beam configured to form a laser excitation zone able to excite the atoms to Rydberg states; a pulsed electric field on either side of the laser excitation zone, the pulsed electric field being configured to ionize at least the excited atoms and to form a monochromatic beam of electrons.

Electron beam spot characteristics can be tuned in each x-ray tube by moving a focusing-ring along a longitudinal-axis of the x-ray tube. The focusing-ring can then be immovably fastened to the x-ray tube.

An x-ray source can include an x-ray tube and a focusing-ring. The focusing-ring can at least partially encircle an electron-emitter, a cathode, an evacuated-enclosure, or combinations thereof. The focusing-ring can be located outside of a vacuum of the evacuated enclosure. The focusing-ring can adjust an electron-beam spot on a target material of the x-ray tube when moved along a longitudinal-axis extending linearly from the electron-emitter to the target material.

A device manufacturing apparatus and manufacturing method of a magnetic device. The device manufacturing apparatus can include a substrate holding portion configured to hold a substrate, an ion source, an anode disposed in a housing of the ion source, and a cathode disposed outside the housing of the ion source. A first opening can be disposed in a portion of the housing such the anode is exposed to a region between the anode and the substrate holding portion. The ion source can be configured to generate an ion beam with which the substrate is irradiated. A first structure can be disposed between the ion source and the substrate holding portion. The first structure can have a first through hole through which the ion beam can pass. The first structure can include a conductor, and an opening dimension of the first through hole can be equal to or larger than an opening dimension of the first opening.

An apparatus includes: a structure having a lumen for accommodating a beam, wherein the structure is a component of a medical radiation machine having a target for interaction with the beam to generate radiation; and a first beam position monitor comprising a first electrode and a second electrode, the first electrode being mounted to a first side of the structure, the second electrode being mounted to a second side of the structure, the second side being opposite from the first side; wherein the first beam position monitor is located upstream with respect to the target.

An ion implanter has a coating of low resistivity silicon carbide on one or more of the conductive surfaces that are exposed to ions. For example, ions are generated in an ion source chamber, and the interior surfaces of the walls are coated with low resistivity silicon carbide. Since silicon carbide is hard and resistant to sputtering, this may reduce the amount of contaminant ions that are introduced into the ion beam that is extracted from the ion source chamber. In some embodiments, the extraction electrodes are also coated with silicon carbide to reduce the contaminant ions introduced by these components.

Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.