(Task) To repeatedly perform an operation of extracting a sample piece formed by processing a sample with an ion beam and of transferring the extracted sample piece to a sample piece holder. (Problem Solving Means) A charged particle beam apparatus includes a computer that sets a shaping processing region including a bottom portion of sample piece in a thickness direction of the sample piece corresponding to a depth direction at the time of processing a sample after a needle holds the sample piece, and controls a focused ion beam irradiation optical system to irradiate the shaping processing region with a focused ion beam to thereby shape the sample piece.

System and methods are described for directly measuring mechanical properties of a sample while concurrently imaging the sample using a scanning beam microscope (e.g., a scanning electron microscope (SEM)). The system includes a clamping mount configured to hold the sample and a load cell positioned proximal to the clamping mount and configured to provide a direct, real-time measurement of force on the sample end. The system further includes a controllable probe configured to apply a force to the sample. In some embodiments, the sample load cell is tiltably couplable to a sample held by the clamping mount and the controllable probe is moveable between a plurality of different mounting positions relative to the load cell.

The invention relates to a charged particle microscope (CPM) that at least includes a sample holder, for holding a sample, and a manipulator device arranged for transferring a lamella created in said sample out of said sample, wherein said manipulator device comprises a first elongated manipulator member with a first outer end, and a second elongated manipulator member with a second outer end. The outer ends are movable for mechanically gripping and releasing said lamella. In embodiments, the elongated manipulator members comprise off-set parts that increase manoeuvrability, accessibility, and monitorability of the manipulator device during use.

System for performing in-line nanoprobing on semiconductor wafer. A wafer support or vertical wafer positioner is attached to a wafer stage. An SEM column, an optical microscope and a plurality of nanoprobe positioners are all attached to the ceiling. The nanoprobe positioners have one nanoprobe configured for physically contacting selected points on the wafer. A force (or touch) sensor measures contact force applied by the probe to the wafer (or the moment) when the probe physically contacts the wafer. A plurality of drift sensors are provided for calculating probe vs. wafer alignment drift in real-time during measurements.

A system and method is provided for of characterizing nanostructured surfaces. A nanostructure sample is placed in an SEM chamber and imaged. The system and method locates one of the nanostructures using images from the SEM imaging, excises a top portion of the nanostructure, places said top portion on a substrate such that the nanostructures are perpendicular to the substrate and a base of the top portion contacts the substrate, performs high energy ion beam assisted deposition of metal at the base to attach the top portion to the substrate, SEM imaging the top portions in the SEM chamber, determining coordinates of the top portions relative to the substrate from the SEM imaging of the top portions, placing the substrate in an AFM chamber, and performing AFM imaging of the top portions using the coordinates previously determined.

A charged particle beam device includes a sample stage on which a sample is mounted and moved, a charged particle beam irradiation optical system irradiating with a charged particle beam, a sample piece movement unit holding and conveying a sample piece extracted from the sample, a holder fixing table holding a sample piece holder to which the sample piece is transferred, and a computer. When allowing the sample piece movement unit to approach the sample piece, the computer selects a matching region for performing image matching between a reference image obtained in advance by irradiating the sample with the charged particle beam and a comparison image obtained by irradiating the sample, which is an extraction target for the sample piece, with the charged particle beam.

An apparatus is disclosed for use in a charged particle instrument which defines an inner volume therein. The apparatus comprises an adaptor (22) having a first portion adapted for attachment to a part (20) of a gas injection system (18) of a charged particle instrument which is located within an inner volume of such an instrument; and a second portion arranged to receive a tool (24) adapted for interaction with a sample (14) located in the inner volume of such an instrument.

Methods and systems for creating attachments between a sample manipulator and a sample within a charged particle systems are disclosed herein. Methods include translating a sample manipulator so that it is proximate to a sample, and milling portions of the sample manipulator such that portions are removed. The portion of the sample manipulator proximate to the sample is composed of a high sputter yield material, and the high sputter yield material may be the material milled with the charged particle beam such that it is removed from the sample manipulator. According to the present disclosure, the portions of the sample manipulator are milled such that at least some of the removed high sputter yield material redeposits to form an attachment between the sample manipulator and the sample.

A system and method is provided for of characterizing nanostructured surfaces. A nanostructure sample is placed in an SEM chamber and imaged. The system and method locates one of the nanostructures using images from the SEM imaging, excises a top portion of the nanostructure, places said top portion on a substrate such that the nanostructures are perpendicular to the substrate and a base of the top portion contacts the substrate, performs high energy ion beam assisted deposition of metal at the base to attach the top portion to the substrate, SEM imaging the top portions in the SEM chamber, determining coordinates of the top portions relative to the substrate from the SEM imaging of the top portions, placing the substrate in an AFM chamber, and performing AFM imaging of the top portions using the coordinates previously determined.

To automatically repeat an operation of isolating a sample piece, which is formed by processing a sample with an ion beam, and transferring the sample piece to a sample piece holder, a charged particle beam device includes a computer configured to perform control so that, without rotating a needle with which the sample piece is fixed to the sample piece holder, a deposition film deposited on the needle is irradiated with a charged particle beam from a charged particle beam irradiation optical system.