A method of depositing a layer on a semiconductor workpiece is disclosed. The method includes placing the semiconductor workpiece on a wafer chuck in a processing chamber, introducing a first precursor into the processing chamber, introducing a second precursor into the processing chamber, and while the second precursor is in the processing chamber, applying radiation to the semiconductor workpiece, whereby a surface of the semiconductor workpiece is heated. The method also includes, while the second precursor is in the processing chamber, applying a voltage bias to the wafer chuck.

An electrostatic chuck includes a ceramic dielectric substrate, a base plate, a bonding part, a gas inlet path, a counterbore part, and a ceramic porous part. The bonding part is located between the ceramic dielectric substrate and the base plate. The gas inlet path extends through the ceramic dielectric substrate, the base plate, and the bonding part. The gas inlet path includes a first hole part, a second hole part, and a third hole part. The first hole part is positioned at the ceramic dielectric substrate. The second hole part is positioned at the base plate. The third hole part is positioned at the bonding part. The counterbore part is located in at least one of the first hole part or the second hole part. The ceramic porous part is located in the counterbore part. The ceramic porous part includes an exposed surface exposed in the third hole part.

Provided is a charged particle beam system capable of reducing the force applied to a sample when a chuck device grips the sample. The charged particle beam system is typified by an electron microscope including a sample chamber, a sample exchange chamber connected to the sample chamber, a sample container capable of being removably attached in the sample exchange chamber, and a transport device for transporting the sample between the sample container and the sample exchange chamber. The transport device includes the chuck device for gripping the sample, a drive mechanism for moving the chuck device in a given direction, a mechanical driver for actuating the chuck device, and a power transmission mechanism for transmitting power of the mechanical driver to the chuck device. The power transmission mechanism includes a shaft and a resilient member that elastically deforms when a force in the given direction is applied to the shaft.

During electron beam imaging of a semiconductor wafer, the electron beam is adjusted to a first electron dose/nm.sup.2/time value below a damage threshold for an image frame grab of a site on the semiconductor wafer. Then the electron beam is adjusted to a second electron dose/nm.sup.2/time value different from the first electron dose/nm.sup.2/time value for a second image frame grab of the site. The second electron dose/nm.sup.2/time value can be above the damage threshold.

The inventive concept provides a support unit for supporting a substrate. The support unit for supporting the substrate includes a first plate; heating elements provided at the first plate for controlling a temperature of respective region of the substrate; a power supply module configured to generate at least two powers having a different frequency; a power line transmitting a power generated by the power supply module to the heating elements; and filters installed at the power line to selectively filter a power supplied to the heating elements.

A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EU mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

An electrostatic-chuck heater is a Johnsen-Rahbek electrostatic-chuck heater and is used in a process of forming a conductive film on a wafer. The electrostatic-chuck heater includes a disc-shaped ceramic base including an electrostatic electrode and a heating resistor, and a hollow shaft attached to a side of the ceramic base that is opposite a wafer-mounting surface. A protruding ring is provided on the wafer-mounting surface and having an outside diameter smaller than a diameter of the wafer. A through-hole extends in a peripheral wall of the hollow shaft from a lower end through to an area of the wafer-mounting surface that is on an inner side with respect to the protruding ring. The through-hole allows gas to be supplied from the lower end of the hollow shaft into a below-wafer space enclosed by the wafer-mounting surface, the protruding ring, and the wafer mounted on the wafer-mounting surface.

An electrostatic chuck for a substrate processing system is provided and includes a baseplate, an intermediate layer disposed on the baseplate, and a top plate. The top plate is bonded to the baseplate via the intermediate layer and is configured to electrostatically clamp to a substrate. The top plate includes a monopolar clamping electrode and seals. The monopolar clamping electrode includes a groove opening pattern with coolant gas groove opening sets. The seals separate coolant gas zones. The coolant gas zones include four or more coolant gas zones. Each of the coolant gas zones includes distinct coolant gas groove sets. The top plate includes the distinct coolant gas groove sets. Each of the distinct coolant gas groove sets has one or more coolant gas supply holes and corresponds to a respective one of the coolant gas groove opening sets.

A structure comprising a substrate and a component which forms involatile metal etch products is plasma etched. A structure comprising a substrate and a component which forms involatile metal etch products is provided. The structure is positioned on a support within a chamber having a first gas inlet arrangement comprising one or more gas inlets and a second gas inlet arrangement comprising one or more gas inlets. The structure is etched by performing a first plasma etch step using a first etch process gas mixture which is only introduced into the chamber through the first gas inlet arrangement. The structure is further etched by performing a second plasma etch step using a second etch process gas mixture which is only introduced into the chamber through the second gas inlet arrangement.

A placing table includes an edge ring disposed to surround a substrate, the edge ring having a first recess portion at a lower portion thereof; an electrostatic chuck having a first placing surface on which the substrate is placed, a second placing surface on which the edge ring is placed, and an electrode embedded therein to face the second placing surface; an annular member disposed to surround the electrostatic chuck, the annular member having a second recess portion; and an elastic member disposed in a space surrounded by the first recess portion, the electrostatic chuck and the second recess portion.