Provided is a member for a plasma processing apparatus consisting of a tungsten carbide phase. The member includes at least one type of atom selected from the group consisting of a Fe atom, a Co atom, and a Ni atom, in which the total content of the atoms is in a range of 30 to 3300 atomic ppm.

Disclosed herein is a temperature actuated valve, including a stationary member and a movable member, wherein the stationary member is configured to receive the movable member. A first flow path is defined between an outer surface of the stationary member and an inner surface of a housing and a second flow path defined by and within the movable member. The temperature actuated valve further includes at least one temperature actuated member having a first end seated against a base of the stationary member and a second end seated against a base of the movable member. The temperature actuated valve further includes a bias member having a first end connected to the base of the stationary member and a second end connected to the base of the movable member, the at least one temperature actuated member configured to compress at a first temperature and expand at a second temperature.

The present disclosure relates to a stage apparatus comprising: an object table configured to hold a substrate, the object table comprising an electrode configured to be charged by a power source and an electrical connection configured to electrically connect the electrode to the power source, and an electric field shield configured to shield at least a part of the electrical connection.

Provided is a charged particle beam device capable of improving the accuracy of measurement and processing. The charged particle beam device includes an electrostatic chuck that adsorbs an inspection object, a voltage generation unit that generates a voltage to be supplied to the electrostatic chuck, and a state determination unit that determines a state of the inspection object. Here, the state determination unit includes a current waveform simulation unit that simulates a time-series change of an electrostatic chuck current flowing through the voltage generation unit when the electrostatic chuck normally adsorbs the inspection object, a difference integration unit that acquires an integration value of a difference between a time-series change of a simulation current generated by the current waveform simulation unit and the time-series change of the electrostatic chuck current flowing through the voltage generation unit, and a difference determination unit that determines an adsorption state of the inspection object and a shape feature of the inspection object based on the integration value of the difference.

A method, a non-transitory computer readable medium and a device. The method may include (a) introducing a voltage difference between an absolute value of a negative pole of the electrostatic chuck and an absolute value of a positive pole of the electrostatic chuck, the introducing occurs while the wafer is supported by the electrostatic chuck and is contacted by one or more conductive contact pins of the electrostatic chuck; (b) monitoring, by an electrostatic sensor that comprises a sensing element, a charge at a point of measurement located at a front side of the wafer, at different points of time that follow a start of the introducing of the voltage difference, to provide monitoring results; and (c) determining an electrical parameter of the contact between the wafer and the electrostatic chuck, based on the monitoring results.

The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for adjusting a ribbon beam angle of an ion implantation system. An exemplary ion implantation system includes an ion source configured to generate a ribbon beam, a wafer chuck configured to hold a wafer during implantation by the ribbon beam, a dipole magnet disposed between the ion source and the wafer chuck, and a controller. The dipole magnet includes at least two coils configured to adjust a ribbon beam angle of the ribbon beam at one or more locations along a path of the ribbon beam between the ion source and the wafer held in the wafer chuck. The controller is configured to control the ion source, the wafer chuck, and the dipole magnet.

A substrate support including a body, a heating element, a first radio frequency filter, and a second radio frequency filter. The body is configured to support a substrate. The heating element is at least partially implemented in a first portion of the body. The first radio frequency filter is connected to an input of the heating element and at least partially implemented in a second portion of the body and connected to the heating element by a first via. The second radio frequency filter is connected to an output of the heating element and at least partially implemented in the second portion or a third portion of the body.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber providing a treating space; a support unit supporting a substrate at the treating space; a gas supply unit configured to introduce a gas to the treating space; a plasma source configured to provide an energy for exciting a gas introduced to the treating space to a plasma; an exhaust unit configured to exhaust an atmosphere within the treating space to an outside of the treating space; and a heating source positioned above the support unit, and wherein the heating source applies a heating energy in a pulse form to the substrate.

A sample holder (19) includes a base portion (41), a sample carrying portion (42), a rotation guide portion (43), a cooling stage (46), a connection member (47), a first support portion, and a fixing guide portion (48). The base portion (41) is configured to be fixed to a stage (12), which is configured to be driven to rotate by a stage driving mechanism (13). The rotation guide portion (43) is configured to guide synchronous rotation of the base portion (41) and the sample carrying portion (42). The cooling stage (46) is configured to cool a sample (S). The connection member (47) is configured to be connected to the cooling stage (46). The first support portion is configured to support the base portion (41), which is configured to be driven to rotate by the stage (12).

A substrate processing apparatus, including a processing chamber including a first internal space and a second internal space arranged in a vertical direction, the first internal space being configured to receive process gas to generate plasma; an induction electrode configured to divide the processing chamber, and having a plurality of through-holes arranged to connect the first internal space and the second internal space, wherein the plurality of through-holes are configured to induce an ion beam extracted from ions included in the plasma generated in the first internal space; a radical supply located in the second internal space, and including a reservoir configured to receive chemical liquid in which an object to be processed is immersed, and a lower electrode configured to apply nanopulses to the reservoir to generate radicals from the chemical liquid; and a chemical liquid supply configured to supply the chemical liquid to the reservoir.