The ion beam irradiation apparatus 10 includes a vacuum vessel 18 having an internal space R where the ion beam IB taken out from the ion source 11 pass in the first direction D1. The vacuum vessel 18 has a recess 22 that brings the internal space R extended in a second direction D2 intersecting the first direction D1 in a portion of the area between the ion source 11 and the mass spectrometer 14.

A modular ultra-high vacuum (UHV) electron microscope for investigating a sample, according to the present disclosure includes a UHV chamber configured to reach and maintain an ultra-high vacuum within the UHV chamber, a UHV stage to hold the sample being investigated, a charged particle source configured to emit an electron beam toward the sample, and an optical column configured to direct the plurality of electrons to be incident on the sample. The modular UHV electron microscopes further include a carousel vacuum bay configured to reach and maintain an UHV independently of the UHV chamber, and which is connected to the UHV chamber via a port and contains at least one device manipulator. Each of the device manipulators comprise an attachment site for a microscope device, and are configured to, selectively translate attached microscope devices between the carousel vacuum bay and the UHV chamber via the valve.

An apparatus includes an ion chamber and a valve assembly. The ion chamber may include a housing enclosing a gas and one or more electrodes. The valve assembly is coupled to the ion chamber allowing control of replacement of the gas within the housing.

A substrate processing system is installable in a small installation area. The substrate processing system includes one or more process modules and a vacuum transfer module. At least one of the one or more process modules and the vacuum transfer module at least partially overlap with each other as viewed from above.

A method of processing a substrate includes: providing a substrate having one or more mandrels comprising a mandrel material, wherein a layer of a spacer material coats horizontal surfaces and sidewalls of the one or more mandrels; and etching and completely removing the layer of the spacer material from the horizontal surfaces of the one or more mandrels and thereby exposing the mandrel material, without completely removing the spacer material residing at the sidewalls of the one or more mandrels. The etching includes exposing the substrate to a plasma formed using a mixture comprising a first gas and a polymer-forming gas, and wherein the etching comprises forming a polymer on the substrate. Polymer-forming gas may include carbon (C) and hydrogen (H).

At timing t0, a brake gas (raw material gas) starts to be supplied to an ion beam generator, and the brake gas is fed into a turbo molecular pump. After timing t1, a vent valve is opened intermittently to feed atmospheric air into the turbo molecular pump. The brake gas may be different from the raw material gas. The brake gas is supplied using a gas supply system.

Embodiments of this application discloses a substrate processing apparatus comprising: a vacuum transfer module having a vacuum transfer space and an opening; a wall unit attached to the opening and including a first gate valve and a second gate valve; a substrate processing module attached to the wall unit and having a substrate processing space communicating with the vacuum transfer space via the first gate valve; and a ring stocker attached to the wall unit and having a storage space for storing at least one annular member used in a plasma processing module. Moreover, the apparatus further includes a transfer mechanism disposed in the vacuum transfer space and transfers a substrate between the vacuum transfer space and the substrate processing space through the first gate valve and also transfers at least one annular member between the vacuum transfer space and the storage space via the second gate valve.

The present application discloses a vacuum pumping valve for semiconductor equipment and a vacuum control system, wherein the vacuum pumping valve includes a driving device, a base, a rotary disk, and a set of blades, wherein the blades are mounted between the base and the rotary disk, the rotary disk driven by the driving device drives the blades to move synchronously on the base, the moving blades together form a pumping orifice, the shape of the pumping orifice is a regular polygon coaxial with the rotary disk, and the opening of the pumping orifice is adjustable by means of synchronous movement of the blades. In the present application, the effective passage area of the gas flow and vacuum pressure of the reaction chamber can be controlled, and the problem of an asymmetric gas plasma distribution can be effectively resolved.

An apparatus includes an ion chamber and a valve assembly. The ion chamber may include a housing enclosing a gas and one or more electrodes. The valve assembly is coupled to the ion chamber allowing control of replacement of the gas within the housing.

Tin oxide film on a semiconductor substrate is etched selectively in a presence of silicon (Si), carbon (C), or a carbon-containing material (e.g., photoresist) by exposing the substrate to a process gas comprising hydrogen (H.sub.2) and a hydrocarbon. The hydrocarbon significantly improves the etch selectivity. In some embodiments an apparatus for processing a semiconductor substrate includes a process chamber configured for housing the semiconductor substrate and a controller having program instructions on a non-transitory medium for causing selective etching of a tin oxide layer on a substrate in a presence of silicon, carbon, or a carbon-containing material by exposing the substrate to a plasma formed in a process gas that includes H.sub.2 and a hydrocarbon.