A focused ion beam apparatus (100) includes: a focused ion beam lens column (20); a sample table (51); a sample stage (50); a memory (6M) configured to store in advance three-dimensional data on the sample table and an irradiation axis of the focused ion beam, the three-dimensional data being associated with stage coordinates of the sample stage; a display (7); and a display controller (6A) configured to cause the display to display a virtual positional relationship between the sample table (51v) and the irradiation axis (20Av) of the focused ion beam, which is exhibited when the sample stage is operated to move the sample table to a predetermined position, based on the three-dimensional data on the sample table and the irradiation axis of the focused ion beam.

A focus adjustment method for a charged particle beam device having a magnetic field lens used for focus adjustment and an astigmatism corrector includes: acquiring a plurality of first images by varying an excitation current of the magnetic field lens within a focus search range, and determining a reference value of the excitation current; removing hysteresis from the magnetic field lens by setting the excitation current of the magnetic field lens outside the focus search range before and after varying the excitation current of the magnetic field lens within the focus search range; and acquiring a plurality of second images by varying the excitation current of the magnetic field lens using the reference value as a reference and varying a stigma correction value of the astigmatism corrector at each excitation current, and then determining optimum values of the excitation current and the stigma correction value.

Two types of operational parameters are used in a particle beam microscope. First parameters influence the image quality, and have settings that are alterable by a user in view of obtaining a better image quality. Second parameters characterize the mode of operation, and the image quality becomes poorer when these change. A mode of operation of the particle beam microscope includes: registering of settings of the first parameters and the second parameters, which the user undertakes in a period of time; analysing a plurality of recorded settings of the first parameters and of the second parameters; determining settings of the first parameters which are advantageous in view of the image quality on the basis of the current settings of the second parameters; and setting the determined advantageous settings of the first parameters.

The present invention relates to an autofocus technique for a scanning electron microscope using interlaced scan. The autofocus method for a scanning electron microscope, includes: generating a thinned image of a pattern (160) formed on a surface of a specimen by repeatedly scanning the specimen with an electron beam while shifting a scanning position of the electron beam by predetermined plural pixels in a direction perpendicular to a scanning direction; performing said generating a thinned image of the pattern (160) plural times, while changing a focal position and an irradiation position of the electron beam, to generate thinned images of the pattern (160); calculating a plurality of sharpness levels of the respective thinned images; and determining an optimum focal position based on the sharpness levels.

A multiple-electron-beam irradiation apparatus includes a first electrostatic lens, configured using the substrate used as a bias electrode by being applied with a negative potential, a control electrode to which a control potential is applied and a ground electrode to which a ground potential is applied, configured to provide dynamic focusing of the multiple electron beams onto the substrate, in accordance with change of the height position of the surface of the substrate, by generating an electrostatic field, wherein the control electrode is disposed on an upstream side of a maximum magnetic field of the lens magnetic field of the first electromagnetic lens with respect to a direction of a trajectory central axis of the multiple electron beams, and a ground electrode is disposed on an upstream side of the control electrode with respect to the direction of the trajectory central axis.

A scanning electron microscopy system is disclosed. The system includes a multi-beam scanning electron microscopy (SEM) sub-system. The SEM sub-system includes a multi-beam electron source configured to form a plurality of electron beams, a sample stage configured to secure a sample, an electron-optical assembly to direct the electron beams onto a portion of the sample, and a detector assembly configured to simultaneously acquire multiple images of the surface of the sample. The system includes a controller configured to receive the images from the detector assembly, identify a best focus image of images by analyzing one or more image quality parameters of the images, and direct the multi-lens array to adjust a focus of one or more electron beams based on a focus of an electron beam corresponding with the identified best focus image.

An inspection device includes a charged particle optical system that includes a charged particle beam source emitting a charged particle beam and plural lenses focusing the charged particle beam on a sample, a detector that detects secondary charged particles emitted by an interaction of the charged particle beam and the sample, and a calculation unit that executes auto-focusing at a time a field of view of the charged particle optical system moves over plural inspection spots, the calculation unit irradiates the charged particle beam to the sample under an optical condition that is obtained by introducing astigmatism of a predetermined specification to an optical condition that is for observing a pattern by the charged particle optical system, and executes the auto-focusing using an image formed from a signal outputted by the detector in detecting the secondary charged particles.

An object of the present disclosure is to propose a height measuring device which performs height measurement with high accuracy at each height with a relatively simple configuration even when the sample surface height changes greatly. A height measuring device which includes a projection optical system configured to project a light ray onto an object to be measured and a detection optical system including a detection element configured to detect a reflected light ray from the object to be measured, where the projection optical system includes a light splitting element (103) which splits a trajectory of the light ray with which the object to be measured is irradiated into a plurality of parts, and thus it is possible to project a light ray to a predetermined position even when the object to be measured is located at a plurality of heights, is proposed.

An optical height detection system in a charged particle beam inspection system. The optical height detection system includes a projection unit including a modulated illumination source, a projection grating mask including a projection grating pattern, and a projection optical unit for projecting the projection grating pattern to a sample; and a detection unit including a first detection grating mask including a first detection grating pattern, a second detection grating mask including a second detection grating pattern, and a detection optical system for forming a first grating image from the projection grating pattern onto the first detection grating mask and forming a second grating image from the projection grating pattern onto the second detection grating masks. The first and second detection grating patterns at least partially overlap the first and second grating images, respectively.

In a scanning transmission electron microscope, a control unit performs: processing of calculating a first auto-correlation function that is an auto-correlation function of a first scanning transmission electron microscope image; processing of acquiring a first intensity profile along a straight line that passes through a center of the first auto-correlation function; processing of obtaining a position of an inflection point that is closest to the center of the first auto-correlation function in the first intensity profile and adopting an intensity at the position as a first reference intensity; processing of obtaining an aberration coefficient by fitting a first aberration function to an isointensity line that connects positions where intensity is equal to the first reference intensity in the first auto-correlation function and by fitting a second aberration function to an isointensity line that connects positions where intensity is equal to a second reference intensity in a second auto-correlation function; and processing of controlling an electron optical system based on the aberration coefficient.