The objective of the present invention is to provide a charged-particle beam device capable of moving a field-of-view to an exact position even when moving the field-of-view above an actual sample. In order to attain this objective, a charged-particle beam device is proposed comprising an objective lens whereby a charged-particle beam is focused and irradiated onto a sample; a field-of-view moving deflector for deflecting the charged-particle beam; and a stage onto which the sample is placed. The charged-particle beam device is equipped with a control device which controls the lens conditions for the objective lens in such a manner that the charged-particle been focuses on the sample which is to be measured; moves the field-of-view via the field-of-view moving deflector while maintaining the lens conditions; acquires a plurality of images at each position among a reference pattern extending in a specified direction; and uses the plurality of acquired images to adjust the signal supplied to the field-of-view moving deflector.

An ion beam treatment or implantation system includes an ion source emitting a plurality of parallel ion beams having a given spacing. A first lens magnet having a non-uniform magnetic field receives the plurality of ion beams from the ion source and focuses the plurality of ion beams toward a common point. The system may optionally include a second lens magnet having a non-uniform magnetic field receiving the ion beams focused by the first lens magnet and redirecting the ion beams such that they have a parallel arrangement having a closer spacing than said given spacing in a direction toward a target substrate.

Charged particle microscopes having an optimized performance across multiple modes of operation are disclosed herein. More specifically, the disclosure includes improved charged particle microscopes that increase and/or optimize the performance of the microscope in both a standard mode of operation and a Lorentz mode of operation. The charged particle microscopes include an extra transfer lens between a corrector and the traditional transfer lens which allows for the flexibility to optimize performance in both the standard mode of operation and the Lorentz mode of operation. For example, in a Lorentz mode of operation, improved charged particle microscope according to the present disclosure can be used to tune the C.sub.5 aberration, while hardly affecting defocus and/or C.sub.S aberrations. Additionally, the inclusion of the extra transfer lens provides the charged particle microscopes disclosed herein with an extra degree of freedom with which to zero defocus and total C.sub.S and C.sub.5.

In one embodiment, a multi-charged-particle beam writing apparatus includes an emission unit emitting a charged-particle beam, a limiting aperture substrate including a single first aperture, a shaping aperture array that has a plurality of second apertures and that is irradiated with the charged-particle beam having passed through the first aperture in a region including the plurality of second apertures and forms multi-beams by letting part of the charged-particle beam pass through the plurality of second apertures, and a blanking aperture array member including a plurality of third apertures through each of which a corresponding one of the multi-beams that have passed through the plurality of second apertures passes, the blanking aperture array member having a blanker in each of the third apertures, the blanker performing blanking deflection on the corresponding beam.

A charged particle beam device includes an electron source which generates an electron beam, an objective lens which is applied with a coil current to converge the electron beam on a sample, a control unit which controls the current to be applied to the objective lens, a hysteresis characteristic storage unit which stores hysteresis characteristic information of the objective lens, a history information storage unit which stores history information related to the coil current, and an estimation unit which estimates a magnetic field generated by the objective lens on the basis of the coil current, the history information, and the hysteresis characteristic information.

An objective lens arrangement includes a first, second and third pole pieces, each being substantially rotationally symmetric. The first, second and third pole pieces are disposed on a same side of an object plane. An end of the first pole piece is separated from an end of the second pole piece to form a first gap, and an end of the third pole piece is separated from an end of the second pole piece to form a second gap. A first excitation coil generates a focusing magnetic field in the first gap, and a second excitation coil generates a compensating magnetic field in the second gap. First and second power supplies supply current to the first and second excitation coils, respectively. A magnetic flux generated in the second pole piece is oriented in a same direction as a magnetic flux generated in the second pole piece.

Provided is a multiple electron beam inspection apparatus including: an irradiation source irradiating a substrate with multiple electron beams; a stage on which is cable of mounting the substrate; an electromagnetic lens provided between the irradiation source and the stage, the electromagnetic lens generating a lens magnetic field, the multiple electron beams being capable of passing through the lens magnetic field; an electrostatic lens provided in the lens magnetic field, the electrostatic lens including a plurality of through-holes and a plurality of electrodes, the plurality of through-holes having wall surfaces respectively, each of the multiple electron beams being capable of passing through the corresponding each of the plurality of through-holes, each of the plurality of electrodes provided on each of the wall surfaces of the plurality of through-holes, at least one of the through-holes provided apart from a central axis of trajectory of the multiple electron beams having a spiral shape; and a power source connected to the electrodes.

A multi-charged particle beam writing apparatus according to one aspect of the present invention includes a region setting unit configured to set, as an irradiation region for a beam array to be used, the region of the central portion of an irradiation region for all of multiple beams of charged particle beams implemented to be emittable by a multiple beam irradiation mechanism, and a writing mechanism, including the multiple beam irradiation mechanism, configured to write a pattern on a target object with the beam array in the region of the central portion having been set in the multiple beams implemented.

An objective lens arrangement includes a first, second and third pole pieces, each being substantially rotationally symmetric. The first, second and third pole pieces are disposed on a same side of an object plane. An end of the first pole piece is separated from an end of the second pole piece to form a first gap, and an end of the third pole piece is separated from an end of the second pole piece to form a second gap. A first excitation coil generates a focusing magnetic field in the first gap, and a second excitation coil generates a compensating magnetic field in the second gap. First and second power supplies supply current to the first and second excitation coils, respectively. A magnetic flux generated in the second pole piece is oriented in a same direction as a magnetic flux generated in the second pole piece.

Disclosed are a charged particle beam apparatus wherein the charged particle beam apparatus can efficiently performs finish processing of a sample and acquisition of a high-precision SEM image of a processing surface of the sample in a short time, and a sample processing observation method using the same. The charged particle beam apparatus includes: a gallium ion beam column radiating a gallium ion beam toward a sample to form a cross-section of the sample; an electron beam column having a semi-in-lens type objective lens and radiating an electron beam toward the sample; a gas ion beam column radiating a gas ion beam toward the sample to perform finish processing of the cross-section of the sample, wherein the gas ion beam has a beam diameter larger than a maximum diameter of the cross-section of the sample.