An ElectroMagnetic-Mechanical Pulser can generate electron pulses at rates up to 50 GHz, energies up to 1 MeV, duty cycles up to 10%, and pulse widths between 100 fs and 10 ps. A modulating Transverse Deflecting Cavity (TDC) imposes a transverse modulation on a continuous electron beam, which is then chopped into pulses by an adjustable Chopping Collimating Aperture. Pulse dispersion due to the modulating TDC is minimized by a suppressing section comprising a plurality of additional TDC's and/or magnetic quadrupoles. In embodiments the suppression section includes a magnetic quadrupole and a TDC followed by four additional magnetic quadrupoles. The TDC's can be single-cell or triple-cell. A fundamental frequency of at least one TDC can be tuned by literally or virtually adjusting its volume. TDC's can be filled with vacuum, air, or a dielectric or ferroelectric material. Embodiments are easily switchable between passive, continuous mode and active pulsed mode.

A method is provided for processing and/or observing an object using at least one particle beam that is scanned over the object. A scan region on the object is determined, the scan region having scan lines, and the particle beam is moved in a first scanning direction along one of the scan lines. The first scanning direction is changed to a second scanning direction at a change-of-direction time. Changing from the first scanning direction to the second scanning direction comprises setting of a point of rotation in that scan line of the scan region in which the particle beam is situated at the change-of-direction time, with an axis of rotation extending through the point of rotation. The first scanning direction is changed into the second scanning direction by rotating the scan region about the axis of rotation, with the point of rotation being selected dependent on the direction of rotation.

A processing apparatus and a processing method are provided, which use a charged particle beam device that achieves defection of secondary electrons/reflected electrons at a large angle and cancels out noises of an electromagnetic deflector and an electrostatic deflector to suppress a position shift of a primary electron beam caused by circuit noises of a primary beam/secondary beam separation circuit. In the charged particle beam device that includes an electronic optical system radiating a concentrated electron beam onto a sample placed on a stage to perform scanning and captures an image of the sample, a reference signal and a signal generation unit of a voltage-source control signal applied to the electrostatic deflector generating the electrostatic deflector and a reference signal and a signal generation unit of a current-source control signal applied to the electromagnetic deflector generating a magnetic field are made common in an overlapping-electromagnetic-deflector control unit that controls a path of the secondary electrons/reflected electrons incident on a detector, and frequency characteristics and phase characteristics of the voltage control signal are coincident with those of the current-source control signal.

A high-energy ion implantation system has an ion source and mass analyzer to form and analyze an ion beam along a beam path. A first RF LINAC accelerates the ion beam to a first accelerator exit, and a second RF LINAC accelerates the ion beam to a second accelerator exit along the beam path. A first magnet between the first and second RF LINACs alters the beam path along a first plane. A third RF LINAC accelerates the ion beam, and a second magnet between the second and third RF LINACs alters the beam path along a second plane. A beam shaping apparatus defines a shape of the ion beam, and a third magnet between the third RF LINAC beam shaping apparatus alters the beam path along a third plane, where the first, second, and third planes are not coplanar.

A scanning electron microscope (SEM) with a swing objective lens (SOL) reduces the off-aberrations to enhance the image resolution, and extends the e-beam scanning angle. The scanning electron microscope comprises a charged particle source, an accelerating electrode, and a swing objective lens system including a pre-deflection unit, a swing deflection unit and an objective lens, all of them are rotationally symmetric with respect to an optical axis. The upper inner-face of the swing deflection unit is tilted an angle to the outer of the SEM and its lower inner-face is parallel to the optical axis. A distribution for a first and second focusing field of the swing objective lens is provided to limit the off-aberrations and can be performed by a single swing deflection unit. Preferably, the two focusing fields are overlapped by each other at least 80 percent.

The purpose of the present invention is to provide a charged particle gun using merely an electrostatic lens, said charged particle gun being relatively small and having less aberration, and to provide a field emission-type charged particle gun having high luminance even with a high current. This charged particle gun has: a charged particle source; an acceleration electrode that accelerates charged particles emitted from the charged particle source; a control electrode, which is disposed further toward the charged particle source side than the acceleration electrode, and which has a larger aperture diameter than the aperture diameter of the acceleration electrode; and a control unit that controls, on the basis of a potential applied to the acceleration electrode, a potential to be applied to the control electrode.

A multi-beam inspection apparatus including an adjustable beam separator is disclosed. The adjustable beam separator is configured to change a path of a secondary particle beam. The adjustable beam separator comprises a first Wien filter and a second Wien filter. Both Wien filters are aligned with a primary optical axis. The first Wien filter and the second Wien filter are independently controllable via a first excitation input and a second excitation input, respectively. The adjustable beam separator is configured move the effective bending point of the adjustable beam separator along the primary optical axis based on the first excitation input and the second excitation input.

The present disclosure provides a method of reducing coma and chromatic aberration in a charged particle beam device for providing a beam tilt of a charged particle beam. The method includes tilting the charged particle beam with a deflection assembly consisting of two or more electrostatic deflection elements, wherein at least one deflection element of the two or more deflection elements is a post-lens deflector, while the charged particle beam is guided through an essentially coma-free z-position of an objective lens, and reducing off-axis chromatic aberrations with a magnetic deflection element, wherein tilting the charged particle beam reduces coma independent of off-axis chromatic aberrations.

A high-energy ion implantation system has an ion source and mass analyzer to form and analyze an ion beam along a beam path. A first RF LINAC accelerates the ion beam to a first accelerator exit, and a second RF LINAC accelerates the ion beam to a second accelerator exit along the beam path. A first magnet between the first and second RF LINACs alters the beam path along a first plane. A third RF LINAC accelerates the ion beam, and a second magnet between the second and third RF LINACs alters the beam path along a second plane. A beam shaping apparatus defines a shape of the ion beam, and a third magnet between the third RF LINAC beam shaping apparatus alters the beam path along a third plane, where the first, second, and third planes are not coplanar.

A high-energy ion implantation system has an ion source and mass analyzer to form and analyze an ion beam along a beam path. A first RF LINAC accelerates the ion beam to a first accelerator exit, and a second RF LINAC accelerates the ion beam to a second accelerator exit along the beam path. A first magnet between the first and second RF LINACs alters the beam path along a first plane. A third RF LINAC accelerates the ion beam, and a second magnet between the second and third RF LINACs alters the beam path along a second plane. A beam shaping apparatus defines a shape of the ion beam, and a third magnet between the third RF LINAC beam shaping apparatus alters the beam path along a third plane, where the first, second, and third planes are not coplanar.