An electron microscope capable of measuring aberrations accurately is provided. The microscope is adapted to obtain scanning transmission electron (STEM) images by detecting electrons transmitted through a sample (S). The microscope (100) includes a segmented detector (20) having a detection surface (23) for detecting the electrons transmitted through the sample (S). The detection surface (23) is divided into detector segments (D1-D16) for detecting the electrons transmitted through the sample (S). The microscope (100) further includes an aperture plate (30) for limiting the active areas of the detector segments (D1-D16) on which the electrons impinge.

An analysis method using an electron microscope, detects by a first electronography detector an electron beam transmitted through or scattered by a sample to detect an ADF image of the sample, detects by a second electronography detector the electron beam passing through the first electronography detector to detect an MABF image, adjusts a focal point of the electron beam to be located on the film of the sample to obtain first and second electronographies by the second and first electronography detectors, respectively, adjusts the focal point of the electron beam to be located on the substrate of the sample to obtain third and fourth electronographies by the second and first electronography detectors, respectively, aligns positions of the second and fourth electronographies based on the first and third electronographies, and after the aligning, subtracts the fourth electronography from the second electronography to obtain an image of the film.

There are disclosed an aberration correction method and a charged particle beam system capable of correcting off-axis first order aberrations. The aberration correction method is for use in the charged particle beam system (100) equipped with an aberration corrector (30) which has plural stages of multipole elements (32a, 32b) and a transfer lens system (34) disposed between the multipole elements (32a, 32b). The method includes varying the excitation of the transfer lens system (34) and correcting off-axis first order aberrations.

There is provided an electron microscope capable of measuring aberration with high accuracy. The electron microscope (100) comprises: an electron beam source (10) for producing an electron beam (EB); an illumination lens system (101) for focusing the electron beam (EB) onto a sample (S); a scanner (12) for scanning the focused electron beam (EB) over the sample (S); an aperture stop (30) having a plurality of detection angle-limiting holes (32) for extracting rays of the electron beam (EB) having mutually different detection angles from the electron beam (EB) transmitted through the sample (S); and a detector (20) for detecting the rays of the electron beam (EB) passed through the aperture stop (30).

Provided are a multistage-connected multipole and a charged particle beam device that can be produced with precision in machining without requiring precision in brazing between a pole and an insulation material. This multi-stage connected multipole 100 comprises: a plurality of poles Q1-Q4 that are arranged along the optical-axis direction of a charged particle beam, and that have cutouts Non surfaces facing each other; and braces P1-P3 that are arranged between the plurality of poles Q1-Q4 and are made of an insulator. The poles Q1-Q4 and the braces P1-P3 are joined by fitting the braces P1-P3 into the cutouts N and applying brazing so as to be interposed by a bonding material.

Methods include holding a sample with a movement stage configured to rotate the sample about a rotation axis, directing an imaging beam to a first sample location with the sample at a first rotational position about the rotation axis and detecting a first transmitted imaging beam image, rotating the sample using the movement stage about the rotation axis to a second rotational position, and directing the imaging beam to a second sample location by deflecting the imaging beam in relation to an optical axis of the imaging beam and detecting a second transmitted imaging beam image, wherein the second sample location is spaced apart from the first sample location at least at least in relation to the optical axis. Related systems and apparatus are also disclosed.

Multi-beam e-beam columns and inspection systems that use such multi-beam e-beam columns are disclosed. A multi-beam e-beam column configured in accordance with the present disclosure may include an electron source and a multi-lens array configured to produce a plurality of beamlets utilizing electrons provided by the electron source. The multi-lens array may be further configured to shift a focus of at least one particular beamlet of the plurality of beamlets such that the focus of the at least one particular beamlet is different from a focus of at least one other beamlet of the plurality of beamlets.

Improved aberration correction in multipass electron microscopy is provided by having Fourier images of the sample (instead of real images) at the reflection planes of the resonator. The resulting −1 magnification of the sample reimaging can be compensated by appropriate sample placement or by adding compensating elements to the resonator. This enables simultaneous correction of lowest order chromatic and spherical aberration from the electron objective lenses. If real images of the sample are at the reflection planes of the resonator instead, only the lowest order chromatic aberration can be corrected.

To provide a scanning electron microscope having an electron spectroscopy system to attain high spatial resolution and a high secondary electron detection rate under the condition that energy of primary electrons is low, the scanning electron microscope includes: an objective lens 105; primary electron acceleration means 104 that accelerates primary electrons 102; primary electron deceleration means 109 that decelerates the primary electrons and irradiates them to a sample 106; a secondary electron deflector 103 that deflects secondary electrons 110 from the sample to the outside of an optical axis of the primary electrons; a spectroscope 111 that disperses secondary electrons; and a controller that controls application voltage to the objective lens, the primary electron acceleration means and the primary electron deceleration means so as to converge the secondary electrons to an entrance of the spectroscope.

Provided is a charged particle beam apparatus capable of stably obtaining a spherical aberration correction effect. The charged particle beam apparatus includes: a charged particle beam aperture stop 121 and an electrode 122 that are arranged on an optical axis between the charged particle beam source 101 and the objective lens 105; and a power supply 108 that applies a voltage between the charged particle beam aperture stop 121 and the electrode 122, in which the voltage that is applied from the electrode to the charged particle beam aperture stop by the power supply is a voltage having a polarity opposite to a charge of the charged particle beam, the electrode 122 includes an annular aperture 205, and the charged particle beam aperture stop 121 includes a plurality of apertures 201 that are arranged at positions overlapping the annular aperture 205 of the electrode 122 when viewed in a direction Z along the optical axis.