The present disclosure provides a process chamber and a semiconductor process apparatus. The process chamber is applied in the semiconductor process apparatus and includes a chamber body, a base, and a chuck assembly. The reaction chamber is formed in the chamber body. The base is located in the reaction chamber. The chuck assembly is connected to the base and configured to carry a wafer. The base includes a base body and a plurality of cantilevers. The plurality of cantilevers are arranged evenly along the circumference of the base body. Each cantilever is connected to the inner wall of the chamber body and the outer wall of the base body. The chamber body, the base body, and the cantilever have an integral structure and are made of a material having the electrical conductivity and the thermal conductivity.

A workstation is described for mounting specimens into a cryotransfer holder at cryogenic temperature. The workstation allows rotation about the cryotransfer holder axis to improve access to the sample placement area on the holder and to facilitate easy removal and retrieval of the sample after imaging. The cryotransfer holder includes a cylindrical dewar configured to maintain a constant center of mass about the holder axis regardless of orientation of the dewar.

A cryogenic heat transfer system including a platen supported by a rotatable shaft, a housing surrounding a portion of the rotatable shaft, the housing including an annular heat sink surrounding the rotatable shaft and defining a heat transfer gap between the heat sink and the rotatable shaft, the heat sink including a fluid conduit extending therethrough for circulating a first cooling fluid through the heat sink, a first dynamic seal arrangement extending from a first axial end of the heat sink and surrounding the rotatable shaft, and a second dynamic seal arrangement extending from a second axial end of the heat sink opposite the first axial end and radially surrounding the rotatable shaft, wherein the heat sink and the first and second dynamic seal arrangements define a fluidically sealed volume surrounding the rotatable shaft, the fluidically sealed volume containing a second cooling fluid.

A sample holder for electron microscopy of air-sensitive samples for use in electron microscopy incorporates a housing and a closure assembly. The closure assembly comprises a lid comprising at least one closure arm receiving portions recessed within a flat, planar upper surface thereof. The housing comprises one or more closure arm(s) corresponding to one or more closure arm receiving portion(s). In a fully closed position, the closure arm(s) share contact with the closure arm receiving portion(s). The lid is flexibly coupled to a motor cover plate which can be actuated by a motor assembly configured to open and close the lid. The sample holder also includes an elevator assembly with a vertically adjustable sample stage which sits below the lid. The sample stage is vertically adjusted by actuation of a bellows assembly which sits beneath the sample stage.

Provided are a wafer support unit, in which a dam is installed outside an O-ring to prevent the O-ring from being etched, and a wafer treatment system including the wafer support unit. The wafer treatment system includes: a housing; a shower head introduces a process gas for etching a wafer into the housing; and a support unit includes an electrostatic chuck on which the wafer is mounted, a base supporting the electrostatic chuck, and a focus ring installed on side surfaces of the electrostatic chuck, wherein the support unit includes: a fixing component which fixes the focus ring to the base; a sealing component which is disposed between the focus ring and the base to seal a circumference of a fastening component; and a dam component which is installed outside the sealing component to prevent the sealing component from being etched by the process gas.

Apparatuses and systems for pedestals are provided. An example pedestal may have a body with an upper annular seal surface that is planar, perpendicular to a vertical center axis of the body, and has a radial thickness, a lower recess surface offset from the upper annular seal surface, and a plurality of micro-contact areas (MCAs) protruding from the lower recess surface, each MCA having a top surface offset from the lower recess surface by a second distance less, and one or more electrodes within the body. The upper annular seal surface may be configured to support an outer edge of a semiconductor substrate when the semiconductor substrate is being supported by the pedestal, and the upper annular seal surface and the tops of the MCAs may be configured to support the semiconductor substrate when the semiconductor substrate is being supported by the pedestal.

A first x-y translation stage, a second x-y translation stage, and a chuck are disposed in a chamber. The chuck is situated above and coupled to the second x-y translation stage, which is situated above and coupled to the first x-y translation stage. The chuck is configured to support a substrate and to be translated by the first and second x-y stages in x- and y-directions, which are substantially parallel to a surface of the chuck on which the substrate is to be mounted. A first barrier and a second barrier are also disposed in the chamber. The first barrier is coupled to the first x-y translation stage to separate a first zone of the chamber from a second zone of the chamber. The second barrier is coupled to the second x-y translation stage to separate the first zone of the chamber from a third zone of the chamber.

A cryotransfer holder for mounting a specimen held at cryogenic temperature in an electron microscope is described. The holder includes a cylindrical dewar configured to maintain a constant center of mass about the holder axis regardless of orientation of the dewar. The holder further includes a sample shutter control mechanism that can be decoupled from the shutter to reduce vibration during imaging. There is also described a workstation for mounting specimens into the cryotransfer holder at cryogenic temperature. The workstation allows rotation about the cryotransfer holder axis to improve access to the sample placement area on the holder and to facilitate easy removal and retrieval of the sample after imaging.

An ion beam etching system includes an etching cavity, an etching electrode, and an electrode displacement apparatus used for enabling the electrode to change a working position in the etching cavity. The electrode displacement apparatus includes a dynamic sealing mechanism, a dynamic electrode balance counterweight mechanism, an electrode displacement transmission mechanism, and an electrode displacement driving mechanism. The etching cavity includes a cavity and a cavity cover connected with the cavity. The cavity is of an irregular shape. The cavity includes a partial cylindrical body, a side plate, a tapered transition portion, and a bottom plate. The partial cylindrical body is laterally sealed by means of the side plate. The bottom plate is connected to an end of the partial cylindrical body by means of the tapered transition portion and seals the end of the partial cylindrical body.

The present disclosure provides an electrostatic chuck and a plasma processing apparatus. The electrostatic chuck includes: a base; a heating layer disposed on the base; an insulating layer disposed on the heating layer; and an annular-shaped protection member surrounding an outer peripheral wall of the heating layer and detachably disposed on an outer side of the heating layer. An outer diameter of the heating layer is smaller than both an outer diameter of the base and an outer diameter of the insulating layer. The electrostatic chuck and the plasma processing apparatus provided by the present disclosure not only protects the heating layer during the manufacturing process, but also can be separately replaced when the annular-shaped protection member is damaged. The heating layer is unaffected during the replacement process. Thus, the electrostatic chuck has the characteristics of long lifespan, and low maintenance and replacement cost, etc.