A multi-charged particle beam irradiation apparatus includes a forming mechanism to form multiple charged particle beams, a multipole deflector array to individually deflect each beam of the multiple charged particle beams so that a center axis trajectory of each beam of the multiple charged particle beams may not converge in a region of the same plane orthogonal to the direction of a central axis of a trajectory of the multiple charged particle beams, and an electron optical system to irradiate a substrate with the multiple charged particle beams while maintaining a state where the multiple charged particle beams are not converged.

A beam deflector includes a magnetic-flux-guiding structure which has an opening through which a beam axis extends, and at least two coils arranged at the magnetic-flux-guiding structure so that they produce a magnetic field B.sub.1 having lines passing through the two coils in succession, leave the magnetic-flux-guiding structure at a first location on a first side in relation to the beam axis, cross the beam axis at a second location which is arranged at a distance along the beam axis from the magnetic-flux-guiding structure, re-enter into the magnetic flux-guiding structure at a third location on a second side lying opposite the first side, and extend around the opening from the third location to the first location within the magnetic-flux-guiding structure.

Systems and methods to focus and align multiple electron beams are disclosed. A camera produces image data of light from electron beams that is projected at a fiber optics array with multiple targets. An image processing module determines an adjustment to a voltage applied to a relay lens, a field lens, or a multi-pole array based on the image data. The adjustment minimizes at least one of a displacement, a defocus, or an aberration of one of the electron beams. Using a control module, the voltage is applied to the relay lens, the field lens, or the multi-pole array.

A multiple electron beam inspection apparatus includes a correction circuit that corrects a partial secondary electron image of partial secondary electron images configuring a secondary electron image and obtained by irradiation with a corresponding primary electron beam of the multiple primary electron beams such that the partial secondary electron image becomes close to a uniform beam partial image when an irradiation region of a primary electron beam corresponding to the partial secondary electron image is irradiated with a uniform beam obtained by equalizing shapes and sizes of all primary electron beams, by using a function for individual correction of each primary electron beam, for each of the plural partial secondary electron images, and an inspection circuit that performs inspection using plural partial secondary electron images each corrected.

The present invention provides an apparatus of charged-particle beam such as an electron microscope including a specimen table that can slide on a planar surface around the lower pole piece of the objective lens. The specimen table is confined in a specimen stage having one elastic protrusion and one or more elastic force receiving parts (e.g three permanent protrusions) that contact and press the table. When the specimen is under microscopic examination, disturbing vibration cannot generate a force sufficient to overcome the limiting friction between the specimen table and the planar surface of the objective lens. The invention exhibits numerous technical merits such as minimal or zero vibration noise, and improved image quality, among others.

A secondary projection imaging system in a multi-beam apparatus is proposed, which makes the secondary electron detection with high collection efficiency and low cross-talk. The system employs one zoom lens, one projection lens and one anti-scanning deflection unit. The zoom lens and the projection lens respectively perform the zoom function and the anti-rotating function to remain the total imaging magnification and the total image rotation with respect to the landing energies and/or the currents of the plural primary beamlets. The anti-scanning deflection unit performs the anti-scanning function to eliminate the dynamic image displacement due to the deflection scanning of the plural primary beamlets.

One modified source-conversion unit and one method to reduce the Coulomb Effect in a multi-beam apparatus are proposed. In the modified source-conversion unit, the aberration-compensation function is carried out after the image-forming function has changed each beamlet to be on-axis locally, and therefore avoids undesired aberrations due to the beamlet tilting/shifting. A Coulomb-effect-reduction means with plural Coulomb-effect-reduction openings is placed close to the single electron source of the apparatus and therefore the electrons not in use can be cut off as early as possible.

Provided is a scanning electron microscope which can perform high-speed focus correction even when an electron beam having high energy is used. The scanning electron microscope includes an electron optical system including an electron source 100 that emits an electron beam and an objective lens 113, a sample stage 1025 which is disposed on a stage 115 and on which a sample 114 is placed, a backscattered electron detector 1023 which is disposed between the objective lens and the sample stage and is configured to detect backscattered electrons 1017 emitted due to interaction between the electron beam and the sample, a backscattered electron detection system control unit 138 which is provided corresponding to the backscattered electron detector and is configured to apply a voltage to the backscattered electron detector, and a device control calculation device 146. The objective lens has an opening in a stage direction, and the device control calculation device performs focus correction of the electron beam by controlling the voltage applied to the backscattered electron detector from the backscattered electron detection system control unit.

Correctors for correcting axial aberrations of a particle-optical lens in a charged particle microscope system, according to the present disclosure include a first primary multipole that generates a first primary multipole field when a first excitation is applied to the first primary multipole, and a second primary multipole that generates a second primary multipole field when a second excitation is applied to the second primary multipole. The first primary multipole is not imaged onto the second primary multipole such that a combination fourth-order aberration is created. The correctors further include a secondary multipole for correcting the fourth-order aberration and the sixth-order aberration. Such correctors may further include a tertiary multipole for correcting an eighth-order aberration.

Systems and methods of forming images of a sample using a multi-beam apparatus are disclosed. The method may include generating a plurality of secondary electron beams from a plurality of probe spots on the sample upon interaction with a plurality of primary electron beams. The method may further include adjusting an orientation of the plurality of primary electron beams interacting with the sample, directing the plurality of secondary electron beams away from the plurality of primary electron beams, compensating astigmatism aberrations of the plurality of directed secondary electron beams, focusing the plurality of directed secondary electron beams onto a focus plane, detecting the plurality of focused secondary electron beams by a charged-particle detector, and positioning a detection plane of the charged-particle detector at or close to the focus plane.