An ion implantation system having a grid assembly. The system includes a plasma source configured to provide plasma in a plasma region; a first grid plate having a plurality of apertures configured to allow ions from the plasma region to pass therethrough, wherein the first grid plate is configured to be biased by a power supply; a second grid plate having a plurality of apertures configured to allow the ions to pass therethrough subsequent to the ions passing through the first grid plate, wherein the second grid plate is configured to be biased by a power supply; and a substrate holder configured to support a substrate in a position where the substrate is implanted with the ions subsequent to the ions passing through the second grid plate.

An apparatus is provided for microscopy, inspection, or analysis of a sample. The apparatus has a vacuum chamber and a charged-particle beam column in the vacuum chamber to direct a charged-particle beam onto a sample. The charged-particle beam column includes a charged-particle beam source to generate a charged-particle beam and charged-particle beam optics to direct the charged-particle beam onto the sample. The apparatus has a detector to detect radiation emanating from the sample to generate an image. A cartridge is provided to support the sample in the path of the charged-particle beam in the vacuum chamber. The cartridge is mechanically decoupled from the environment external to the vacuum chamber. A controller is provided to analyze the detected radiation to generate an image of the sample.

A sample exchange device includes a first transport mechanism that includes a grip portion that grips a sample holding member and transports a sample holding member to a sample exchange chamber, a cooling unit that cools the sample exchange chamber, fiber sensors that detect whether or not the grip portion of the first transport mechanism grips the sample holding member in the sample exchange chamber, and a control unit. The control unit turns on the fiber sensors when the grip portion of the first transport mechanism enters the sample exchange chamber and turns off the fiber sensors after it is detected whether or not the grip portion of the first transport mechanism grips the sample holding member.

Disclosed herein is a module for supporting a device configured to manipulate charged particle paths in a charged particle apparatus, the module comprising: a support arrangement configured to support the device, wherein the device is configured to manipulate a charged particle path within the charged particle apparatus; and a support positioning system configured to move the support arrangement within the module; wherein the module is arranged to be field replaceable in the charged particle apparatus.

A charged particle beam apparatus includes: a specimen chamber; a specimen holder that is disposed in the specimen chamber; a specimen exchange chamber that is connected to the specimen chamber; a transporting mechanism that transports a specimen between the specimen chamber and the specimen exchange chamber; a first temperature sensor that measures a temperature of the specimen holder; a second temperature sensor that measures a temperature of the transporting mechanism; and a control unit. The control unit: calculates a temperature difference between the specimen holder and the transporting mechanism based on the temperature of the specimen holder and the temperature of the transporting mechanism when the control unit has received an instruction to transport a specimen; determining whether the temperature difference is a threshold or more; and stopping transportation of a specimen when the control unit has determined that the temperature difference is the threshold or more.

Methods, systems, apparatuses, and computer programs are presented for controlling etch rate and plasma uniformity using magnetic fields. A substrate processing apparatus includes a vacuum chamber including a processing zone for processing a substrate. The apparatus further includes a magnetic field sensor configured to detect a signal representing a residual magnetic field associated with the vacuum chamber. At least one magnetic field source is configured to generate one or more supplemental magnetic fields through the processing zone of the vacuum chamber. A magnetic field controller is coupled to the magnetic field sensor and the at least one magnetic field source. The magnetic field controller is configured to adjust at least one characteristic of the one or more supplemental magnetic fields, causing the one or more supplemental magnetic fields to reduce the residual magnetic field to a pre-determined value.

There is provided a charged particle beam system capable of determining the type of each cartridge precisely. An electron microscope that embodies the charged particle beam system includes a discriminator for determining the type of each cartridge based on the range or distance measured by a laser range finder. Plural cartridges are received in a magazine. The laser range finder measures the range to a selected one of the plural cartridges which is placed in a measurement position. A first cartridge of a first type included in the plural cartridges has a first measurement surface at a first distance to the laser range finder when placed in the measurement position. A second cartridge of a second type has a second measurement surface at a second range to the laser range finder when placed in the measurement position.

A method for altering surface charge on an insulating surface of a first sample includes generating first plasma inside a plasma source, causing the first plasma to diffuse into a first vacuum chamber to generate second downstream plasma, immersing the first sample in the second downstream plasma, and applying a first bias voltage to a conductive layer of the first sample, or applying a first bias voltage to a metal holder that holds the first sample.

A system, method, and apparatus for heating and cooling a component in chamber enclosing a chamber volume. Vacuum and purge gas ports are in fluid communication with the chamber volume. A heater apparatus selectively heats the heated apparatus to a process temperature. A vacuum valve provides selective fluid communication between a vacuum source and the vacuum port. A purge gas valve provides selective fluid communication between a purge gas source for a purge gas and the purge gas port. A controller controls the heater apparatus, vacuum and purge gas valves and to selectively flow the purge gas to the chamber volume when an equipment-safe temperature is reached. When an operator-safe temperature is reached, access to the chamber volume through an access port by an operator is permitted.

Various approaches are provided for contamination-free vacuum transfer of samples. As one example, an apparatus includes a compartment configured to store multiple samples held by a cartridge removably coupled to the compartment, a sample port for transferring the cartridge between a charged particle system and a position within the compartment, and a valve configured to seal the compartment at vacuum pressure during transport of the multiple samples between charged particle systems. In this way, samples such as lamellae may be transferred between charged particle systems while maintaining the samples at vacuum pressure, thereby reducing the possibility of sample contamination during sample transfer.