A mechanical feedthrough apparatus is provided to be mounted on a pivot base of a vacuum apparatus. A first axial tube of the mechanical feedthrough apparatus is pivotally connected to the pivot base and a second axial tube of the mechanical feedthrough apparatus is inserted into the first axial tube. An external cone surface of the second axial tube contacts with an internal cone surface of a first axial tube such that the second axial tube is close-fitted to the first axial tube.

An ion beam etching system includes an etching cavity, an etching electrode, and an electrode displacement apparatus used for enabling the electrode to change a working position in the etching cavity. The electrode displacement apparatus includes a dynamic sealing mechanism, a dynamic electrode balance counterweight mechanism, an electrode displacement transmission mechanism, and an electrode displacement driving mechanism. The etching cavity includes a cavity and a cavity cover connected with the cavity. The cavity is of an irregular shape. The cavity includes a partial cylindrical body, a side plate, a tapered transition portion, and a bottom plate. The partial cylindrical body is laterally sealed by means of the side plate. The bottom plate is connected to an end of the partial cylindrical body by means of the tapered transition portion and seals the end of the partial cylindrical body.

Embodiments disclosed herein relate to a substrate processing chamber component assembly with plasma resistant seal. In one embodiment, the semiconductor processing chamber component assembly includes a first semiconductor processing chamber component, a second semiconductor processing component, and a sealing member. The sealing member has a body formed substantially from polytetrafluoroethylene (PTFE). The sealing member provides a seal between the first and second semiconductor processing chamber components. The body includes a first surface, a second surface, a first sealing surface, and a second sealing surface. The first surface is configured for exposure to a plasma processing region. The second surface is opposite the first surface. The first sealing surface and the second sealing surface extend between the first surface and the second surface. The first sealing surface contacts the first semiconductor processing chamber component. The second sealing surface contacts the second semiconductor processing chamber component.

A method and apparatus for dosage measurement and monitoring in an ion implantation system is disclosed. In one embodiment, a transferring system, includes: a vacuum chamber, wherein the vacuum chamber is coupled to a processing chamber; a shaft coupled to a ball screw, wherein the ball screw and the shaft are configured in the vacuum chamber; and a vacuum rotary feedthrough, wherein the vacuum rotary feedthrough comprises a magnetic fluid seal so as to provide a high vacuum sealing, and wherein the vacuum rotary feedthrough is configured through a first end of the vacuum chamber and coupled to the ball screw so as to provide a rotary motion on the ball screw.

An exposure device is provided, including: a body tube depressurized to produce a vacuum state therein; a plurality of charged particle beam sources that are provided in the body tube, and emit a plurality of charged particle beams in a direction of extension of the body tube; a plurality of electromagnetic optical elements, each being corresponding to one of the plurality of charged particle beams in the body tube, and controls the one of the plurality of charged particle beams; first and second partition walls that are arranged separately from each other in the direction of extension in the body tube, and form non-vacuum spaces between at least parts of the first and second partition walls; and a depressurization pump that depressurizes a non-vacuum space that contacts the first partition wall and a non-vacuum space that contacts the second partition wall to an air pressure between zero and atmospheric pressure.

Provided is a method of adjusting an electron-beam irradiated area in an electron beam irradiation apparatus that deflects an electron beam with a deflector to irradiate an object with the electron beam, the method including: emitting an electron beam while changing an irradiation position on an adjustment plate by controlling the deflector in accordance with an electron beam irradiation recipe, the adjustment plate detecting a current corresponding to the emitted electron beam; acquiring a current value detected from the adjustment plate; forming image data corresponding to the acquired current value; determining whether the electron-beam irradiated area is appropriate based on the formed image data; and updating the electron beam irradiation recipe when the electron-beam irradiated area is determined not to be appropriate.

A process chamber includes a housing providing a process space where plasma processing is performed, a first opening/closing device in a side wall of the housing, the first opening/closing device including a first frame and at least one opening/closing blade connected to the first frame, and a second opening/closing device on an outside of the side wall of the housing and on a same line as the first opening/closing device, the second opening/closing device including a second frame and an opening/closing door structure connected to the second frame, wherein the first opening/closing device and the second opening/closing device are configured to maintain a vacuum state of the process space.

A vacuum sample chamber for a particle and optical device includes on one surface thereof, an aperture through which a particle beam to be focused along an optical axis of particles such as electrons, ions and neutral particles is incident; and on the opposite surface thereof, a detachable sample holder through which light penetrates, thereby enabling a sample to be observed and analyzed by means of the particle beam and light. A sample chamber is capable of reducing observation time by maintaining a vacuum therein even when a sample is put into or taken out from a sample chamber of an electron microscope or focused ion beam observation equipment, and capable of obtaining an optical image on the outside thereof without inserting a light source or an optical barrel into the sample chamber. A light-electron fusion microscope comprising the sample chamber.

A substrate processing apparatus includes a chamber including a processing room for processing of a substrate using an introduced gas and an exhaust room for exhausting the gas in the processing room, a shield member provided near a side wall of the chamber to separate the processing room and the exhaust room and including a hole allowing the processing room and the exhaust room to communicate with each other, the shield member being driven in a vertical direction, and a hollow relay member connected to a pipe connected to an instrument outside the chamber and configured to be driven in a horizontal direction. When the shield member reaches an upper position, the relay member is driven inwardly of the chamber to be connected to the shield member at its inward end to allow the processing room and the pipe to communicate with each other through the hole.

According to one embodiment, an X-ray tube includes a cathode including a filament, an anode target, and an envelope. The cathode includes a metal lead wire supporter which is exposed outside the envelope, which is configured as a part of the envelope, and to which a lead wire as a power supplier to the filament is attached such that the lead wire passes both inside and outside of the envelope, and a metal filament supporter fixed on the lead wire supporter, being in contact with the lead wire supporter, and supporting the filament.