Exemplary methods of semiconductor processing may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may define one or more features along the substrate. The methods may include forming a plasma of the carbon-containing precursor within the processing region. The methods may include depositing a carbon-containing material on the substrate. The carbon-containing material may extend within the one or more features along the substrate. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include treating the carbon-containing material with plasma effluents of the hydrogen-containing precursor. The plasma effluents of the hydrogen-containing precursor may cause a portion of the carbon-containing material to be removed from the substrate.

A plasma processing apparatus disclosed includes a chamber, a substrate support, a radio-frequency power supply, and a bias power supply. The substrate support includes an electrode and is provided in the chamber. The radio-frequency power supply supplies radio-frequency power for generating plasma from a gas in the chamber. The bias power supply is electrically coupled to the electrode of the substrate support. The radio-frequency power supply is configured to supply the radio-frequency power in an ignition period in which the plasma is ignited in the chamber. The bias power supply is configured to sequentially apply a plurality of bias pulses, each of which has a negative voltage, to the electrode of the substrate support, and stepwisely or gradually increase absolute values of voltage levels of the plurality of bias pulses in the ignition period.

An apparatus having: a vacuum chamber for enclosing an article support, the article support configured to support an article such that a volume is defined between the article support and the article, the article support including a plurality of supporting protrusions configured to provide a plane of support for the article; a conduit for providing a fluid to the volume such that the fluid provides heat transfer between the article and the article support; and a controller for controlling the fluid supply to the volume, wherein the controller is configured to control a fluid supply unit to start removing the fluid substantially at a time the article reaches a stable temperature.

According to one embodiment, a plasma processing apparatus includes a chamber being possible to maintain an atmosphere more depressurized than atmospheric pressure, a plasma generator generating a plasma inside the chamber, a gas supplier supplying a gas into the chamber, a placement part positioned below a plasma generation region and placing a processed product thereon, a depressurization part depressurizing the chamber, and a power supply electrically connected to an electrode provided on the placement part via a bus bar. The bus bar is formed of an alloy of copper and gold. Gold is more included than copper on a surface side of the bus bar. The bus bar includes a first layer formed of copper and a second layer covering the first layer and formed of an alloy of copper and gold. Gold is more included than copper on a surface side of the second layer.

A plasma processing apparatus includes a plasma processing chamber, a substrate support disposed in the plasma processing chamber, an annular baffle plate disposed so as to surround the substrate support, the annular baffle plate having a plurality of openings, a first annular plate disposed below the annular baffle plate, a second annular plate disposed below the first annular plate, the second annular plate having an annular overlapping portion vertically overlapping with a part of the first annular plate, a pressure detector configured to detect a pressure in the plasma processing chamber, and at least one actuator configured to vertically move at least one of the first and second annular plates so as to change a distance between the first annular plate and the second annular plate based on the detected pressure.

An apparatus for atomic scale processing includes: a reactor having inner and outer surfaces; where at least a portion of the inner surfaces define an internal volume of the reactor; a fixture assembly positioned within the internal volume of the reactor having a surface configured to hold a substrate within the internal volume of the reactor; a vacuum pump in communication with the reactor; at least one reactor pressure control device; and a controller in communication with the at least one reactor pressure control device, where the controller is configured to activate and deactivate the at least one reactor pressure control device to increase and decrease the pressure within the internal volume of the reactor, where the increase in the pressure within the internal volume of the reactor increases the temperature of the substrate from an initial temperature.

An ion implanter includes a high energy multistage linear acceleration unit for accelerating an ion beam. The high energy multistage linear acceleration unit includes high frequency accelerators in a plurality of stages provided along a beamline through which the ion beam travels, and electrostatic quadrupole lens devices in a plurality of stages provided along the beamline. The electrostatic quadrupole lens device in each of the stages includes a plurality of lens electrodes facing each other in a radial direction perpendicular to an axial direction, and disposed at an interval in a circumferential direction, an upstream side cover electrode covering a beamline upstream side of the plurality of lens electrodes and including a beam incident port, and a downstream side cover electrode covering a beamline downstream side of the plurality of lens electrodes and including a beam exiting port.

A plasma processing system includes processing modules, a transfer device connected to the processing modules, and a control unit for controlling an oxygen partial pressure and a water vapor partial pressure in the transfer device. The control unit controls the oxygen partial pressure and the water vapor partial pressure in the transfer device to 127 Pa or less and 24.1 Pa or less, respectively. The processing modules include a first processing module for performing etching on the target object, a second processing module for performing surface treatment on the target object, and a third processing module for performing a deposition process on the target object. The second processing module performs the surface treatment using hydrogen radicals generated by a high frequency antenna. The high frequency antenna resonates at one half of a wavelength of a signal supplied from a high frequency power supply used in the processing system.

A coupling for connecting together vacuum-based analytical systems requiring to be vibrationally isolated, comprising: a tubular connector having a longitudinal axis, the connector comprising a first end for connection to a first analytical system and a flexible portion reducing transmission of vibrations and permitting displacement of the first analytical system in a direction transverse to the longitudinal axis of the connector; and a seal longitudinally separated from the flexible portion, for vacuum sealing between the connector and a second analytical system; wherein the connector contains ion optics for transmitting ions between the first and second analytical systems.

A charged particle apparatus includes: a specimen chamber which is maintained at vacuum and in which a specimen is disposed; a preliminary exhaust chamber that is connected to the specimen chamber via a vacuum gate valve; an exhaust device that exhausts the preliminary exhaust chamber; charged particle beam source an optical system; a detector; a transporting device that transports the specimen from the preliminary exhaust chamber to the specimen chamber; and a control unit. The control unit performs: adjustment processing in which at least one of the optical system and the detector is adjusted in a state where the specimen is housed in the preliminary exhaust chamber; and transporting processing which is performed after the adjustment processing and in which the vacuum gate valve is opened and the transporting device transports the specimen to the specimen chamber.