Apparatuses and methods for aligning lamella to charged particle beams based on a volume reconstruction are disclosed herein. An example method at least includes forming a reconstructed volume of a portion of a sample, the sample including a plurality of structures, and the reconstructed volume including a portion of the plurality of structures, performing, over a range of angles, a mathematical transform on each plane of a plurality of planes of the reconstructed volume, and based on the mathematical transform on each plane of the plurality of planes, determining a target orientation of the sample within the range of angles, wherein the target orientation aligns the plurality of structures parallel to an optical axis of a charged particle beam.

A pattern inspection apparatus includes a column to scan a substrate on which a pattern is formed, using multi-beams composed of a plurality of electron beams, a stage to mount the substrate thereon and to be movable, a detector to detect secondary electrons emitted from the substrate because the substrate is irradiated with the multi-beams, and a drive mechanism to move the detector in order to follow movement of the stage.

A method and apparatus are provided for aligning a sample in a charged particle beam system. The charged particle beam is directed toward the sample to obtain a sample diffraction pattern. The sample diffraction pattern is compared with reference diffraction patterns having known misalignments to determine which reference pattern most closely matches the sample pattern. The known alignment of the best-matching reference diffraction pattern is used to correct the tilt of the sample. The “patterns” compared can be lists of bright spots with corresponding intensities rather than images.

To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. The pattern image is moved along a path on the target over a region to be exposed, and this movement defines a number of stripes covering said region in sequential exposures and having respective widths. The number of stripes is written in at least two sweeps which each have a respective general direction, but the general direction is different for different sweeps, e.g. perpendicular to each other. Each stripe belongs to exactly one sweep and runs substantially parallel to the other stripes of the same sweep, namely, along the respective general direction. For each sweep the widths, as measured across said main direction, of the stripes of one sweep combine into a cover of the total width of the region.

In corner sections of first to fourth quadrants whose origin point is a center of an upper surface of a stage, three each of two-dimensional heads are provided. The three each of two-dimensional heads include one first head and two second heads. The stage is driven, while measuring a position of the stage using three first heads that face a two-dimensional grating of a scale plate provided above the stage from the four first heads, and during the driving, difference data of measurement values of the two second heads with respect to the first head in a measurement direction are taken in for head groups to which the three first heads belong, respectively, and using the difference data, grid errors are calibrated.

Techniques for yield management in semiconductor inspection systems are described. According to one aspect of the present invention, columns of sensing mechanism are configured with different functions, weights and performances to inspect a sample to significantly reduce the time that would be otherwise needed when all the columns were equally applied.

The invention relates to a charged particle beam exposure apparatus configured to expose cut patterns or via patterns on a substrate having a plurality of line patterns 81a arranged on an upper surface of the substrate at a constant pitch by irradiating the substrate with a plurality of charged particle beams B1 to Bn while moving a one-dimensional array beam A1 in an X direction parallel to the line patterns 81a, the one-dimensional array beam A1 being a beam in which the charged particle beams B1 to Bn are arranged in an Y direction orthogonal to the line patterns 81a.

The present invention provides an electrode assembly comprising two or more electrodes arranged around a primary axis forming a non-cylindrical channel space. General electronic apparatus/device, particularly apparatus of charged-particle beam such as electron microscope, may use the electrode assembly to create an optimized pattern of electrical field within non-cylindrical channel space. When the electrode assembly is used as a beam deflector in a magnetic objective lens, the electrical field within the central channel space can be co-optimized with the magnetic field for reducing aberration(s) such as distortion, field curvature, astigmatism, and chromatic aberration, after the beam passes through the central channel space.

A method of manufacturing a semiconductor device includes: preparing a substrate processing apparatus including a substrate process chamber having a plasma-generation space where a nitrogen-containing gas is plasma-exited and a process space where a substrate is mounted in communication with the plasma-generation space, an inductive coupling structure configured by a coil and an impedance matching circuit, wherein electric field combining the coil and the circuit has a length of an integer multiple of a wavelength of an high-frequency power, and a table to mount the substrate under a lower end of the coil; mounting the substrate on the table; supplying the nitrogen-containing gas into the chamber; starting a plasma excitation of the nitrogen-containing gas by applying the high-frequency power to the coil; and nitriding a surface of the substrate with active species containing a nitrogen element at an internal pressure of the chamber ranging from 1 to 100 Pa.

A positioning system for an electron microscope includes a first carriage comprising a holder for holding a workpiece and a second carriage. The first carriage being coupled to one or more first drive units configured to position the workpiece along first, second, and third axes, and along a first tilt axis. The second carriage housing the one or more first drive units and being coupled to one or more second drive units configured to position the workpiece along a second tilt axis.