An improved method and apparatus for enhancing an inspection image in a charged-particle beam inspection system. An improved method for enhancing an inspection image comprises acquiring a first image and a second image of multiple stacked layers of a sample that are taken with a first focal point and a second focal point, respectively, associating a first segment of the first image with a first layer among the multiple stacked layers and associating a second segment of the second image with a second layer among the multiple stacked layers, updating the first segment based on a first reference image corresponding to the first layer and updating the second segment based on a second reference image corresponding to the second layer, and combining the updated first segment and the updated second segment to generate a combined image including the first layer and the second layer.

A scanning electron microscopy system that includes a primary electron beam radiation unit configured to irradiate a first pattern of a substrate having a second pattern formed in a peripheral region of the first pattern, a detection unit configured to detect back scattered electrons emitted from the substrate, an image generation unit configured to generate an electron beam image corresponding to a strength of the back scattered electrons, a designating unit configured to designate a depth measurement region in which the first pattern exists on the electron beam image, and a processing unit configured to obtain an image signal of the depth measurement region and a pattern density in the peripheral region where the second pattern exists, and to estimate a depth of the first pattern based on the obtained image signal of the depth measurement region and the pattern density in the peripheral region.

An alignment system that realizes high reproducibility of position information during re-observation and in which a user can efficiently and easily re-observe an area of interest is provided. An alignment system that enables correlative observation between the imaging device 104 and the charged particle beam device 100, in which a plurality of positional alignment points are set on a sample carrier in a state where a sample is placed on the sample carrier, the alignment controller 153 obtains a transformation matrix that transforms a coordinate system of the imaging device and a coordinate system of the charged particle beam device based on position information and magnification of each of the plurality of positional alignment points when a first image is imaged by an imaging device and position information and magnification of each of a plurality of positional alignment points when observing by a charged particle beam device, and transforms a field of view designated for the first image into field-of-view information of the charged particle beam device by using the transformation matrix.

Wafer-to-wafer and within-wafer image contrast variations can be identified and mitigated by extracting an image frame during recipe setup and then during runtime at the same location. Image contrast is determined for the two image frames. A ratio of the contrast for the two image frames can be used to determine contrast variations and focus variation.

Disclosed herein is an electron-optical assembly testing system for testing an electron-optical assembly, the system comprising: a source of charged particles configured to emit a beam of charged particles; an electron-optical assembly holder configured to hold an electron-optical assembly to be tested such that, when the system is in use with an electron-optical assembly held by the electron-optical assembly holder, the electron-optical assembly is illuminated by the beam; and a sub-beam detector for detecting sub-beams of charged particles that have been transmitted through the electron-optical assembly.

A system and method for generating predictive images for wafer inspection using machine learning are provided. Some embodiments of the system and method include acquiring the wafer after a photoresist applied to the wafer has been developed; imaging a portion of a segment of the developed wafer; acquiring the wafer after the wafer has been etched; imaging the segment of the etched wafer; training a machine learning model using the imaged portion of the developed wafer and the imaged segment of the etched wafer; and applying the trained machine learning model using the imaged segment of the etched wafer to generate predictive images of a developed wafer. Some embodiments include imaging a segment of the developed wafer; imaging a portion of the segment of the etched wafer; training a machine learning model; and applying the trained machine learning model to generate predictive after-etch images of the developed wafer.

A detection and correction method for an electron beam system are provided. The method includes emitting an electron beam towards a specimen; modulating a beam current of the electron beam to obtain a beam signal. The method further includes detecting, using an electron detector, secondary and/or backscattered electrons emitted by the specimen to obtain electron data, wherein the electron data defines a detection signal. The method further includes determining, using a processor, a phase shift between the beam signal and the detection signal. The method further includes filtering, using the processor, the detection signal based on the phase shift.

Beam intercept profiles are measured as a particle beam transversely scans across a probe. A current of beam particles, a detector intensity, or image pixel intensities can variously be measured to obtain the profiles. Multiple profiles are used to determine geometric parameters which in turn can be used to configure equipment. In one application, transverse beam intercept profiles are measured for different waist heights of the particle beam. Steepness of the several profiles can be used to determine a height of the probe as the height at which the profile is steepest. The known probe height enables placing the probe in contact with a substrate at another known height. In another application, transverse beam intercept profiles of orthogonal probe edges are used to position a beam waist, reduce spot size, or reduce astigmatism. Techniques are applicable to SEM, FIB, and nanoprobe systems. Methods and apparatus are disclosed, with variations.

The invention relates to a method for electron microscopy. The method comprises providing an electron microscope, generating an electron beam and an image beam, adjusting one of the beam and of the beam and the image beam to reduce off-axial aberrations and correcting a diffraction pattern of the resulting modified beam. The invention also relates to a method for reducing throughput time in a sample image acquisition session in transmission electron microscopy. The method comprises providing an electron microscope, generating a beam and an image beam, adjusting one of the two to reduce off-axial aberrations and filtering the resulting modified image beam. The invention further relates to an electron microscope and to a non-transient computer-readable medium with a computer program for carrying out the methods.

A method of operating a particle beam device for imaging, analyzing and/or processing an object may be carried out, for example, by a particle beam device. The method may include: identifying at least one region of interest on the object; defining: (i) an analyzing sequence for analyzing the object, (ii) a processing sequence for processing the object by deformation and (iii) an adapting sequence for adapting the at least one region of interest depending on the processing sequence and/or on the analyzing sequence; processing the object by deformation according to the processing sequence and/or analyzing the object according to the analyzing sequence; adapting the at least one region of interest according to the adapting sequence; and after or while adapting the at least one region of interest, imaging and/or analyzing the at least one region of interest using a primary particle beam being generated by a particle beam generator.